Infineon Technologies IPDQ60T017S7XTMA1

Overview

IPDQ60T017S7XTMA1 from Infineon is a 600 V, 17 mΩ CoolMOS™ S7T superjunction MOSFET with integrated temperature sensor (TS), housed in PG-HDSOP-22 package. It delivers 488 A pulsed drain current, supports static switching and high-current industrial applications, and features an embedded diode (V_SD = 0.82 V) and JEDEC-qualified industrial reliability. Used in solid-state relays and high-power line rectification for UPS and solar inverters.

For engineers reviewing the IPDQ60T017S7XTMA1 datasheet, IPDQ60T017S7XTMA1 pinout, IPDQ60T017S7XTMA1 application, or IPDQ60T017S7XTMA1 equivalent, key selection criteria include R_DS(on) max (17 mΩ), integrated junction temperature sensing accuracy, pulsed current capability (488 A), thermal resistance (R_thJC = 0.25 °C/W), and gate charge (Q_g = 196 nC) for low-loss switching control.

Technical Context

This device implements a silicon-based superjunction MOSFET architecture with optimized charge balance for 600 V blocking capability and reduced conduction losses. Its integrated temperature sensor uses forward voltage of a dedicated p-n junction (IF = 10–500 µA) with linear TC (5.0–5.96 mV/K) across 25–175 °C, enabling real-time junction monitoring without external components.

The PG-HDSOP-22 package integrates a thermally exposed tab (pins 12–22) as drain, isolated gate (pins 1–2), power source (pins 5–11), and driver source (pin 4), with strict non-interchangeability between source and sense-source terminals to prevent malfunction during paralleling or protection feedback loops.

Key Specifications

Pinout & Package

PG-HDSOP-22 is a surface-mount, thermally enhanced package with exposed drain tab (pins 12–22) and isolated gate terminals. Pin 3 is the temperature sensor anode; pin 4 is driver source; pins 1–2 are gate inputs; pins 5–11 form the power source connection; pins 12–22 constitute the drain and thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, temperature-sensed 600 V MOSFET applications.

Compared with IPDQ60T017S7XTMA1, the 022 variant trades 5 mΩ higher R_DS(on) for cost reduction, while the IGBT alternative sacrifices integrated diagnostics and thermal accuracy for simpler gate drive-neither offers the same combination of low-loss, high-pulse-current, and self-sensing capability.

Availability

IPDQ60T017S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relays, high-power line rectification, and industrial circuit breakers requiring stable component supply, JEDEC-qualified reliability, and integrated thermal monitoring.

Supply support for IPDQ60T017S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ S7T product line, designed specifically for high-efficiency, high-reliability static switching in industrial power systems where thermal intelligence and conduction loss minimization are critical.

FAQ

Can IPDQ60T017S7XTMA1 be paralleled with identical units?

Yes, but gate resistors must be placed on the Driver Source (pin 4), not the Gate (pins 1–2), to ensure balanced dynamic current sharing. The source terminals (power source pins 5–11 and driver source pin 4) are not interchangeable-swapping them causes gate loop instability and potential device failure.

What is the maximum allowable temperature sensor forward current?

The temperature sensor supports up to 5 mA DC forward current continuously, with non-repetitive pulses up to 25 mA (1 ms duration). Exceeding 5 mA DC risks irreversible sensor degradation; operation at 10–500 µA is recommended for optimal linearity and accuracy across the full 25–175 °C range.

Does the internal body diode support synchronous rectification?

Yes-the integrated diode has V_SD = 0.82 V at 29 A and t_rr = 490 ns, making it suitable for synchronous rectification in PFC and DC–DC stages. However, its Q_rr = 11.8 µC requires careful gate timing to minimize reverse recovery loss and EMI.

How is thermal resistance affected when the drain tab is not soldered?

If the exposed drain tab (pins 12–22) is not fully soldered to a thermal pad, R_thJC degrades from 0.25 °C/W to >2.0 °C/W, causing junction temperature to rise >8× faster under load. This violates safe operating area limits and may trigger premature thermal shutdown or failure.