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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R170CFD7XTMA1

Name: IPDD60R170CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R170CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDD60R170CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R170CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 19A HDSOP-10

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Product details

Overview

IPDD60R170CFD7XTMA1 from Infineon Technologies is a 600 V, 170 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 23 nC typical gate charge, 0.33–0.66 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency server power supplies and EV charging systems.

For engineers reviewing the IPDD60R170CFD7XTMA1 datasheet, IPDD60R170CFD7XTMA1 pinout, IPDD60R170CFD7XTMA1 application, or IPDD60R170CFD7XTMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, hard commutation robustness, and validated JEDEC industrial qualification - critical for ZVS design-in and thermal reliability in high-density SMPS.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with integrated fast-recovery body diode, engineered specifically for zero-voltage switching operation. Its reduced Q_g (23 nC) and best-in-class Q_rr (0.33–0.66 µC) minimize switching losses and dv/dt stress during turn-off in resonant half/full-bridge stages.

The device features asymmetric source pinning: Pin 2 is Driver Source (not interchangeable with Pins 3–5, Power Source), and the tab plus Pins 6–10 are Drain-connected. This layout supports precise gate loop control and paralleling with external gate resistors placed at Driver Source to suppress oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/server PSUs.
R_DS(on),max	170 mΩ at T_j = 25 °C - enables low conduction loss in 19 A continuous drain applications with minimal heatsink requirement.
Q_g,typ	23 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency LLC controllers.
Q_rr	0.33–0.66 µC - minimizes reverse recovery energy loss and EMI generation during hard commutation in ZVS transitions.
diF/dt	1300 A/µs - ensures reliable operation under fast current reversal without parasitic turn-on in synchronous rectifier or bidirectional DC/DC stages.
E_oss@400V	2.6 µJ - lowers capacitive turn-on loss and improves light-load efficiency in resonant topologies.
T_j,max	150 °C - rated for sustained operation in sealed industrial enclosures without forced airflow.

Pinout & Package

Package: PG-HDSOP-10-1 - surface-mount, thermally enhanced 10-pin package with exposed drain tab for direct PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Primary gate input; requires low-inductance routing and RC snubber for dV/dt immunity.
Pins 3–5	Power Source	High-current source connection for main power path; not interchangeable with Pin 2.
Pin 2	Driver Source	Dedicated Kelvin source for gate driver feedback loop - essential for accurate threshold control and noise immunity.
Pins 6–10 + Tab	Drain	Common high-side drain node; tab must be soldered to large copper pour for thermal management and low-inductance return path.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 88–132 ns and Qrr = 0.33–0.66 µC - eliminates need for external SiC Schottky catch diodes in LLC primary-side synchronous rectification.
Low R_DS(on) × Q_g FOM	170 mΩ × 23 nC = 3.91 Ω·nC - achieves highest efficiency-to-size ratio among 600 V SMD MOSFETs for 1–3 kW resonant converters.
dv/dt ruggedness	120 V/ns (MOSFET) / 70 V/ns (diode) - prevents false turn-on in high-dV/dt bridge-leg environments without additional gate clamping.
JEDEC industrial qualification	Qualified per JESD47 and AEC-Q101 stress tests - supports 10+ year field life in telecom rectifiers and EV charging modules.

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 1.5 kW phase-shift full-bridge (ZVS) DC/DC converter for AI server rack power distribution.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 200–500 kHz with controlled zero-voltage turn-on.

Use Value: 23 nC Q_g and 2.6 µJ E_oss reduce total switching loss by ≥18 % vs. CFD2 generation, enabling 96.5 % peak efficiency at 50 % load.

Use Scenario: Main switching device in 3 kW telecom -48 V rectifier with dual LLC topology and digital control.

IC Role / Device Role / Timing Role: Resonant half-bridge leg switch handling 42 A pulsed drain current with soft-commutated turn-off.

Use Value: 1300 A/µs diF/dt rating ensures stable operation during rapid current reversal in burst-mode light-load regulation.

EV Onboard Charger

Industrial UPS

Use Scenario: AC/DC PFC + isolated DC/DC stage in 11 kW bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET with integrated fast body diode for reverse energy transfer.

