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Infineon Technologies IPDH6N03LAG
- Part No.:
- IPDH6N03LAG
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPDH6N03LAG.pdf
- Description:
- MOSFET N-CH 25V 50A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:81
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Product details
Overview
IPDH6N03LAG from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO252-3-11 package, rated for 25 V VDS, 50 A continuous drain current at TC = 25 °C, and 6 mΩ max RDS(on) at VGS = 10 V. It delivers high-frequency switching performance in synchronous buck converters for server VRMs and telecom POL modules.
For engineers reviewing the IPDH6N03LAG datasheet, IPDH6N03LAG pinout, IPDH6N03LAG application, or IPDH6N03LAG equivalent, key selection criteria include its 2.1 K/W junction-to-case thermal resistance, 14–19 nC total gate charge, 175 °C maximum operating temperature, and JEDEC-qualified reliability for industrial DC/DC converter designs.
Technical Context
This MOSFET employs a trench-based silicon process optimized for low gate charge × RDS(on) figure-of-merit (FOM), enabling efficient operation above 500 kHz in hard-switched topologies. Its logic-level gate threshold (1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V drive, eliminating need for gate boosters in low-voltage control stages.
The integrated body diode exhibits low Qrr (≤10 nC) and fast reverse recovery, supporting synchronous rectification without external Schottky replacement. Thermal design leverages the TO252's exposed drain pad for direct PCB copper conduction, achieving 50 K/W junction-to-ambient with 6 cm² cooling area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V/3.3 V output rails |
| RDS(on) max | 6 mΩ @ VGS = 10 V - Enables ≤3 W conduction loss at 50 A, critical for high-current POL stages |
| Qg | 14–19 nC - Low gate drive energy supports >1 MHz switching with minimal driver IC stress |
| RthJC | 2.1 K/W - Allows direct thermal path to heatsink or large copper pour, simplifying thermal management |
| Tj max | 175 °C - Rated for sustained operation in enclosed telecom or industrial enclosures without derating |
| Qrr | ≤10 nC - Reduces turn-on losses in synchronous FETs and minimizes EMI during diode commutation |
| ID cont | 50 A @ TC = 25 °C - Sustains full load in 40–60 A VRM phases when paralleled or used with forced airflow |
Pinout & Package
IPDH6N03LAG uses the PG-TO252-3-11 package: surface-mount, 3-pin, with exposed drain pad on underside for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Logic-level input requiring ≤2.0 V threshold; connects to PWM controller gate driver output |
| Pin 2 (D) | Drain terminal / thermal pad | High-current power node and primary thermal path; must be soldered to ≥6 cm² copper for rated performance |
| Pin 3 (S) | Source terminal | Reference node for gate drive and current sensing; ties to low-side switch source or ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Optimized FOM (Qg × RDS(on)) | ~114 nC·mΩ - Enables high-efficiency, high-frequency operation in compact VRMs |
| JEDEC qualification | Qualified per J-STD-20/JESD22 - Validated for reflow, humidity, and temperature cycling in production environments |
| 175 °C operation | Full-rated performance up to junction temperature - eliminates thermal derating in sealed chassis |
| Low Qrr body diode | ≤10 nC - Reduces shoot-through risk and EMI in synchronous rectifier configurations |
| Pb-free & RoHS | Lead-free plating compliant with EU RoHS Directive 2011/65/EU - suitable for global manufacturing |
Applications
| Server Voltage Regulator Modules | Telecom Point-of-Load Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltages in 1U rack servers. IC Role / Device Role / Timing Role: High-side synchronous FET in 300–600 kHz switching stage, driven by dedicated gate driver IC. Use Value: 6 mΩ RDS(on) and 2.1 K/W RthJC enable <1.5 W conduction loss at 50 A, reducing thermal footprint per phase. | Use Scenario: Isolated or non-isolated POL converters powering baseband processors and FPGAs in 5G radio units. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 1 MHz+ buck converters, leveraging fast body diode recovery. Use Value: ≤10 nC Qrr minimizes reverse recovery loss and allows elimination of external Schottky diodes. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
