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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R029CFD7AXTMA1

Name: IPDQ65R029CFD7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ65R029CFD7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R029CFD7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R029CFD7AXTMA1.pdf

Description:: AUTOMOTIVE_COOLMOS

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Product details

Overview

IPDQ65R029CFD7AXTMA1 from Infineon is a 650 V, 29 mΩ automotive-qualified Superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (di/dt = 1300 A/μs), and 139 nC total gate charge - optimized for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPDQ65R029CFD7AXTMA1 datasheet, IPDQ65R029CFD7AXTMA1 pinout, IPDQ65R029CFD7AXTMA1 application, or IPDQ65R029CFD7AXTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche ruggedness (358 mJ), dv/dt immunity (120 V/ns), and source-sense pin separation for accurate high-side current sensing in high-frequency PFC stages.

Technical Context

This CoolMOS™ CFD7A device implements a silicon-based superjunction structure with charge compensation, enabling ultra-low R_DS(on) × Q_g and R_DS(on) × E_oss figures of merit. Its Kelvin source architecture separates driver and power return paths to suppress common-source inductance effects during hard switching.

The integrated fast-recovery body diode (t_rr = 208 ns, Q_rr = 1.60 μC) supports zero-voltage switching in resonant topologies without external anti-parallel diodes. It is fully qualified per AEC-Q101 and 100% avalanche tested at I_AS = 7.3 A, V_DD = 50 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage compatible with 400 V AC input PFC and 400–800 V DC bus systems
R_DS(on)	29 mΩ @ T_j = 25°C - Enables low conduction loss in high-current OBC primary side (I_D,pulse = 304 A)
Q_g	139 nC - Total gate charge determines drive strength requirement and switching loss trade-off at >100 kHz
E_oss	20.9 μJ @ 400 V - Low output energy enables efficient soft-switching in LLC converters
di/dt (body diode)	1300 A/μs - Supports fast commutation in phase-shifted full-bridge without oscillation or shoot-through risk
T_j,max	150 °C - Junction temperature rating allows operation in sealed automotive power modules without derating
R_thJC	0.27 °C/W - Low thermal resistance enables 463 W power dissipation at T_C = 25°C with minimal heatsink

Pinout & Package

IPDQ65R029CFD7AXTMA1 uses the PG-HDSOP-22 package - a 22-pin thermally enhanced surface-mount outline with exposed metal tab for direct heatsinking and dual-source Kelvin configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 12–22 + Tab)	Main power drain connection	All drain pins and metal tab are internally shorted - provides parallel current paths and low-inductance thermal path to heatsink
Gate (Pin 1)	Control terminal	Standard MOSFET gate input; requires gate resistor placement on Driver Source (Pin 2), not Gate, when paralleling devices
Power Source (Pins 3–11)	High-current source return	Carries full load current; connects to main PCB ground plane or busbar - must not be interchanged with Sense Source
Driver Source (Pin 2)	Kelvin sense reference	Provides low-noise gate drive reference; separates control loop from power loop to minimize switching noise coupling
Internal Body Diode	Integrated antiparallel diode	Fast recovery (t_rr = 208 ns) and high di/dt capability enable use in resonant topologies without external diode

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and charging applications including 15-year lifetime under thermal cycling stress
Ultra-low R_DS(on) × Q_g	Enables >98% efficiency in 3.3 kW OBC PFC stage at 100 kHz while reducing gate driver power demand
Kelvin source terminals	Eliminates source inductance impact on switching waveform fidelity - critical for precise timing control in ZVS circuits
100% single-pulse avalanche rated	Guarantees robustness against transient overvoltage events (E_AS = 358 mJ) without derating in unregulated bus conditions
Low E_oss & fast body diode	Reduces turn-off loss and eliminates reverse recovery spikes in LLC half-bridge operation up to 1 MHz

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: 6.6 kW bidirectional OBC with active front-end PFC operating at 70–100 kHz.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost PFC with precise current regulation.

Use Value: 29 mΩ R_DS(on) and Kelvin source reduce conduction loss by 18% vs. prior-gen CFD6, improving light-load efficiency by 1.2%.

Use Scenario: Isolated 3.3 kW DC-DC stage converting 400 V battery to 400 V HV auxiliary supply in BEV platforms.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge LLC topology with ZVS across full load range.

Use Value: Integrated fast body diode (di/dt = 1300 A/μs) enables reliable ZVS down to 10% load without snubbers or dead-time tuning.

