Infineon Technologies IPDH4N03LAG
- Part No.:
- IPDH4N03LAG
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPDH4N03LAG.pdf
- Description:
- MOSFET N-CH 25V 90A TO252-3
- Quantity:
- Payment:

- Shipping:

Inventory:2,390
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Product details
Overview
IPDH4N03LAG from Infineon Technologies is a 25 V, logic-level N-channel OptiMOS®2 power MOSFET in PG-TO252-3-11 package, rated for 90 A continuous drain current at TC = 25 °C and featuring 4.2 mΩ max RDS(on) at VGS = 10 V. It delivers high-frequency switching performance in synchronous buck converters with 19–26 nC total gate charge and supports 175 °C junction operation.
For engineers reviewing the IPDH4N03LAG datasheet, IPDH4N03LAG pinout, IPDH4N03LAG application, or IPDH4N03LAG equivalent, key selection criteria include its low gate charge × RDS(on) figure of merit (FOM), robust 150 mJ single-pulse avalanche energy, and JEDEC-qualified reliability for industrial dc/dc converter designs requiring stable thermal resistance (RthJC = 1.6 K/W).
Technical Context
This device operates as a high-efficiency primary-side or synchronous rectifier switch in non-isolated point-of-load converters. Its logic-level gate threshold (1.2–2.0 V typ) enables direct drive from 3.3 V/5 V controllers, while low Crss (110–160 pF) and fast switching times (tr = 7–11 ns, tf = 4.6–7 ns) minimize switching losses at frequencies up to 1 MHz.
The integrated body diode exhibits 0.93–1.2 V forward voltage at 78 A and 25 °C, with 15 nC reverse recovery charge under 400 A/µs di/dt - enabling efficient hard-switched and synchronous rectification topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V logic-level gate drive. |
| RDS(on) max | 4.2 mΩ at VGS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-current POL converters. |
| ID cont. | 90 A at TC = 25 °C - Supports high-power density designs with minimal parallel devices. |
| Qg total | 19–26 nC - Low gate drive power requirement, reducing controller loading and enabling higher PWM frequency operation. |
| EAS | 150 mJ (ID = 90 A) - Robust avalanche capability eliminates need for external clamping in inductive load switching. |
| RthJC | 1.6 K/W - Enables direct heatsink mounting for thermal management in compact industrial power modules. |
| VGS(th) | 1.2–2.0 V - Ensures reliable turn-on with standard microcontroller GPIO or low-voltage PWM drivers. |
Pinout & Package
IPDH4N03LAG uses the PG-TO252-3-11 surface-mount package (DPAK variant), with exposed drain pad for thermal and electrical connection to PCB copper area. The three terminals are arranged in standard DPAK configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives logic-level gate drive signal; low input capacitance (Ciss = 2400–3200 pF) minimizes driver stress. |
| Pin 2 (Drain) | High-side power terminal | Exposed metal tab - must be soldered to ≥6 cm² copper pour for thermal performance and current conduction. |
| Pin 3 (Source) | Reference node / return path | Provides low-inductance source connection; ties to power ground plane to reduce switching noise coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V control systems. |
| Optimized FOM (Qg × RDS(on)) | ~100–110 nC·mΩ - balances switching and conduction losses for peak efficiency in 300–1000 kHz dc/dc converters. |
| 175 °C maximum junction temperature | Enables operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves. |
| JEDEC-qualified reliability | Qualified per J-STD-20 and JESD22 - validated for reflow, humidity, and temperature cycling in industrial production. |
| Low reverse recovery charge (Qrr) | ≤15 nC - reduces diode-related switching loss and EMI in synchronous rectifier configurations. |
Applications
| Server VRM | Industrial PLC Power Supply |
|---|---|
Use Scenario: 48 V-to-12 V intermediate bus conversion feeding multi-phase CPU core VRMs. IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved synchronous buck stages. Use Value: 4.2 mΩ RDS(on) and 19–26 nC Qg enable >95% efficiency at 50 A/channel with minimal thermal margin. |
Use Scenario: 24 V auxiliary power rail generation inside programmable logic controller backplanes. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback or non-isolated buck converter. Use Value: 0.93–1.2 V VSD and 15 nC Qrr reduce diode conduction loss by >40% vs. discrete Schottky solutions. |
| Telecom DC/DC Module | Motor Drive Half-Bridge |
Use Scenario: Compact 12 V output module for base station radio card power distribution. IC Role / Device Role / Timing Role: Low-side switch in two-phase buck converter with 500 kHz PWM. Use Value: Fast 7–11 ns rise time and low Crss support clean edge integrity and reduced EMI filtering burden. |
