Infineon Technologies IPDD60R105CFD7XTMA1

Overview

IPDD60R105CFD7XTMA1 from Infineon Technologies is a 600 V, 105 mΩ ultra-fast body diode superjunction MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 36 nC gate charge, 0.41 µC typical reverse recovery charge (Qrr), 1300 A/µs diF/dt ruggedness, and supports 66 A pulsed drain current - enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPDD60R105CFD7XTMA1 datasheet, IPDD60R105CFD7XTMA1 pinout, IPDD60R105CFD7XTMA1 application, or IPDD60R105CFD7XTMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, JEDEC-qualified industrial reliability, source-sense pin configuration for accurate gate drive, and validated hard commutation robustness in ZVS operation.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast body diode and sense-source (S) / source (S') pin separation to enable precise gate control and minimize parasitic oscillation during high-diF/dt switching. Its reduced Q_g and best-in-class Q_rr directly lower turn-off losses and EMI in resonant converters operating above 100 kHz.

The PG-HDSOP-10 package features an exposed drain tab (pins 6–10 + tab) for low thermal resistance (R_thJC = 0.63 °C/W), while dedicated Driver Source (pin 2) and Power Source (pins 3–5) terminals decouple high-current return paths - critical for stable gate drive in paralleled configurations and high dv/dt environments.

Key Specifications

Pinout & Package

PG-HDSOP-10 package with exposed drain tab (pins 6–10 + tab) for low-inductance, high-current drain connection and enhanced thermal dissipation. Pin 1 is Gate; pins 3–5 are Power Source; pin 2 is Driver Source; pins 6–10 and tab are Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPDD60R099CFD7 and IPW60R099P7, IPDD60R105CFD7XTMA1 offers the optimal balance of low Q_g, validated diF/dt ruggedness, and compact surface-mount packaging - making it preferred for space-constrained, high-reliability resonant converters where gate drive simplicity and thermal performance are prioritized over marginal R_DS(on) reduction.

Availability

IPDD60R105CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-volume production readiness.

Supply support for IPDD60R105CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CFD7 product line - engineered specifically for high-efficiency soft-switching power conversion in datacenter, telecom, and electric vehicle infrastructure, emphasizing low-loss operation and ruggedness in resonant topologies.

FAQ

What is the purpose of the separate Driver Source (pin 2) and Power Source (pins 3–5) pins?

The Driver Source pin provides a dedicated low-noise reference for the gate driver IC, isolating the gate control loop from high di/dt power return currents flowing through the Power Source pins. This prevents gate voltage distortion and ensures stable switching behavior, especially critical in high-frequency ZVS and LLC converters where gate timing precision directly impacts efficiency and EMI.

Can IPDD60R105CFD7XTMA1 be used in hard-switched topologies like traditional flyback or forward converters?

Yes, but with design constraints: its ultra-low Qrr and fast body diode are not required in hard-switched applications, and its optimized R_DS(on)×Q_g FOM may offer less advantage versus cost-optimized alternatives. Thermal design must account for higher switching losses, and gate drive must accommodate its 36 nC Q_g and 5.7 V plateau voltage to ensure clean turn-on/turn-off.

Is the exposed drain tab electrically isolated from the PCB mounting plane?

No - the drain tab is electrically connected to pins 6–10 and must be soldered to a PCB copper pour tied to the high-voltage drain net. It is not insulated; therefore, the underlying PCB layer must maintain appropriate creepage/clearance distances to other potentials, and no conductive heatsink interface material should bridge to secondary-side ground unless rated for 600 V isolation.

How does the CFD7 generation improve upon CFD2 in resonant applications?

CFD7 reduces Q_g by ~15% and Q_rr by ~30% versus CFD2, while increasing diF/dt ruggedness to 1300 A/µs. These improvements directly lower total switching loss, reduce voltage overshoot during turn-off, and enhance reliability under high-stress commutation - enabling higher switching frequencies and smaller magnetics in LLC and phase-shift full-bridge designs without sacrificing robustness.