ZVS Phase-Shift Full-Bridge

Industrial 3-Phase PFC Rectifier

Use Scenario: 15 kW traction charger using phase-shift modulation with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Lagging-leg switch subjected to hard-commutated turn-on; relies on body diode conduction before gate activation.

Use Value: 1300 A/μs di/dt rating prevents diode snap-off and voltage overshoot during commutation, eliminating need for external diodes.

Use Scenario: 11 kW industrial EVSE with three-phase Vienna rectifier topology requiring high reliability and low THD.

IC Role / Device Role / Timing Role: Active switch in boost leg with bidirectional current capability and high dv/dt immunity.

Use Value: 120 V/ns dv/dt ruggedness ensures stable operation under fast grid transients (e.g., capacitor bank switching) without false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R030CFD7XKSA1	TO-247-4L package, same R_DS(on) (30 mΩ), higher R_thJC (0.45 °C/W), no Kelvin source	Limited to lower-power (<5 kW) or forced-air-cooled designs; lacks driver-source isolation for precision gate control	Prefer for cost-sensitive industrial SMPS where Kelvin source is unnecessary and through-hole mounting is required
IPP65R045CFD7XKSA1	PG-TO220-3-1 package, higher R_DS(on) (45 mΩ), 100% avalanche tested, no Kelvin source	Suitable only for <3 kW applications; higher conduction loss increases thermal design margin requirements	Select when board space constraints prohibit HDSOP-22 footprint and system power level permits higher R_DS(on)

Compared with IPW65R030CFD7XKSA1 and IPP65R045CFD7XKSA1, IPDQ65R029CFD7AXTMA1 delivers superior thermal performance (0.27 °C/W), precise gate control via Kelvin source, and higher pulse current rating (304 A), making it the only choice for compact, high-power automotive OBCs requiring ZVS reliability.

Availability

IPDQ65R029CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC DC-DC converters, and ZVS phase-shift full-bridge inverters requiring stable component supply across automotive production lifecycles.

Supply support for IPDQ65R029CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ CFD7A product line - engineered specifically for automotive-grade high-efficiency power conversion in electric vehicle charging and traction systems, emphasizing reliability under thermal cycling and radiation-hardened operation.

FAQ

Can IPDQ65R029CFD7AXTMA1 be used in linear mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS™ mentioned in this datasheet to operate in 'linear mode'" due to uncontrolled thermal runaway risk. For applications requiring analog conduction, contact Infineon sales for validated alternatives with SOA-rated linear operation capability.

What is the purpose of separating Power Source and Driver Source pins?

The separation isolates the high-current power return path (Pins 3–11) from the low-noise gate drive reference (Pin 2). This prevents voltage drop across source inductance from distorting the gate-to-source voltage waveform, ensuring clean switching edges and stable ZVS behavior - especially critical in high-frequency resonant converters.

Is the internal body diode suitable for reverse conduction in bidirectional OBC operation?

Yes. The integrated body diode is characterized for reverse recovery (t_rr = 208 ns, Q_rr = 1.60 μC) and di/dt (1300 A/μs), making it suitable for bidirectional conduction in V2G-capable OBCs. However, its forward voltage (V_SD = 1.0 V @ 35.8 A) is higher than discrete SiC diodes, so efficiency trade-offs must be evaluated at full load.

How does the PG-HDSOP-22 package improve thermal performance over TO-247?

The PG-HDSOP-22 package features an exposed metal tab directly soldered to the PCB, achieving R_thJC = 0.27 °C/W - 40% lower than typical TO-247-4L (0.45 °C/W). This enables higher power density and eliminates mechanical mounting hardware, reducing assembly cost and thermal interface resistance in automotive module integration.

IPDQ65R029CFD7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 35.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.79mA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7149 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 463W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R029CFD7AXTMA1 FAQ

1.How can I place an order for IPDQ65R029CFD7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R029CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R029CFD7AXTMA1 reliable?

The price and inventory of IPDQ65R029CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R029CFD7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R029CFD7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R029CFD7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R029CFD7AXTMA1?

IPDQ65R029CFD7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R029CFD7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R029CFD7AXTMA1?

For technical support, including IPDQ65R029CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R029CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ65R029CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R029CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R029CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R029CFD7AXTMA1?

All IPDQ65R029CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R029CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R029CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R029CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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