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Infineon Technologies IPDQ60R015CFD7XTMA1
- Part No.:
- IPDQ60R015CFD7XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 22-PowerBSOP Module
- Datasheet:
-
IPDQ60R015CFD7XTMA1.pdf
- Description:
- HIGH POWER_NEW
- Quantity:
- Payment:
- Shipping:
Inventory:6,050
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Product details
Overview
IPDQ60R015CFD7XTMA1 from Infineon Technologies is a 600 V, 15 mΩ ultra-low-RDS(on) CoolMOS™ CFD7 superjunction power MOSFET in PG-HDSOP-22 package with integrated fast body diode, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging systems.
For engineers reviewing the IPDQ60R015CFD7XTMA1 datasheet, IPDQ60R015CFD7XTMA1 pinout, IPDQ60R015CFD7XTMA1 application, or IPDQ60R015CFD7XTMA1 equivalent, key selection criteria include its 251 nC gate charge, 1300 A/µs diF/dt ruggedness, 28.8 µJ Eoss at 400 V, 650 V VDS rating, and validated JEDEC industrial qualification.
Technical Context
This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge balancing for reduced Qg and best-in-class Qrr (1.60–3.20 µC), enabling high-efficiency ZVS operation. Its internal fast body diode supports hard commutation up to 1300 A/µs diF/dt without external snubbers.
The device features dedicated Driver Source (Pin 2) and Power Source (Pins 3–11) terminals to minimize source inductance in high-frequency switching, and a thermally enhanced exposed drain tab (Pins 12–22 + Tab) for low RthJC of 0.19 °C/W - critical for high-power density designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V bus designs with 62.5 % voltage margin for transient overvoltage robustness |
| RDS(on) max | 15 mΩ @ Tj = 150 °C - enables <1.5 W conduction loss at 100 A ID, reducing heatsink requirements |
| Qg typ | 251 nC - lowers gate drive power and allows use of smaller, cost-effective drivers in >100 kHz applications |
| Eoss @ 400 V | 28.8 µJ - reduces turn-off switching loss by ~35 % vs. prior CFD2 generation in LLC resonant tanks |
| diF/dt max | 1300 A/µs - sustains reliable body diode commutation under hard-switching stress without oscillation or failure |
| ID,pulse | 495 A - supports peak current handling during startup or overload in multi-kW power supplies |
| RthJC | 0.19 °C/W - enables direct thermal coupling to heatsink via exposed drain tab, critical for >500 W/in³ designs |
Pinout & Package
Package: PG-HDSOP-22 - surface-mount, thermally enhanced 22-pin package with large exposed drain tab (Pins 12–22 + metal tab) for low thermal resistance and high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires low-inductance gate loop layout to suppress ringing during 195 ns td(off) |
| Pins 3–11 | Power Source | Primary source return path for main load current; must be routed with wide copper to minimize IR drop |
| Pin 2 | Driver Source | Dedicated Kelvin source for gate driver feedback; isolates gate loop from power loop to improve dv/dt immunity |
| Pins 12–22 + Tab | Drain | Exposed drain terminal for direct heatsink mounting; carries full output current and dissipates junction heat |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast body diode | trr = 205–308 ns and Qrr = 1.60–3.20 µC - eliminates need for external anti-parallel SiC diodes in ZVS LLC primary switches |
| Low RDS(on) × Qg FOM | 3.77 Ω·nC - highest figure-of-merit among 600 V SMD MOSFETs, enabling >98 % efficiency at 100 kHz+ |
| dv/dt ruggedness | 120 V/ns (MOSFET), 70 V/ns (body diode) - prevents false turn-on in high-dV/dt half-bridge nodes without gate clamping |
| JEDEC industrial qualification | Qualified per JESD47 - ensures reliability across -55 °C to 150 °C operating range for 10+ year field life in telecom infrastructure |
| Source pin separation | Dedicated Driver Source (Pin 2) and Power Source (Pins 3–11) - eliminates source inductance-induced shoot-through risk in high-speed switching |
Applications
| Server PSU Primary Switch | Telecom Rectifier LLC Switch |
|---|---|
|
Use Scenario: High-density 3 kW server power supply operating at 300–500 kHz using asymmetric half-bridge LLC topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch with zero-voltage turn-on and controlled body-diode commutation. Use Value: Enables 98.2 % peak efficiency and 85 W/in³ power density by minimizing Eoss and Qrr-related losses. |
Use Scenario: 48 V telecom rectifier module with dual-phase LLC resonant converter for 5G base station power distribution. IC Role / Device Role / Timing Role: High-side resonant switch managing 400 V DC link with precise ZVS timing and diF/dt-hardened body diode recovery. Use Value: Delivers 97.9 % efficiency at full load and withstands 1300 A/µs reverse recovery stress without derating. |
| EV Onboard Charger (OBC) PFC + LLC | Industrial UPS Inverter Stage |
|
Use Scenario: Bidirectional 11 kW OBC integrating totem-pole PFC and dual LLC DC/DC stages for Level 2 AC charging. IC Role / Device Role / Timing Role: Secondary-side LLC switch handling 400 V–800 V variable bus, leveraging fast body diode for synchronous rectification. Use Value: Reduces conduction loss by 32 % vs. CFD2 and eliminates external freewheeling diodes, cutting BOM count and footprint. |
