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Infineon Technologies IPDQ60T017S7AXTMA1

Part No.:
IPDQ60T017S7AXTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIPDQ60T017S7AXTMA1.pdf
Description:
AUTOMOTIVE_COOLMOS
Quantity:
Payment:
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Inventory:100

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Product details

Overview

IPDQ60T017S7AXTMA1 from Infineon is a 600 V, 17 mΩ CoolMOS™ S7TA superjunction MOSFET with integrated temperature sensor (TS), optimized for static switching and high-current low-frequency applications such as HV eFuse and on-board charger disconnect switches. It delivers 488 A pulsed drain current, features 0.25 °C/W junction-to-case thermal resistance, and supports AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the IPDQ60T017S7AXTMA1 datasheet, IPDQ60T017S7AXTMA1 pinout, IPDQ60T017S7AXTMA1 application, or IPDQ60T017S7AXTMA1 equivalent, key selection criteria include RDS(on) stability over temperature, embedded junction temperature sensing accuracy, gate charge profile for driver sizing, and PG-HDSOP-22 package thermal performance in high-power DC switching layouts.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ SJ technology with monolithically integrated silicon diode and precision temperature-sensing p-n junction. The TS pin (Pin 3) provides forward-voltage-based junction temperature measurement with ±5.96 mV/K coefficient and <±0.1 V error across –40°C to 175°C.

It operates as a unidirectional high-side or low-side switch with body diode conduction capability (VSD = 0.82 V at 29 A), rated for 375 mJ single-pulse avalanche energy and 20 V/ns dv/dt ruggedness-enabling robust operation in high-voltage DC bus protection circuits without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Supports isolation of 400–600 V DC systems including EV battery disconnect and industrial rectifier outputs.
RDS(on),max 17 mΩ @ Tj = 25°C - Enables <1.5 W conduction loss at 30 A, reducing heatsink size and system footprint.
Qg,typ 196 nC - Determines gate driver power requirement; mandates ≥2 A peak drive capability for <100 ns switching transitions.
Tj max 175°C (limited duration) - Allows extended overload tolerance in circuit breaker trip cycles without thermal shutdown.
TS Pin Accuracy ±0.1 V VF error over full range - Delivers ±2.5°C junction temperature resolution for closed-loop thermal derating control.
Avalanche Energy 375 mJ - Withstands repetitive inductive turn-off transients in contactor-replacement applications without failure.
ESD Class HBM Level 2 (2 kV) - Meets IEC 61000-4-2 requirements for handling during assembly and field service.

Pinout & Package

IPDQ60T017S7AXTMA1 uses the PG-HDSOP-22 surface-mount package with exposed thermal tab (Drain-connected) for low-inductance, high-current PCB mounting. The 22-pin layout integrates power, gate, source, and diagnostic terminals in a compact 15.8 × 10.2 mm footprint.

Pin/Terminal Circuit Role Design Meaning
1–2 Gate High-impedance MOSFET control input; requires gate resistor placement on Driver Source (Pin 4) per layout guidance.
3 Temperature Sensor Anode Monolithic p-n junction outputting voltage proportional to Tj; not interchangeable with source pins.
4 Driver Source Reference node for gate driver IC return path; critical for accurate gate voltage referencing under high di/dt.
5–11 Power Source Parallel-source connection for low-resistance current return; reduces common-source inductance in high-current paths.
12–22 + Tab Drain High-voltage power terminal tied to exposed copper tab; primary thermal path to heatsink or PCB copper plane.

Key Features

Feature Design Value
Embedded Temperature Sensor On-die p-n junction with calibrated 5.96 mV/K TC enables real-time Tj monitoring without external thermistors or ICs.
Low RDS(on) Drift 0.017 Ω @ 25°C rising to only 0.036 Ω @ 150°C - Maintains efficiency in sustained high-load conditions like HV eDisconnect hold states.
High Pulse Current Rating 488 A pulsed drain current - Supports short-circuit interruption in <10 ms without bond-wire fusing.
Integrated Body Diode VSD = 0.82 V @ 29 A - Reduces need for external freewheeling diodes in bidirectional DC bus clamping topologies.
AEC-Q101 Qualified Validated for automotive powertrain and charging systems - Ensures reliability under thermal cycling, humidity, and mechanical shock.

Applications

EV Battery Disconnect Switch Industrial HV eFuse

Use Scenario: High-voltage DC isolation between traction battery and inverter during crash or fault events.

IC Role / Device Role / Timing Role: Main power semiconductor acting as fail-safe mechanical contactor replacement with sub-10 ms response.

