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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF019N12NM6ATMA1

Name: IPF019N12NM6ATMA1
Brand: Infineon Technologies
SKU: IPF019N12NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF019N12NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPF019N12NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:2,021

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Product details

Overview

IPF019N12NM6ATMA1 from Infineon Technologies is a 120 V, 1.9 mΩ N-channel OptiMOSTM 6 power MOSFET in PG-TO263-7 (D²-PAK) package, rated for 254 A continuous drain current at T_C=25 °C and optimized for high-frequency switching in industrial DC-DC converters and motor drives. Its low Q_g (113 nC), ultra-low Q_rr (336 nC @ 1000 A/µs), and 175 °C operation enable robust performance in hard-switched SMPS and synchronous rectification.

For engineers reviewing the IPF019N12NM6ATMA1 datasheet, IPF019N12NM6ATMA1 pinout, IPF019N12NM6ATMA1 application, or IPF019N12NM6ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge × R_DS(on) figure-of-merit (FOM), reverse recovery behavior under high di/dt, thermal resistance (R_thJC = 0.38 °C/W), and D²-PAK 7-pin layout with tab-as-drain configuration.

Technical Context

This device implements a trench-gate, superjunction-based N-channel MOSFET architecture with integrated body diode optimized for low Q_rr and soft recovery. It operates with normal-level gate drive (V_GS(th) = 2.6–3.6 V) and delivers stable R_DS(on) up to 175 °C junction temperature, supported by a 1406 mJ single-pulse avalanche energy rating.

The PG-TO263-7 package features an exposed drain tab (Pin 4 + metal tab) for low-inductance, high-current conduction and thermal path optimization. Pin 1 is gate, Pins 2/3/5/6/7 are source terminals - enabling parallel-source routing and reduced source inductance critical for high-speed switching stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage for 48 V–96 V bus applications with 20 % margin
R_DS(on), max	1.9 mΩ @ V_GS=10 V, I_D=100 A - Enables <1.9 W conduction loss at 100 A, critical for high-efficiency power stages
I_D, cont	254 A @ T_C=25 °C - Supports high-current output stages without paralleling in compact industrial inverters
Q_g	113 nC - Low gate charge reduces driver power demand and enables >500 kHz switching with standard gate drivers
Q_rr	336 nC @ dI/dt=1000 A/µs - Minimizes turn-on losses and EMI in hard-switched topologies with fast current transients
E_AS	1406 mJ - Robust single-pulse avalanche capability ensures reliability during load dump or short-circuit events
R_thJC	0.38 °C/W - Enables high-power dissipation with minimal junction-to-case temperature rise on properly heatsinked PCBs

Pinout & Package

IPF019N12NM6ATMA1 uses the PG-TO263-7 (D²-PAK) surface-mount package with an exposed copper drain tab for thermal and electrical conduction. The 7-pin layout supports low-inductance source return paths and high-current drain routing via the tab and Pin 4.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring ≤10 V logic-level drive; low C_iss (8.1–11 nF) eases driver selection
Pins 2,3,5,6,7	Source	Multiple parallel source terminals reduce package inductance and improve switching stability
Pin 4 + Tab	Drain	Main high-current drain path; tab provides primary thermal path and low-inductance connection to PCB copper

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	215 Ω·nC - Directly improves efficiency in high-frequency SMPS by minimizing combined conduction and switching losses
Optimized body diode Q_rr	336 nC @ 1000 A/µs - Reduces turn-on loss and voltage overshoot in synchronous rectifiers and half-bridge freewheeling
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating, extending system lifetime
MSL 1 moisture sensitivity	Eliminates bake requirements before reflow, supporting standard SMT assembly processes without special handling
Halogen-free & RoHS-compliant plating	Meets IPC-1752A and IEC 61249-2-21 standards for environmentally regulated industrial and automotive-adjacent systems

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: 3-phase inverter stage in 5–15 kW servo drives operating at 20–100 kHz switching frequency with forced-air cooling.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 6-pack IGBT/MOSFET inverter modules, handling peak currents >300 A.

Use Value: 1.9 mΩ R_DS(on) and 0.38 °C/W R_thJC maintain <100 °C junction temperature under full load, avoiding thermal shutdown.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated LLC resonant converter for AI accelerator racks.