Use Scenario: 10 kVA industrial uninterruptible power supply with three-phase inverter stage operating at 16 kHz PWM with soft switching. IC Role / Device Role / Timing Role: Low-loss inverter leg switch supporting hard-switched and transition-mode operation with robust dv/dt immunity. Use Value: Achieves <1.2 °C/W total thermal resistance when mounted on forced-air heatsink, enabling fanless operation up to 40 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency 600 V resonant switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW60R017C7 | Same CFD7 platform, 17 mΩ RDS(on), 223 nC Qg, TO-247-4 package | Higher thermal mass but no Driver Source pin; unsuitable for >300 kHz designs requiring Kelvin source isolation | Select when board space permits larger through-hole package and gate drive layout lacks Kelvin routing capability |
| IPP60R020C7 | CFD7 generation, 20 mΩ RDS(on), 182 nC Qg, PG-TO220-3-1 package | No isolated Driver Source; higher RthJA (62 °C/W); limited to <150 kHz due to slower trr (340 ns) | Choose for cost-sensitive industrial SMPS where 97 % efficiency suffices and PCB layout cannot accommodate HDSOP-22 footprint |
Compared with IPW60R017C7 and IPP60R020C7, IPDQ60R015CFD7XTMA1 delivers the lowest RDS(on)×Qg FOM in SMD form factor and unique Driver Source pinout - making it the only qualified option for compact, high-frequency (>250 kHz), high-reliability resonant converters demanding both efficiency and layout robustness.
Availability
IPDQ60R015CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and thermally optimized SMD packaging.
Supply support for IPDQ60R015CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with >50 years of silicon innovation and global manufacturing scale.
This part belongs to the CoolMOS™ CFD7 product line - engineered specifically for soft-switching resonant topologies where ultra-low Qrr, fast body diode recovery, and high dv/dt ruggedness are mandatory for efficiency and reliability.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current (ID) is 95 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (0.19 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under steady-state conditions.
Can Pin 2 (Driver Source) and Pins 3–11 (Power Source) be shorted together?
No - the datasheet explicitly warns that exchanging or shorting Driver Source (Pin 2) and Power Source (Pins 3–11) may cause malfunction. Pin 2 provides a Kelvin connection for gate driver feedback to eliminate source inductance effects, while Pins 3–11 carry high-current return paths; interconnection defeats the purpose of the separated source architecture.
Is this MOSFET suitable for hard-switched PFC applications?
While rated for industrial use, IPDQ60R015CFD7XTMA1 is optimized for soft-switching topologies (LLC, PSFB). Its ultra-low Qrr and diF/dt ruggedness provide margin in hard-switched PFC, but its RDS(on) × Qg FOM is tuned for resonant operation - designs requiring >200 kHz hard-switched PFC should verify Eoss and switching loss trade-offs against dedicated PFC MOSFETs.
What is the reflow soldering profile compliance for this package?
The PG-HDSOP-22 package is MSL1 rated and qualified for lead-free reflow soldering up to 260 °C peak temperature (per Table 3), with no floor life limitation. The exposed drain tab requires full-surface solder paste coverage and controlled ramp rates to prevent voiding and ensure mechanical integrity of the thermal interface.
IPDQ60R015CFD7XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- 22-PowerBSOP Module
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 149A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 58.2A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs:
- 251 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9900 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 657W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HDSOP-22-1
IPDQ60R015CFD7XTMA1 FAQ
1.How can I place an order for IPDQ60R015CFD7XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPDQ60R015CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPDQ60R015CFD7XTMA1 reliable?
The price and inventory of IPDQ60R015CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R015CFD7XTMA1 is usually 5 days.
3.What payment methods are accepted for IPDQ60R015CFD7XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R015CFD7XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPDQ60R015CFD7XTMA1?
IPDQ60R015CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPDQ60R015CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPDQ60R015CFD7XTMA1?
For technical support, including IPDQ60R015CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R015CFD7XTMA1 requirements.
6.How does Aetrix verify that IPDQ60R015CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?
All IPDQ60R015CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R015CFD7XTMA1 meets industry standards.
7.What is the process for return or replacement of IPDQ60R015CFD7XTMA1?
All IPDQ60R015CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R015CFD7XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPDQ60R015CFD7XTMA1 part is unused and in its original packaging.
Return procedure for IPDQ60R015CFD7XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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