My Inquiry
My Account
Infineon Technologies IPDQ60T022S7AXTMA1
- Part No.:
- IPDQ60T022S7AXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
IPDQ60T022S7AXTMA1.pdf
- Description:
- AUTOMOTIVE_COOLMOS
- Quantity:
- Payment:
- Shipping:
Inventory:100
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPDQ60T022S7AXTMA1 from Infineon is a 600 V, 22 mΩ CoolMOS™ S7TA superjunction MOSFET with integrated temperature sensor (TS), optimized for static switching and high-current low-frequency applications such as HV eFuse and on-board charger disconnect switches. It delivers 371 A pulsed drain current, features 0.3 °C/W junction-to-case thermal resistance, and supports AEC Q101 qualification for automotive-grade reliability.
For engineers reviewing the IPDQ60T022S7AXTMA1 datasheet, IPDQ60T022S7AXTMA1 pinout, IPDQ60T022S7AXTMA1 application, or IPDQ60T022S7AXTMA1 equivalent, key selection criteria include RDS(on) stability over temperature, TS diode forward voltage linearity (1.56–2.096 V at 25°C), dv/dt ruggedness (20 V/ns), and gate charge profile (Qg = 150 nC) for robust gate drive design in high-voltage DC switching systems.
Technical Context
This device implements a silicon-based superjunction structure with embedded p-n junction temperature sensor (TS pin 3), enabling direct junction temperature monitoring without external components. Its 22-pin HDSOP package integrates source-sense and driver-source separation to minimize parasitic inductance during high-current commutation.
The MOSFET operates in enhancement mode with VGS(th) = 3.5–4.5 V and is rated for 600 V blocking, 150 °C continuous operation (175 °C short-term), and 286 mJ single-pulse avalanche energy - supporting fault-tolerant designs in high-reliability power disconnect applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on), max | 22 mΩ at VGS = 12 V, Tj = 25°C - enables low conduction loss in high-current static switch designs |
| V(BR)DSS | 600 V - supports primary-side isolation in 400–600 V DC systems like EV chargers and industrial DC distribution |
| Qg, typ | 150 nC - defines gate drive energy requirement; requires ≥1 A peak gate driver for <100 ns switching transitions |
| Tj max | 150 °C continuous, 175 °C ≤50 h - sets thermal derating boundary for heatsink sizing and system lifetime modeling |
| dv/dt ruggedness | 20 V/ns - ensures immunity to false turn-on during fast voltage transients in high-side switching configurations |
| TS forward voltage | 1.56–2.096 V at 10–500 µA, 25°C - provides linear, calibrated junction temperature sensing with ±5.6 mV/K TC |
| Ptot | 416 W at TC = 25°C - establishes maximum power handling under ideal heatsinking conditions |
Pinout & Package
IPDQ60T022S7AXTMA1 uses the PG-HDSOP-22 surface-mount package with exposed thermal tab (pin 12–22 and tab). Pin numbering follows standard HDSOP layout; gate and source pins are electrically isolated per functional role to prevent sensing error and ensure accurate temperature measurement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–2 | Gate | Control input; requires low-inductance gate loop routing to avoid oscillation during 20 V/ns dv/dt events |
| 3 | Temperature Sensor Anode | Forward-biased p-n junction output; must be biased with constant current (10–500 µA) for linear Tj readout |
| 4 | Driver Source | Reference node for gate driver IC return path; separates high-di/dt source current from sense circuitry |
| 5–11 | Power Source | Main current return path; connects to PCB copper pour for thermal conduction and low-impedance grounding |
| 12–22 + Tab | Drain | High-voltage output terminal; tab is electrically connected to drain and serves as primary thermal interface |
Key Features
| Feature | Design Value |
|---|---|
| Integrated temperature sensor | Calibrated forward voltage vs. Tj (1.56–2.096 V @ 25°C) enables ±2°C junction temp accuracy without external thermistors |
| Optimized for static switching | Low RDS(on) drift and high pulse current (371 A) support reliable HV contactor replacement in eDisconnect systems |
| Source-sense architecture | Dedicated Driver Source (pin 4) and Power Source (pins 5–11) reduce ground bounce and improve gate control fidelity |
| AEC Q101 qualified | Validated for automotive powertrain and charging applications requiring extended temperature range and long-term reliability |
| Enhanced dv/dt ruggedness | 20 V/ns rating allows operation in noisy high-voltage bus environments without spurious turn-on or latch-up |
Applications
| High-Voltage eFuse | On-Board Charger Disconnect |
|---|---|
Use Scenario: Fast-acting overcurrent protection in 400–800 V battery systems, triggered by MCU upon fault detection. IC Role / Device Role / Timing Role: High-side static switch with integrated temperature sensing for real-time thermal margin monitoring. Use Value: Eliminates need for separate current shunt and NTC, reducing BOM count and PCB area while improving trip accuracy under varying ambient conditions. |
Use Scenario: Isolation of AC/DC converter from traction battery during charging state transitions or fault conditions. IC Role / Device Role / Timing Role: Bidirectional blocking switch with precise junction temperature feedback for thermal derating during high-power charging cycles. Use Value: Enables dynamic current limiting based on actual die temperature rather than case temperature, increasing usable power density by up to 18%. |
| HV DC Circuit Breaker | Line Rectification Switch |
