Infineon Technologies IPDD60R150G7XTMA1

Overview

IPDD60R150G7XTMA1 from Infineon Technologies is a 600 V, 150 mΩ silicon carbide–free Superjunction MOSFET in PG-HDSOP-10 package with Kelvin Source configuration, optimized for high-efficiency PFC and LLC topologies up to 3 kW in server, telecom, and solar power supplies. It features 23 nC total gate charge, 700 A/µs body diode di/dt, and 1.32 °C/W junction-to-case thermal resistance.

For engineers reviewing the IPDD60R150G7XTMA1 datasheet, IPDD60R150G7XTMA1 pinout, IPDD60R150G7XTMA1 application, or IPDD60R150G7XTMA1 equivalent, key selection criteria include R_DS(on)×Q_g figure-of-merit, low source inductance (<3 nH), MSL1-compliant SMD thermal performance, and hard/soft-switching capability in high-current industrial SMPS designs.

Technical Context

This CoolMOS™ G7 device uses charge-compensation superjunction architecture with integrated Kelvin Source (pins 3–5) to decouple power and sensing paths, reducing gate loop inductance and enabling stable high-dV/dt switching (120 V/ns). Its 400 V E_oss of 2.74 µJ and C_iss/C_oss ratio of ~47:1 support fast, low-loss turn-on and reduced voltage overshoot during ZVS transitions.

The PG-HDSOP-10 package integrates drain-connected tab (pins 6–10 + tab), gate (pin 1), and dual-source terminals (power source pins 3–5, driver source pin 2), enabling PCB-level current separation and minimizing parasitic source inductance to ~3 nH - critical for minimizing ringing in >100 kHz PFC stages.

Key Specifications

Pinout & Package

IPDD60R150G7XTMA1 uses the PG-HDSOP-10 surface-mount package with exposed drain tab for thermal and electrical connection. The package includes a dedicated Kelvin Source configuration to separate high-current power return (pins 3–5) from low-noise driver return (pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099C7 and IPP60R180C7, IPDD60R150G7XTMA1 uniquely combines SMD manufacturability, Kelvin Source noise immunity, and 1.32 °C/W R_thJC - making it optimal for compact, high-reliability 2–3 kW industrial SMPS where gate loop stability and thermal headroom are critical.

Availability

IPDD60R150G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar inverters, and industrial UPS systems requiring stable component supply, JEDEC-qualified industrial reliability, and MSL1-compliant SMD assembly.

Supply support for IPDD60R150G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ G7 Superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and renewable energy systems where thermal performance and switching fidelity are design-critical.

FAQ

What is the maximum continuous drain current for IPDD60R150G7XTMA1 at 100°C case temperature?

The maximum continuous drain current is 10 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limits under real-world PCB cooling conditions and ensures safe operation within the 150°C maximum junction temperature rating.

Does IPDD60R150G7XTMA1 require external gate resistors for stable operation in PFC circuits?

Yes - a gate resistor of 10 Ω is used in the datasheet's switching time test circuit (Table 9), and application notes recommend 5–15 Ω depending on gate driver strength and layout. Lower values improve switching speed but increase risk of ringing; higher values dampen oscillation but raise switching losses.

Can IPDD60R150G7XTMA1 be paralleled with identical units without additional components?

No - the datasheet explicitly recommends using ferrite beads on each gate or separate totem-pole drivers when paralleling. This mitigates dynamic current imbalance caused by trace inductance mismatches and ensures equal current sharing under hard-switching conditions.

Is the internal body diode suitable for synchronous rectification in LLC converters?

It is qualified for freewheeling and commutation (700 A/µs di/dt, 245 ns t_rr), but not optimized for synchronous rectification. For SR applications, Infineon recommends dedicated low-V_F Si or GaN devices - this MOSFET's body diode serves primarily for safe turn-off and fault recovery.