IC Role / Device Role / Timing Role: High-frequency hard-switched MOSFET in asymmetric half-bridge topology, operating at 300–600 kHz.

Use Value: Low Q_rr (336 nC) and soft-recovery body diode minimize dead-time losses and EMI generation during ZVS transitions.

Onboard EV Chargers

Renewable Energy Inverters

Use Scenario: DC-link switching stage in 11 kW bidirectional OBC handling both AC/DC and DC/AC conversion.

IC Role / Device Role / Timing Role: Bidirectional power switch in dual-active-bridge (DAB) topology, conducting up to 223 A in reverse diode mode.

Use Value: 223 A continuous diode current rating and 1406 mJ E_AS ensure safe operation during grid fault conditions and regenerative braking surges.

Use Scenario: MPPT boost stage in 10 kW string inverters interfacing PV arrays with 100–120 V DC input.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter, operating at 100 kHz with 50 % duty cycle.

Use Value: Stable R_DS(on) across –40 °C to 175 °C ensures consistent efficiency across outdoor ambient extremes and solar thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW70N120K5	1200 V, 70 A, TO-247 package, R_DS(on) = 22 mΩ - higher voltage rating but 11× higher on-resistance	Targeted at 600–1200 V systems (e.g., solar string inverters); unsuitable for 48–96 V high-current designs	Select only if system requires >600 V blocking; not drop-in due to voltage/current mismatch and package incompatibility
IXFH50N120P	1200 V, 50 A, TO-247, R_DS(on) = 32 mΩ - significantly higher R_DS(on), lower current, no Q_rr optimization	Designed for snubberless switching in medium-frequency industrial UPS; lacks low-Q_rr body diode	Not suitable for high-frequency, high-di/dt applications where Q_rr and FOM are critical

Compared with STW70N120K5 and IXFH50N120P, IPF019N12NM6ATMA1 delivers 11× lower R_DS(on) and 10× higher continuous current in a surface-mount package, making it uniquely suited for compact, high-efficiency 120 V industrial power stages - whereas alternatives serve higher-voltage, lower-current niches with different thermal and layout constraints.

Availability

IPF019N12NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, onboard EV chargers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPF019N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 6 family - engineered for high-current, high-frequency industrial power conversion, emphasizing low FOM, rugged avalanche performance, and thermally efficient packaging for demanding embedded power systems.

FAQ

What is the maximum continuous drain current for IPF019N12NM6ATMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 195 A with V_GS = 10 V, per Table 2 of the datasheet. This reflects thermal derating from the 254 A rating at 25 °C, maintaining safe junction temperature limits under sustained high-power operation.

Does IPF019N12NM6ATMA1 support gate drive voltages below 10 V?

Yes - it is specified for V_GS = 8 V operation, delivering R_DS(on) ≤ 2.23 mΩ at I_D = 50 A. Gate threshold voltage ranges from 2.6 V to 3.6 V, enabling reliable enhancement-mode turn-on with standard 8 V logic or level-shifted gate drivers.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves Q_rr = 336 nC at 1000 A/µs - approximately 40–60 % lower than typical Gen 5 silicon MOSFETs - due to optimized carrier lifetime control. This results in lower turn-on loss, reduced voltage overshoot, and improved EMI behavior in synchronous rectification and freewheeling applications.

Is the drain tab electrically isolated from other pins in the PG-TO263-7 package?

No - the exposed drain tab is electrically connected to Pin 4 and forms the primary drain terminal. It must be soldered to a dedicated, isolated copper pour on the PCB serving as both thermal interface and high-current drain path; no insulation layer is required or recommended beneath the tab.

IPF019N12NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPF019N12NM6ATMA1 FAQ

1.How can I place an order for IPF019N12NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF019N12NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF019N12NM6ATMA1 reliable?

The price and inventory of IPF019N12NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF019N12NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPF019N12NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF019N12NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF019N12NM6ATMA1?

IPF019N12NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF019N12NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF019N12NM6ATMA1?

For technical support, including IPF019N12NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF019N12NM6ATMA1 requirements.

6.How does Aetrix verify that IPF019N12NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF019N12NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF019N12NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPF019N12NM6ATMA1?

All IPF019N12NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF019N12NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF019N12NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPF019N12NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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