Use Scenario: Half-bridge gate driver stages supplying isolated gate signals to IGBTs or SiC MOSFETs in servo inverters. IC Role / Device Role / Timing Role: Logic-level level-shifting FET controlling bootstrap capacitor charging path. Use Value: 1.2–2.0 V VGS(th) ensures reliable turn-on with 3.3 V microcontroller GPIO, avoiding external level shifters. | Use Scenario: Compact 5 V/3.3 V power supplies for radar sensors and camera ECUs in ASIL-B systems. IC Role / Device Role / Timing Role: Primary switching FET in 400 kHz buck regulator with extended temperature operation. Use Value: 175 °C rating and JEDEC qualification support uninterrupted operation in under-hood ambient up to 125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB052N03L G | RDS(on) = 5.2 mΩ @ 10 V; TO-263 package; higher Qg (22 nC) | Larger footprint; better conduction loss but slower switching than IPDH6N03LAG | Prefer when thermal mass > switching speed; avoid in >1 MHz designs due to gate charge penalty |
| IRLHS6342TRPBF | RDS(on) = 7.5 mΩ @ 4.5 V; PQFN 3.3×3.3 mm; RthJC = 3.0 K/W | Smaller footprint and lower profile; higher thermal resistance limits power density | Choose for space-constrained layouts where 50 A peak is intermittent, not continuous |
Compared with IPB052N03LG and IRLHS6342TRPBF, IPDH6N03LAG offers the optimal balance of low RDS(on), moderate gate charge, and proven thermal performance in TO252 - making it preferred for high-reliability, high-current, medium-frequency POL applications.
Availability
IPDH6N03LAG is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive gate drivers, and automotive ADAS power supplies requiring stable component supply across long production lifecycles.
Supply support for IPDH6N03LAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global wafer fabs and packaging facilities.
This device belongs to the OptiMOS®2 family - engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure, emphasizing low FOM and robust thermal behavior.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The datasheet specifies 50 A continuous drain current at both TC = 25 °C and TC = 100 °C. This reflects bondwire-limited current handling rather than thermal limitation; actual usable current at elevated case temperatures depends on PCB layout and cooling area, with derating beginning above 100 °C per the safe operating area curve.
Is IPDH6N03LAG suitable for synchronous rectification in a 1 MHz buck converter?
Yes - its 14–19 nC total gate charge, ≤10 nC reverse recovery charge, and fast switching times (tr = 5.4–8 ns, tf = 4.2–6.3 ns) support reliable synchronous rectification at 1 MHz. The low Qrr minimizes turn-on loss and EMI, provided gate drive strength exceeds 2 A peak and layout minimizes parasitic inductance.
Does this MOSFET require a gate resistor for stability in high-speed switching?
A small gate resistor (1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. The device's 1.3 Ω intrinsic gate resistance helps limit dv/dt, but external series resistance improves EMI performance and prevents overshoot when driven by high-slew-rate controllers like the IR352xx or MP296x families.
How does the PG-TO252-3-11 package differ from PG-TO252-3-23 in IPFH6N03LAG?
PG-TO252-3-11 has a standard leadframe configuration with full-width drain tab and standard pin pitch; PG-TO252-3-23 features a modified leadframe with enhanced thermal pad geometry and tighter internal wirebonding - resulting in marginally lower RthJC (2.0 vs. 2.1 K/W) and improved pulse current capability, though both share identical pinout and footprint compatibility.
IPDH6N03LAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2390 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
IPDH6N03LAG FAQ
1.How can I place an order for IPDH6N03LAG through Aetrix?
Please submit a Request for Quotation (RFQ) for IPDH6N03LAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPDH6N03LAG reliable?
The price and inventory of IPDH6N03LAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDH6N03LAG is usually 5 days.
3.What payment methods are accepted for IPDH6N03LAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDH6N03LAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPDH6N03LAG?
IPDH6N03LAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPDH6N03LAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPDH6N03LAG?
For technical support, including IPDH6N03LAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDH6N03LAG requirements.
6.How does Aetrix verify that IPDH6N03LAG is sourced from the original manufacturer or authorized distributors?
All IPDH6N03LAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDH6N03LAG meets industry standards.
7.What is the process for return or replacement of IPDH6N03LAG?
All IPDH6N03LAG units undergo pre-shipment inspection (PSI). If there is an issue with IPDH6N03LAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPDH6N03LAG part is unused and in its original packaging.
Return procedure for IPDH6N03LAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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