Use Scenario: Solid-state replacement for mechanical breakers in DC microgrids and energy storage systems. IC Role / Device Role / Timing Role: Low-frequency (<1 kHz) high-current switch with avalanche energy rating (286 mJ) for safe fault interruption. Use Value: Achieves >10⁶ operations without contact wear or arcing, supporting maintenance-free operation over 15-year system lifetime. |
Use Scenario: Active rectification in high-efficiency industrial motor drives and UPS systems operating at 600 V DC link. IC Role / Device Role / Timing Role: Synchronous rectifier with body diode VSD = 0.82 V and trr = 410 ns for reduced reverse recovery losses. Use Value: Cuts conduction losses by 32% compared to standard Si diodes, lowering heatsink requirements and improving system efficiency by 1.2% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage static switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPDQ60T032S7AXTMA1 | RDS(on) = 32 mΩ (higher), same 600 V rating, identical TS functionality and package | Lower cost option where 22 mΩ RDS(on) is not required; suitable for lower-current eFuse designs | Select when thermal budget allows higher conduction loss and system current < 180 A RMS |
| IPB60R037S7XTMA1 | TO-220FP package, no integrated temperature sensor, RDS(on) = 37 mΩ, same 600 V rating | Lacks TS diagnostics; requires external thermal monitoring and larger heatsink due to higher RDS(on) | Choose only if board space constraints prohibit HDSOP-22 or TS functionality is unnecessary |
Compared with IPDQ60T032S7AXTMA1 and IPB60R037S7XTMA1, IPDQ60T022S7AXTMA1 uniquely combines lowest RDS(on), integrated temperature sensing, and AEC Q101 qualification in a thermally optimized surface-mount package - making it the optimal choice for space-constrained, high-reliability automotive and industrial HV disconnect systems.
Availability
IPDQ60T022S7AXTMA1 is available at Aetrix Electronics and suitable for high-voltage eFuse, on-board charger disconnect, and HV DC circuit breaker applications requiring stable component supply, automotive-grade qualification, and long-term lifecycle support.
Supply support for IPDQ60T022S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949 and IATF 16949 standards.
This part belongs to the CoolMOS™ S7TA product line, engineered specifically for high-current, low-frequency switching in automotive and industrial high-voltage systems where thermal intelligence and reliability outweigh high-speed switching needs.
FAQ
Can IPDQ60T022S7AXTMA1 be used in parallel configurations?
Yes, but gate resistors must be placed on the Driver Source (pin 4), not the Gate, to balance dynamic current sharing. The datasheet explicitly warns against exchanging source pins, as doing so causes inaccurate temperature sensing and potential thermal runaway. Layout symmetry and matched trace inductance are mandatory for stable paralleling.
What is the maximum allowable gate resistor value for reliable switching?
The gate resistor must limit peak gate current to ≤1.5 A while maintaining td(on) < 50 ns and td(off) < 200 ns under 300 V VDD. Based on Qg = 150 nC and typical 13 V gate drive, RG should not exceed 5.3 Ω. Higher values increase switching losses and risk incomplete turn-on during high dv/dt events.
How is the temperature sensor calibrated and what accuracy can be expected?
The TS diode is characterized across temperature and current (10–500 µA) with forward voltage specified at 25°C and 175°C. Using the provided TC (5.0–5.96 mV/K), junction temperature can be derived with ±2°C accuracy over 25–150°C when using precision current sources and 16-bit ADCs with offset calibration.
Is this device suitable for linear-mode operation?
No. The datasheet explicitly states: "The CoolMOSTM mentioned in this datasheet shall not be operated in linear mode." It is designed exclusively for switching operation in the saturation and cutoff regions. Linear-mode use risks thermal instability, localized hot spots, and premature failure due to uncontrolled power dissipation.
IPDQ60T022S7AXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
IPDQ60T022S7AXTMA1 FAQ
1.How can I place an order for IPDQ60T022S7AXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPDQ60T022S7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPDQ60T022S7AXTMA1 reliable?
The price and inventory of IPDQ60T022S7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60T022S7AXTMA1 is usually 5 days.
3.What payment methods are accepted for IPDQ60T022S7AXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60T022S7AXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPDQ60T022S7AXTMA1?
IPDQ60T022S7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPDQ60T022S7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPDQ60T022S7AXTMA1?
For technical support, including IPDQ60T022S7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60T022S7AXTMA1 requirements.
6.How does Aetrix verify that IPDQ60T022S7AXTMA1 is sourced from the original manufacturer or authorized distributors?
All IPDQ60T022S7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60T022S7AXTMA1 meets industry standards.
7.What is the process for return or replacement of IPDQ60T022S7AXTMA1?
All IPDQ60T022S7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60T022S7AXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPDQ60T022S7AXTMA1 part is unused and in its original packaging.
Return procedure for IPDQ60T022S7AXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPDQ60T022S7AXTMA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
