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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF010N04NF2SATMA1

Name: IPF010N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPF010N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF010N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPF010N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPF010N04NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO263-7 package, rated for 40 V drain-source voltage, 1.0 mΩ maximum R_DS(on) at V_GS = 10 V, and 294 A continuous drain current at T_C = 25 °C. It serves as a high-current synchronous rectifier or primary-side switch in high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IPF010N04NF2SATMA1 datasheet, IPF010N04NF2SATMA1 pinout, IPF010N04NF2SATMA1 application, or IPF010N04NF2SATMA1 equivalent, key selection criteria include its 0.51 °C/W junction-to-case thermal resistance, 176 nC total output charge (Q_oss), 100% avalanche-tested ruggedness, and optimized gate charge profile for hard-switched and synchronous buck topologies.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FoM) of ~159 nC × 1.0 mΩ. Its gate plateau voltage is 4.2 V, enabling robust drive margin with standard 5 V or 3.3 V logic-level controllers.

The integrated body diode exhibits 0.83 V typical forward voltage at 100 A and 25 °C, with 55 ns reverse recovery time under dI/dt = 100 A/μs - optimized for synchronous rectification in high-frequency (>500 kHz) power stages where diode conduction loss and switching loss must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input systems with safety margin
R_DS(on), max	1.0 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 100 A, critical for high-current POL converters
I_D, cont	294 A at T_C = 25 °C - Supports >3 kW power delivery with minimal paralleling in server VRMs
Q_oss	176 nC - Low output charge reduces turn-off energy loss in hard-switched applications
R_thJC	0.51 °C/W - Enables direct heatsink mounting for high-power density designs without thermal derating
Avalanche Energy	637 mJ (single pulse) - Withstands repetitive inductive switching stress in motor control H-bridges
Package	PG-TO263-7 - Exposed drain tab + 6-source pins reduce source inductance and improve current sharing

Pinout & Package

PG-TO263-7 package with exposed drain tab on underside; 7-pin surface-mount layout optimized for low-inductance, high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires <2.5 Ω external gate resistor to damp ringing in fast-switching layouts
Pins 2,3,5,6,7	Source	Five parallel source terminals minimize common-source inductance and improve gate-drive stability
Pin 4 + Tab	Drain	Main power output node; tab provides low-thermal-resistance path to heatsink and high-current return path

Key Features

Feature	Design Value
N-channel normal-level gate	Threshold voltage 2.1–3.4 V enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting
100% avalanche tested	Guarantees robustness against inductive kickback in motor gate drivers and flyback snubbers
Optimized Q_g/Q_oss ratio	159 nC total gate charge with 176 nC Q_oss balances switching speed and EMI in 300–1000 kHz SMPS
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21 for automotive and industrial end-equipment compliance

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-current point-of-load regulation for CPU/GPU VRMs operating at >500 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; conducts during low-side interval with precise dead-time control.

Use Value: 1.0 mΩ R_DS(on) and 0.51 °C/W R_thJC enable >95% efficiency at 200 A per phase while maintaining <85 °C case temperature.

Use Scenario: Half-bridge leg in 3-phase inverter for servo and BLDC motor control up to 10 kW.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles bidirectional current with fast 31 ns fall time.

Use Value: 637 mJ single-pulse avalanche rating and 1176 A pulsed current capability ensure reliability during motor stall and regenerative braking events.

Telecom DC-DC Converters

Onboard Charger (OBC) Systems

Use Scenario: Primary-side switch in isolated 48 V–12 V intermediate bus converter for data center power shelves.

IC Role / Device Role / Timing Role: Hard-switched active clamp forward or phase-shifted full-bridge switch; operates at 300–600 kHz.

Use Value: 176 nC Q_oss minimizes turn-off loss; 23 ns turn-on delay supports tight timing control in digital PWM controllers.

Use Scenario: Secondary-side synchronous rectifier in bi-directional AC/DC OBC for EVs, handling 3.3–22 kW power levels.

IC Role / Device Role / Timing Role: Low-side rectifier in LLC resonant converter; conducts during ZVS intervals with low V_SD.

Use Value: 0.83 V typical body diode V_F and 55 ns t_rr reduce conduction loss and reverse recovery spikes during light-load operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB010N04N5ATMA1	Same R_DS(on) (1.0 mΩ), but in PG-TO263-7-11 package with 11-pin source configuration; higher Q_g (180 nC)	Designed for even lower source inductance in >1 MHz GaN-assisted hybrid topologies	Select when minimizing common-source inductance is prioritized over gate drive loss
IRFH5020TRPBF	Higher R_DS(on) (1.3 mΩ), same 40 V rating, TO-263-7 package, Q_oss = 145 nC	Legacy Vishay part with broader distributor availability but no avalanche rating	Choose only if cost sensitivity outweighs ruggedness requirements and thermal margin is sufficient

Compared with IPB010N04N5ATMA1 and IRFH5020TRPBF, IPF010N04NF2SATMA1 delivers superior thermal performance (0.51 °C/W vs. ≥0.65 °C/W) and guaranteed avalanche capability - critical for industrial motor drives and telecom power where fault tolerance is non-negotiable.

Availability

IPF010N04NF2SATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, industrial motor drives, and onboard charger systems requiring stable component supply across multi-year production cycles.

Supply support for IPF010N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This device belongs to the StrongIRFET™2 family - engineered specifically for high-efficiency, high-current power conversion in data center, industrial, and e-mobility applications where low R_DS(on), ruggedness, and thermal performance are design-critical.

FAQ

What is the maximum allowable gate-source voltage for IPF010N04NF2SATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –10 V to +10 V. Exceeding +20 V risks permanent gate oxide damage; applying negative V_GS beyond –20 V may cause threshold shift or leakage increase. Gate drive circuits must include clamping or zener protection to stay within this limit.

Does IPF010N04NF2SATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 A switching at 500 kHz, a 1.6 Ω external resistor is validated in the datasheet for optimal turn-on/turn-off balance. Lower values (<1 Ω) increase peak gate current and EMI; higher values (>3 Ω) slow switching and raise losses.

Can IPF010N04NF2SATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout must equalize gate loop inductance and source inductance across all paralleled devices; use Kelvin source connections and matched gate resistors. Derate total current by 15% for 2× parallel, 25% for 4×, due to thermal coupling effects.

Is the drain tab electrically isolated from the PCB copper pour in PG-TO263-7 packages?

No - the drain tab is metallurgically bonded to the die's drain region and is electrically identical to Pin 4. When mounted on a heatsink or thermal pad, it must be electrically isolated using insulating thermal pads or ceramic substrates if the heatsink is grounded or at a different potential than the drain node.

IPF010N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Ta), 289A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 189µA

Gate Charge (Qg) (Max) @ Vgs:: 239 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-U02

IPF010N04NF2SATMA1 FAQ

1.How can I place an order for IPF010N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF010N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF010N04NF2SATMA1 reliable?

The price and inventory of IPF010N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF010N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF010N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF010N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF010N04NF2SATMA1?

IPF010N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF010N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF010N04NF2SATMA1?

For technical support, including IPF010N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF010N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPF010N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF010N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF010N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF010N04NF2SATMA1?

All IPF010N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF010N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF010N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF010N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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