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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R190G7XTMA1

Name: IPDD60R190G7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R190G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDD60R190G7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R190G7XTMA1.pdf

Description:: MOSFET N-CH 600V 13A HDSOP-10

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Product details

Overview

IPDD60R190G7XTMA1 from Infineon Technologies is a 600 V, 190 mΩ silicon carbide–compatible CoolMOS™ G7 superjunction MOSFET in PG-HDSOP-10 package with Kelvin Source configuration, rated for 19 A continuous drain current at T_j < 150°C and optimized for high-efficiency PFC and LLC topologies up to 3 kW in server and telecom power supplies.

For engineers reviewing the IPDD60R190G7XTMA1 datasheet, IPDD60R190G7XTMA1 pinout, IPDD60R190G7XTMA1 application, or IPDD60R190G7XTMA1 equivalent, this device delivers verified 18 nC gate charge, 2.17 µJ E_oss at 400 V, 680 A/µs body diode di/dt, and 1.65 °C/W R_thJC - critical for hard-switched PFC design, thermal-limited SMD layouts, and paralleling configurations requiring low source inductance.

Technical Context

This MOSFET implements Infineon's C7 GOLD superjunction technology with integrated 4-pin Kelvin Source (pins 3–5 as Driver Source, pin 2 as Power Source), enabling precise gate control and reducing effective source inductance to ~3 nH - directly improving switching speed and minimizing voltage ringing during turn-on/turn-off transitions.

Its 600 V V_(BR)DSS, 190 mΩ R_DS(on) max at 150°C, and 36 A pulsed drain current support operation in continuous conduction mode (CCM) PFC and resonant LLC half-bridge stages where high dv/dt ruggedness (120 V/ns) and fast reverse recovery (235 ns trr) are required for stable high-frequency operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with 50 V margin for transient overvoltage in telecom/server PFC stages
R_DS(on) max	190 mΩ at T_j = 150°C - enables compact 3 kW PFC with <1.5 W conduction loss at 19 A
Q_g typ	18 nC - reduces gate drive power requirement and allows use of lower-cost 1-A peak drivers
E_oss @ 400 V	2.17 µJ - lowers turn-off energy loss and improves efficiency in 100–300 kHz PFC operation
Body diode di/dt	680 A/µs - sustains fast commutation in synchronous rectification and ZVS transitions without snap-off
R_thJC	1.65 °C/W - enables >70 W power dissipation with moderate heatsinking in SMD layout
Package	PG-HDSOP-10 - MSL1-compliant, lead-free, with isolated Kelvin Source pins for stable high-current switching

Pinout & Package

PG-HDSOP-10 is a surface-mount, thermally enhanced package featuring an exposed drain tab (pins 6–10 + tab) and dedicated Kelvin Source terminals (pins 3, 4, 5) to minimize source loop inductance. Pin 1 is Gate, pin 2 is Power Source, and the tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; referenced to Power Source (pin 2); requires clean, low-inductance routing
Pins 3, 4, 5	Driver Source (Kelvin)	Provides dedicated low-inductance return path for gate driver feedback - decouples power and signal source loops
Pin 2	Power Source	Carries high-current source return for main power path; separate from Kelvin Source to avoid noise coupling
Pins 6–10 + Tab	Drain	High-voltage drain connection; tab provides primary thermal path to PCB copper; electrically common across all five terminals

Key Features

Feature	Design Value
C7 GOLD superjunction cell structure	Delivers best-in-class R_DS(on) × Q_g FOM - 15% improvement over prior C7 generation, enabling higher frequency operation without efficiency penalty
Integrated 4-pin Kelvin Source	Reduces source inductance to ~3 nH - suppresses gate oscillation and improves switching consistency in paralleled configurations
DDPAK-based PG-HDSOP-10 footprint	115 mm² area with MSL1 reflow compatibility - supports automated assembly and achieves R_thJA = 35–45 °C/W on 6 cm² copper
Enhanced body diode performance	235 ns t_rr, 2 µC Q_rr, and 680 A/µs di/dt - enables reliable zero-voltage switching in LLC and reduces snubber losses in PFC

Applications

Server PSU PFC Stage

Telecom Rectifier LLC

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 2–3 kW rack-mounted server power supply operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Main switching device in high-side boost switch position; handles full AC line rectified current with minimal conduction and switching loss.

Use Value: 190 mΩ R_DS(on) and 2.17 µJ E_oss reduce total losses by ≥0.8% vs. prior-gen 600 V MOSFETs, directly improving 80 PLUS Titanium efficiency compliance.