Use Value: Ultra-low Qrr (0.33 µC typ.) cuts reverse recovery loss by 40 % compared to standard SJ MOSFETs, improving bidirectional efficiency symmetry.

Use Scenario: High-efficiency 5 kVA online UPS inverter stage operating in soft-switched mode with variable frequency control.

IC Role / Device Role / Timing Role: Bridge-leg switch supporting 150 °C junction temperature under continuous overload conditions.

Use Value: 150 °C T_j,max and 0.91 °C/W R_thJC allow derating-free operation at 95 % load in fanless industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDD60R180CFD7	R_DS(on),max = 180 mΩ; Q_g = 21 nC; same package and diF/dt rating	Slightly higher conduction loss but improved gate drive efficiency due to lower Q_g	Select when optimizing for gate drive power over conduction loss in <1 kW designs.
IPW60R099CFD7	R_DS(on),max = 99 mΩ; Q_g = 42 nC; TO-247-4 package	Lower R_DS(on) enables higher current density but requires through-hole mounting and larger gate driver	Choose for >3 kW systems where thermal headroom and peak current (>35 A) dominate over board space constraints.

Compared with IPDD60R180CFD7 and IPW60R099CFD7, IPDD60R170CFD7XTMA1 balances conduction and switching loss in compact SMD form factor - optimal for 1–2 kW ZVS converters where PCB area, thermal resistance, and diF/dt ruggedness are co-critical.

Availability

IPDD60R170CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-volume SMD manufacturability.

Supply support for IPDD60R170CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the CoolMOS™ CFD7 product line - engineered specifically for soft-switching resonant topologies like LLC and phase-shift full-bridge, targeting high-efficiency, high-power-density AC/DC and DC/DC conversion in datacenter and EV infrastructure.

FAQ

What is the purpose of the separate Driver Source (Pin 2) versus Power Source (Pins 3–5)?

The Driver Source (Pin 2) provides a Kelvin connection for gate driver feedback, isolating gate loop impedance from high-current source paths. This prevents voltage drop-induced threshold shift during fast switching. Power Source (Pins 3–5) carries main load current and must not be substituted for Pin 2 - interchange causes instability and potential device failure per datasheet warning.

Can IPDD60R170CFD7XTMA1 be paralleled with identical units?

Yes, but only with strict layout rules: gate resistors must be placed at the Driver Source (Pin 2), not the Gate (Pin 1), to equalize gate loop inductance. Thermal coupling via shared copper pour and matched trace lengths is mandatory. The device's 1300 A/µs diF/dt rating supports robust paralleling in high-current LLC phases without current imbalance.

How does its body diode performance compare to standard 600 V SJ MOSFETs?

Its body diode achieves trr = 88–132 ns and Qrr = 0.33–0.66 µC - up to 65 % lower Qrr than prior CFD2 devices and ~50 % lower than generic 600 V SJ MOSFETs. This directly reduces reverse recovery loss and EMI, eliminating need for external diodes in ZVS designs while maintaining 70 V/ns diode dv/dt ruggedness.

Is this device suitable for hard-switched PFC applications?

No - it is optimized for soft-switching topologies. Its ultra-low Qrr and fast diode are beneficial in hard commutation, but its R_DS(on) × Q_g trade-off favors ZVS over hard-switched PFC. For boost PFC, Infineon recommends CFD7 variants with higher R_DS(on) (e.g., IPDD60R280CFD7) to prioritize Q_g reduction over conduction loss.

IPDD60R170CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 170mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1016 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 137W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R170CFD7XTMA1 FAQ

1.How can I place an order for IPDD60R170CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R170CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R170CFD7XTMA1 reliable?

The price and inventory of IPDD60R170CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R170CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R170CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R170CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R170CFD7XTMA1?

IPDD60R170CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R170CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R170CFD7XTMA1?

For technical support, including IPDD60R170CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R170CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R170CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R170CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R170CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R170CFD7XTMA1?

All IPDD60R170CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R170CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R170CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R170CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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