Infineon Technologies IPDQ60T022S7XTMA1

Overview

IPDQ60T022S7XTMA1 from Infineon is a 600 V, 22 mΩ CoolMOS™ S7T superjunction MOSFET with integrated temperature sensor (TS), housed in PG-HDSOP-22 package. It delivers 24 A continuous drain current at T_C = 25°C, supports 371 A pulsed operation, and features a body diode with 0.82 V forward voltage. Designed for static switching and high-current industrial power conversion, it enables solid-state relays and high-efficiency line rectification in UPS and solar inverters.

For engineers reviewing the IPDQ60T022S7XTMA1 datasheet, IPDQ60T022S7XTMA1 pinout, IPDQ60T022S7XTMA1 application, or IPDQ60T022S7XTMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, embedded junction temperature sensing accuracy, gate charge (150 nC), dv/dt ruggedness (20 V/ns), and thermal resistance (R_thJC = 0.3 °C/W).

Technical Context

This device implements a silicon-based superjunction MOSFET architecture with optimized charge balance for low conduction loss and high avalanche robustness. Its integrated temperature sensor uses a calibrated silicon diode (forward voltage shift ≈5.2–5.96 mV/K) referenced to the source, enabling real-time junction temperature monitoring without external components.

The PG-HDSOP-22 package integrates a thermally enhanced exposed tab (Drain-connected) and separates Driver Source (Pin 4) from Power Source (Pins 5–11) to minimize source inductance and improve switching control fidelity. Gate drive requires careful resistor placement on Driver Source-not Gate-to ensure stable paralleling behavior.

Key Specifications

Pinout & Package

IPDQ60T022S7XTMA1 uses the PG-HDSOP-22 surface-mount package with an exposed copper drain tab for thermal and electrical connection. The 22-pin layout separates high-current paths (Drain Pins 12–22 + Tab) from signal-level gate and sense terminals to minimize coupling and enable precise thermal feedback.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current static switching applications.

Compared with IPDQ60T022S7XTMA1, IPW60R024P7XKSA1 trades thermal intelligence for lower unit cost and broader second-source availability, while IPP60R035C7XKSA1 prioritizes ease of gate drive and legacy package compatibility at the expense of conduction efficiency and thermal visibility.

Availability

IPDQ60T022S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay design, high-power line rectification, and industrial circuit breaker development requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPDQ60T022S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to the CoolMOS™ S7T product line, engineered specifically for static switching and high-current, low-frequency power control-emphasizing thermal intelligence, avalanche robustness, and system-level reliability in mission-critical infrastructure.

FAQ

What is the function of Pin 4 (Driver Source) versus Pins 5–11 (Power Source)?

Pin 4 (Driver Source) serves exclusively as the reference node for the gate driver circuit, isolating gate control from high-current return paths. Pins 5–11 form the Power Source terminal, carrying full load current back to the system ground. This separation prevents source inductance from distorting gate voltage waveforms-critical for stable paralleling and noise immunity in high-di/dt applications.

How is the temperature sensor calibrated and used in practice?

The temperature sensor is a factory-calibrated silicon diode (Pin 3 anode, Power Source as cathode) with a forward voltage that decreases linearly with junction temperature (slope ≈5.2–5.96 mV/K). Users apply a constant 10–500 µA current source and measure VF to derive T_j using the provided lookup tables or polynomial coefficients in the datasheet-enabling real-time thermal protection without external sensors.

Can IPDQ60T022S7XTMA1 be paralleled with identical units?

Yes, but only with strict adherence to layout guidelines: gate resistors must be placed on Driver Source (Pin 4), not Gate; drain and source traces must be symmetrical; and thermal coupling to the heatsink must be uniform across all devices. The separate Driver/Power Source pins and matched R_DS(on) tolerance (±20%) enable stable current sharing up to four devices in parallel.

What is the maximum allowable pulsed drain current and under what conditions?

The pulsed drain current is rated at 371 A for pulses ≤100 µs at T_C = 25°C, limited by single-pulse SOA and junction temperature rise. This value assumes proper gate drive (V_GS ≥ 12 V), minimal trace inductance, and adequate heatsinking to prevent cumulative thermal stress. Exceeding 100 µs pulse width requires derating per the Safe Operating Area curves in the datasheet.