Use Scenario: Primary-side switch in asymmetric half-bridge LLC resonant converter for 48 V telecom rectifier delivering 1.5 kW output.

IC Role / Device Role / Timing Role: High-frequency hard-switched switch operating at 250–350 kHz with ZVS-assisted turn-on enabled by fast body diode recovery.

Use Value: 680 A/µs di/dt and 235 ns t_rr ensure robust ZVS across load range, eliminating external snubbers and reducing system BOM cost.

Solar String Inverter DC-DC

Industrial UPS Half-Bridge

Use Scenario: Isolated DC-DC stage in string-level solar inverter converting 800–1000 V DC input to 400 V intermediate bus.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; subjected to high dv/dt stress during dead-time transitions.

Use Value: 120 V/ns dv/dt ruggedness and 650 V V_DS rating provide margin against voltage spikes in ungrounded PV systems with long cable runs.

Use Scenario: Output half-bridge in online double-conversion UPS handling 3 kVA load with battery backup and strict THD requirements.

IC Role / Device Role / Timing Role: Fast-switching PWM device in high-efficiency inverter stage operating at 16–20 kHz with active harmonic cancellation.

Use Value: Low 1.65 °C/W R_thJC and Kelvin Source enable stable 19 A continuous operation without forced air cooling - reducing system fan noise and maintenance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	600 V, 99 mΩ R_DS(on), same G7 process but D2PAK-7L package; no Kelvin Source; higher R_thJC (2.1 °C/W)	Requires larger PCB footprint and external Kelvin sensing for high-current PFC; better suited for single-device 2 kW designs	Select when lowest R_DS(on) is prioritized over SMD assembly and thermal density
IPP60R190C7	600 V, 190 mΩ R_DS(on), TO-220FP package; no Kelvin Source; R_thJC = 1.8 °C/W; higher parasitic inductance	Limited to lower-power (<1.5 kW) or through-hole production; unsuitable for high-density SMD PFC modules	Select only for legacy through-hole designs or prototyping where thermal margin exceeds 10 W

Compared with IPW60R099C7 and IPP60R190C7, IPDD60R190G7XTMA1 uniquely combines Kelvin Source, MSL1 SMD packaging, and 1.65 °C/W thermal resistance - making it the only option qualified for automated, high-power-density 3 kW PFC modules requiring both reliability and manufacturability.

Availability

IPDD60R190G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC converters, and industrial UPS systems requiring stable component supply, JEDEC-qualified industrial-grade reliability, and long-term production continuity.

Supply support for IPDD60R190G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ G7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and renewable energy systems where thermal density and switching fidelity are critical.

FAQ

What is the maximum continuous drain current rating for IPDD60R190G7XTMA1?

The maximum continuous drain current is 19 A at case temperature T_C ≤ 100°C and junction temperature T_j < 150°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating assumes proper PCB copper area (6 cm² drain pad) and natural convection cooling per JEDEC JESD51-2 conditions.

Does IPDD60R190G7XTMA1 require external gate resistors for stability?

Yes - a gate resistor between 5 Ω and 15 Ω is recommended to dampen potential oscillation due to interaction between gate driver output impedance and the MOSFET's 0.9 Ω intrinsic gate resistance. The Kelvin Source configuration reduces sensitivity, but empirical tuning is still required for each board layout.

Can IPDD60R190G7XTMA1 be paralleled with identical units?

Yes, but with specific layout and drive requirements: ferrite beads on individual gate lines and separate totem-pole drivers per device are strongly recommended to balance dynamic current sharing. The Kelvin Source minimizes static imbalance, but layout symmetry remains critical for <5% current mismatch at full load.

Is the PG-HDSOP-10 package lead-free and RoHS compliant?

Yes - the PG-HDSOP-10 package is fully Pb-free and RoHS compliant, with MSL1 moisture sensitivity level and reflow profile compatible with standard SnAgCu solder paste (peak 260°C). The die attach uses lead-free sintered silver, contributing to its improved R_thJC of 1.65 °C/W.

IPDD60R190G7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ G7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 210µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 718 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 76W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R190G7XTMA1 FAQ

1.How can I place an order for IPDD60R190G7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R190G7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R190G7XTMA1 reliable?

The price and inventory of IPDD60R190G7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R190G7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R190G7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R190G7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R190G7XTMA1?

IPDD60R190G7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R190G7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R190G7XTMA1?

For technical support, including IPDD60R190G7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R190G7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R190G7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R190G7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R190G7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R190G7XTMA1?

All IPDD60R190G7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R190G7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R190G7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R190G7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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