Use Scenario: High-side switch in 24 V BLDC motor gate driver stage for HVAC fan control. IC Role / Device Role / Timing Role: Logic-level driven high-side MOSFET in half-bridge with bootstrap gate drive. Use Value: 1.2–2.0 V VGS(th) ensures robust turn-on even with bootstrap droop down to ~4 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 5.2 mΩ @ 4.5 V; Qg = 14.5 nC; TO-252 package; lower VDS (20 V) | Limited to ≤20 V input rails; better suited for ultra-low-voltage POL where gate drive is constrained to 3.3 V only. | Select when VIN ≤ 16 V and gate drive voltage is fixed at 3.3 V - trades voltage rating for slightly lower Qg. |
| STL220N4LF7AG | RDS(on) = 3.8 mΩ @ 10 V; Qg = 32 nC; same PG-TO252-3-11; 40 V VDS | Higher voltage rating enables 24 V input compatibility but increases switching loss due to 67% higher Qg. | Select when system requires 24–36 V input range and can accommodate higher gate drive power and slower switching. |
Compared with IRLHS6342TRPBF and STL220N4LF7AG, IPDH4N03LAG uniquely balances 25 V rating, sub-4.5 mΩ RDS(on), and <26 nC Qg - making it optimal for 12 V input, high-current, high-frequency industrial dc/dc where thermal and switching loss budgets are tightly coupled.
Availability
IPDH4N03LAG is available at Aetrix Electronics and suitable for server VRM, industrial PLC power supply, and telecom DC/DC module applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IPDH4N03LAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to the OptiMOS®2 power transistor family, engineered specifically for high-efficiency, high-frequency dc/dc conversion in space-constrained industrial and communications infrastructure equipment.
FAQ
Is IPDH4N03LAG suitable for synchronous rectification in flyback converters?
Yes - its low 0.93–1.2 V body diode forward voltage at 78 A and 15 nC reverse recovery charge enable efficient synchronous rectification without external diodes. The 175 °C junction rating supports sustained operation under high ambient conditions typical in enclosed flyback designs.
What is the recommended PCB layout for thermal performance?
Mount the exposed drain pad directly to ≥6 cm² of 70 µm thick copper on FR4 (40 mm × 40 mm), using multiple thermal vias to inner ground planes. Maintain ≥0.5 mm clearance between gate trace and high-dV/dt drain nodes to prevent coupling-induced false turn-on.
Does IPDH4N03LAG require a gate resistor for stability?
A 2.7 Ω gate resistor is used in the datasheet's switching characterization (td(off), tf). For most 300–1000 kHz applications, a 1–5 Ω resistor balances EMI suppression and switching speed; values below 1 Ω increase risk of ringing due to low RG (1.3 Ω typ) and Crss interaction.
Can IPDH4N03LAG replace IPSH4N03LAG in existing designs?
Yes - both share identical electrical specs, thermal characteristics, and marking (H4N03LA). The only difference is package: IPDH4N03LAG uses PG-TO252-3-11 (surface-mount DPAK), while IPSH4N03LAG uses PG-TO251-3-11 (SMD SIP). Footprint and thermal design must be verified for the TO252 variant's larger pad area.
IPDH4N03LAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3200 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
IPDH4N03LAG FAQ
1.How can I place an order for IPDH4N03LAG through Aetrix?
Please submit a Request for Quotation (RFQ) for IPDH4N03LAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPDH4N03LAG reliable?
The price and inventory of IPDH4N03LAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDH4N03LAG is usually 5 days.
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IPDH4N03LAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPDH4N03LAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPDH4N03LAG?
For technical support, including IPDH4N03LAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDH4N03LAG requirements.
6.How does Aetrix verify that IPDH4N03LAG is sourced from the original manufacturer or authorized distributors?
All IPDH4N03LAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDH4N03LAG meets industry standards.
7.What is the process for return or replacement of IPDH4N03LAG?
All IPDH4N03LAG units undergo pre-shipment inspection (PSI). If there is an issue with IPDH4N03LAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPDH4N03LAG part is unused and in its original packaging.
Return procedure for IPDH4N03LAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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