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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF015N10N5ATMA1

Name: IPF015N10N5ATMA1
Brand: Infineon Technologies
SKU: IPF015N10N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF015N10N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IPF015N10N5ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:34

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Product details

Overview

IPF015N10N5ATMA1 from Infineon Technologies is a 100 V, 276 A N-channel enhancement-mode MOSFET in PG-TO263-7 (D²-PAK) package with 1.53 mΩ max R_DS(on), 168 nC total gate charge, and 213 nC output charge. It serves as a high-current synchronous rectifier or primary-side switch in high-frequency DC-DC converters and motor drives.

For engineers reviewing the IPF015N10N5ATMA1 datasheet, IPF015N10N5ATMA1 pinout, IPF015N10N5ATMA1 application, or IPF015N10N5ATMA1 equivalent, key selection criteria include its low R_DS(on) × Q_G figure-of-merit, 100% avalanche ruggedness, thermal resistance of 0.3 °C/W (junction-to-case), and validated industrial temperature range (−55 °C to +175 °C).

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology optimized for high-frequency switching up to 1 MHz, with gate plateau voltage at 4.4 V and transconductance of 130–260 S. Its reverse diode exhibits 0.86 V typical forward voltage at 100 A and 88 ns reverse recovery time under defined test conditions.

The MOSFET supports unclamped inductive switching with 1166 mJ single-pulse avalanche energy and operates with gate drive voltages from 4.5 V to 10 V. Thermal design relies on its 0.3 °C/W R_thJC and requires ≥6 cm² copper area for 40 °C/W R_thJA in vertical FR4 PCB mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V and 60 V bus systems with margin
R_DS(on), max	1.53 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.5 W conduction loss at 100 A
I_D, cont	276 A at T_C = 25 °C - Supports high-current power stages without paralleling
Q_G	168 nC - Determines gate driver current requirement (~1.7 A peak for 100 ns turn-on)
E_AS	1166 mJ - Withstands unclamped inductive energy in motor control fault conditions
R_thJC	0.3 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Package: PG-TO263-7 (D²-PAK), surface-mount, thermally enhanced with exposed drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input; low-impedance node requiring controlled slew rate to minimize EMI
Pins 2, 3, 5, 6, 7	Source	Common return path for power and signal; multiple pins reduce source inductance
Pin 4 + Tab	Drain	Main power output terminal; tab provides primary thermal path to heatsink

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_G)	257 Ω·nC - Reduces combined conduction and switching losses in 100–500 kHz SMPS
100% avalanche tested	1166 mJ single-pulse rating - Eliminates need for external snubbers in inductive load switching
Low Q_oss (213 nC)	Minimizes turn-off loss and improves light-load efficiency in hard-switched topologies
Halogen-free & RoHS-compliant	Meets IPC-J-STD-709 and IEC 61249-2-21 - Required for industrial and automotive end equipment

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 48 V input, 0.8–1.2 V output CPU core supply delivering up to 600 A.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500–800 kHz.

Use Value: 1.53 mΩ R_DS(on) limits conduction loss to <0.9 W per phase at 120 A, enabling >94% efficiency at full load.

Use Scenario: 3-phase inverter driving 15 kW PMSM in CNC spindle or pump system.

IC Role / Device Role / Timing Role: High-side and low-side switch in 6-pack configuration, switching at ≤20 kHz.

Use Value: 1166 mJ avalanche capability allows safe operation during short-circuit events without desaturation protection circuitry.

Onboard Charger (OBC)

Renewable Energy Inverter

Use Scenario: Bidirectional AC/DC stage in 11 kW EV onboard charger using totem-pole PFC.

IC Role / Device Role / Timing Role: Fast-switching PFC switch handling 100 kHz+ operation with zero-voltage switching assist.

Use Value: Low Q_gd/Q_g ratio (≈30%) enables clean turn-off with minimal Miller-induced shoot-through risk.

Use Scenario: DC link switching in 10 kW string inverter connecting solar array to grid.

IC Role / Device Role / Timing Role: DC bus switch in H-bridge topology, rated for 1000 V DC system with 100 V margin.

Use Value: −55 °C to +175 °C operating range ensures reliability across desert and arctic ambient conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL260N10F7	R_DS(on) = 1.45 mΩ, Q_G = 180 nC, TO-263-7 package	Slightly lower R_DS(on) but higher gate charge increases switching loss at >300 kHz	Prefer for lower conduction-loss priority in <300 kHz motor drives
IXFH180N10P	R_DS(on) = 1.65 mΩ, Q_G = 145 nC, TO-247-3 package	Higher R_DS(on) but lower Q_G and through-hole mounting simplifies thermal management	Prefer for prototyping or high-reliability industrial inverters where layout flexibility matters

Compared with STL260N10F7 and IXFH180N10P, IPF015N10N5ATMA1 delivers the best balance of ultra-low R_DS(on) and moderate Q_G, making it optimal for high-frequency, high-current applications where both conduction and switching losses must be minimized simultaneously.

Availability

IPF015N10N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and renewable energy inverters requiring stable component supply and long-term industrial qualification.

Supply support for IPF015N10N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency power conversion in data center, industrial, and e-mobility applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 211 A continuous drain current at T_C = 100 °C and V_GS = 10 V. This value is derived from thermal de-rating curves and accounts for junction temperature limits and package thermal resistance. It reflects real-world operation in compact heatsink designs where case temperature exceeds ambient by >75 °C.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 2.2–3.8 V and is fully specified for 0 V turn-off. A negative gate voltage is not required, though applying −5 V can improve immunity to dv/dt-induced false turn-on in high-noise bridge configurations.

Can IPF015N10N5ATMA1 replace older OptiMOSTM 4 devices in existing designs?

Yes-pin-compatible with IPB180N10N5 (same PG-TO263-7 footprint and pinout), but offers 15% lower R_DS(on) and improved Q_oss. Layout reuse is possible; gate drive strength should be verified due to higher Q_G (168 nC vs. 145 nC).

Is the drain tab electrically isolated from the PCB mounting surface?

No-the drain tab is internally connected to Pin 4 and is electrically active. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is referenced to drain potential. Thermal interface material must also be electrically insulating if isolation is required.

IPF015N10N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta), 276A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.53mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 279µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-1

IPF015N10N5ATMA1 FAQ

1.How can I place an order for IPF015N10N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF015N10N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF015N10N5ATMA1 reliable?

The price and inventory of IPF015N10N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF015N10N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPF015N10N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF015N10N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF015N10N5ATMA1?

IPF015N10N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF015N10N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF015N10N5ATMA1?

For technical support, including IPF015N10N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF015N10N5ATMA1 requirements.

6.How does Aetrix verify that IPF015N10N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF015N10N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF015N10N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPF015N10N5ATMA1?

All IPF015N10N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF015N10N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF015N10N5ATMA1 part is unused and in its original packaging.

Return procedure for IPF015N10N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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