Use Value: Eliminates arcing and contact wear; enables precise thermal derating via integrated TS pin to prevent thermal runaway during repeated fault clearing.

Use Scenario: Overcurrent protection in 400–800 V DC distribution panels for data centers and factory automation.

IC Role / Device Role / Timing Role: Solid-state current limiter triggered by digital controller upon overcurrent detection.

Use Value: Achieves <50 µs trip latency with no moving parts; TS feedback allows adaptive current rating based on ambient and load history.

On-Board Charger Input Switch High-Power Line Rectification

Use Scenario: AC/DC front-end isolation and soft-start control in bi-directional OBCs for plug-in hybrid vehicles.

IC Role / Device Role / Timing Role: Low-frequency synchronous rectifier and input stage switch operating at <10 kHz.

Use Value: Leverages CoolMOS™ S7TA's low conduction loss and high pulse current to sustain 30+ A RMS during charging bursts without thermal throttling.

Use Scenario: Active rectification in high-efficiency 10–50 kW industrial power supplies and UPS systems.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch replacing thyristors or discrete IGBT modules.

Use Value: Reduces conduction losses by >30% vs. standard 600 V IGBTs while enabling faster fault response via TS-enabled thermal margin tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPDQ60T022S7XTMA1 RDS(on) = 22 mΩ (higher conduction loss); identical TS functionality and PG-HDSOP-22 package. Suitable where cost sensitivity outweighs efficiency needs; lower gate charge (165 nC) eases driver design. Select when thermal budget allows higher on-state loss and system-level diagnostics prioritize cost over peak efficiency.
IPP60R190C7XKSA1 No integrated temperature sensor; TO-220FP package; RDS(on) = 190 mΩ - significantly higher conduction loss. Limited to non-automotive, non-diagnostic applications where thermal monitoring is handled externally. Choose only if legacy board layout prohibits PG-HDSOP-22 and TS functionality is unnecessary.

Compared with IPDQ60T017S7AXTMA1, the 022 variant trades 29% higher RDS(on) for lower Qg and cost, while the C7 lacks TS entirely-making the S7A uniquely suited for AEC-Q101-compliant, thermally aware HV switching where precision junction monitoring directly impacts safety architecture.

Availability

IPDQ60T017S7AXTMA1 is available at Aetrix Electronics and suitable for EV battery disconnect switches, industrial HV eFuses, and on-board charger input stages requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for IPDQ60T017S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ S7TA product line-designed specifically for high-current, low-frequency "static switching" applications where thermal awareness, avalanche robustness, and conduction efficiency outweigh high-speed switching needs.

FAQ

Can IPDQ60T017S7AXTMA1 be used in parallel configurations?

Yes, but strict layout rules apply: gate resistors must be placed on the Driver Source (Pin 4), not Gate, to minimize loop inductance and ensure balanced current sharing. Source pins (5–11) must be symmetrically routed, and thermal coupling between devices must be uniform to avoid thermal runaway. Parallel operation beyond two units requires individual TS monitoring per device.

What is the maximum allowable continuous drain current at 100°C case temperature?

At TC = 100°C, the device supports 65 A continuous drain current (ID) based on its 500 W Ptot rating and 0.25 °C/W RthJC. This assumes adequate heatsinking and derating per Figure 1 in the datasheet; exceeding this requires active cooling or reduced duty cycle to maintain Tj ≤ 150°C.

How does the temperature sensor interface electrically with a microcontroller?

The TS pin (Pin 3) functions as a precision diode anode. A constant current source (10–500 µA) is applied externally; the resulting forward voltage (1.56–2.13 V at 25°C) is measured and converted to temperature using the published TC (5.96 mV/K) and reference curves. No signal conditioning IC is required-only a precision current source and ADC.

Is the body diode suitable for continuous freewheeling conduction?

Yes-the integrated body diode is rated for 30 A continuous (TC = 140°C) and 488 A pulsed, with VSD = 0.82 V at 29 A. However, reverse recovery charge (Qrr = 11.8 µC) and time (trr = 490 ns) limit use in high-frequency commutation; it is optimized for low-frequency (<10 kHz), high-current freewheeling in rectifier and disconnect topologies.

IPDQ60T017S7AXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IPDQ60T017S7AXTMA1 FAQ

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6.How does Aetrix verify that IPDQ60T017S7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60T017S7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60T017S7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60T017S7AXTMA1?

All IPDQ60T017S7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60T017S7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60T017S7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60T017S7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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