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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF05N03LAG

Name: IPF05N03LAG
Brand: Infineon Technologies
SKU: IPF05N03LAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF05N03LAG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPF05N03LAG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPF05N03LAG from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-23 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 100 °C, and 5.1 mΩ R_DS(on) (max) at V_GS = 10 V. It delivers high-frequency switching performance in synchronous buck converters and motor drive half-bridges.

For engineers reviewing the IPF05N03LAG datasheet, IPF05N03LAG pinout, IPF05N03LAG application, or IPF05N03LAG equivalent, key selection criteria include its 4.2–5.1 mΩ R_DS(on) at 10 V gate drive, 19–25 nC total gate charge, 1.6 K/W junction-to-case thermal resistance, and 175 °C maximum operating temperature.

Technical Context

This OptiMOS®2 device uses a trench-gate silicon process optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling efficient operation in 300–1000 kHz DC/DC converters. Its logic-level threshold (V_GS(th) = 1.2–2.0 V) supports direct 3.3 V or 5 V microcontroller gate driving without level-shifting.

The integrated body diode exhibits 0.91–1.2 V forward voltage at 50 A and 25 °C, with 10 nC reverse recovery charge under 400 A/µs di/dt - critical for minimizing shoot-through losses in synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 3.3 V/5 V logic-supplied systems and 12 V input rails.
R_DS(on) max	5.1 mΩ at V_GS = 10 V - Enables <1.3 W conduction loss at 50 A, reducing heatsink requirements.
Q_g	19–25 nC - Low total gate charge supports fast switching with moderate gate driver strength (e.g., TC4427).
I_D cont	50 A at T_C = 100 °C - Sustains high-current loads in compact PCB layouts with adequate copper area.
R_thJC	1.6 K/W - Allows precise junction temperature estimation using case temperature measurement in thermal design.
T_j max	175 °C - Supports operation in high-ambient environments such as automotive engine compartments or industrial motor drives.

Pinout & Package

IPF05N03LAG is housed in PG-TO252-3-23 (D-Pak variant), featuring exposed drain pad for thermal conduction and standard 3-pin layout: Gate (G), Drain (D), Source (S). The package complies with JEDEC MO-247 and supports surface-mount reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤±20 V drive; 1 Ω typical gate resistance limits ringing.
Pin 2 (D)	Drain terminal	Main high-side or low-side switch node; connected to large copper pour for thermal dissipation.
Pin 3 (S)	Source terminal	Reference node for gate drive; tied to power ground or floating source in high-side configuration.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V enables direct drive from 3.3 V MCUs without gate driver ICs.
Low FOM (Q_g × R_DS(on))	~100–130 nC·mΩ - balances switching loss and conduction loss in high-frequency SMPS.
Enhanced avalanche ruggedness	E_AS = 300 mJ (I_D = 45 A) - withstands inductive energy during hard-switching fault conditions.
High dv/dt immunity	6 kV/µs - suppresses false turn-on in noisy half-bridge environments with fast voltage transients.

Applications

Server VRM Power Stage

Automotive Body Control Module

Use Scenario: High-efficiency 12 V → 1.2 V point-of-load conversion for CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter with 500 kHz–1 MHz switching frequency.

Use Value: 5.1 mΩ R_DS(on) and 25 nC Q_g reduce both conduction and switching losses, improving VRM efficiency by ≥1.2% at 40 A load.

Use Scenario: Load switching for LED headlamps, HVAC actuators, and window lift motors.

IC Role / Device Role / Timing Role: Low-side power switch controlled by 5 V automotive MCU with PWM dimming capability.

Use Value: 175 °C rating and 50 A current capability ensure reliable operation across -40 °C to +125 °C ambient with minimal derating.

Industrial BLDC Motor Inverter

Telecom DC/DC Brick

Use Scenario: Half-bridge leg in 24 V/48 V brushless DC motor drives for fans and pumps.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with 20 kHz PWM and active freewheeling via body diode.

Use Value: 0.91 V V_SD and 10 nC Q_rr minimize reverse recovery loss and EMI during commutation.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom brick with >94% efficiency target.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET replacing Schottky diode in forward or LLC topology.

Use Value: 1.6 K/W R_thJC enables thermal coupling to heatsink through PCB, maintaining T_j < 125 °C at full 50 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 4.8 mΩ @ 4.5 V; Q_g = 22 nC; TO-252 package	Lower gate threshold (0.7–1.3 V) improves 3.3 V drive margin but increases leakage at high T_j	Prefer when driving from 3.3 V only and thermal margin is constrained.
STL130N5LF6AG	R_DS(on) = 3.8 mΩ @ 4.5 V; Q_g = 34 nC; PowerFLAT 5x6 package	Higher gate charge increases switching loss; smaller footprint reduces thermal mass	Prefer when board space is limited and switching frequency < 300 kHz.

Compared with IRLHS6242PBF and STL130N5LF6AG, IPF05N03LAG offers superior thermal resistance (1.6 K/W vs. ≥2.2 K/W) and tighter R_DS(on) tolerance at 10 V drive, making it optimal for thermally demanding, medium-frequency synchronous rectification.

Availability

IPF05N03LAG is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, industrial BLDC inverters, and telecom DC/DC bricks requiring stable component supply and long-term lifecycle support.

Supply support for IPF05N03LAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

IPF05N03LAG belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency DC/DC conversion where low R_DS(on) and low gate charge must coexist without thermal compromise.

FAQ

What is the maximum safe gate-source voltage for IPF05N03LAG?

The absolute maximum V_GS is ±20 V per datasheet Rev. 2.2. Operation above ±16 V risks oxide degradation over time; recommended gate drive is 0 V to 10 V for logic-level compatibility and reliability. Exceeding 20 V even briefly may cause irreversible gate oxide breakdown.

Can IPF05N03LAG be used in high-side switch configurations?

Yes - its logic-level threshold and 25 V V_DS rating allow use in high-side configurations with appropriate gate driver (e.g., bootstrap or isolated supply). However, the body diode is not optimized for reverse conduction; external freewheeling path is recommended in inductive loads.

How does the 175 °C rating impact thermal design compared to 150 °C MOSFETs?

The 175 °C T_j,max extends usable thermal headroom by 25 °C, permitting higher ambient temperatures or reduced heatsinking. For example, at 100 °C ambient, junction temperature remains within spec up to ~110 W power dissipation (vs. ~75 W for 150 °C-rated equivalents), assuming identical R_thJC.

Is the 5.1 mΩ R_DS(on) guaranteed at 4.5 V gate drive?

No - the 5.1 mΩ value is specified at V_GS = 10 V. At 4.5 V, R_DS(on) is 6.7–8.4 mΩ (SMD version). Designers must verify conduction loss at actual gate voltage; 4.5 V operation yields ~65% higher on-resistance than 10 V, increasing I²R loss significantly at high current.

IPF05N03LAG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-23

IPF05N03LAG FAQ

1.How can I place an order for IPF05N03LAG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF05N03LAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF05N03LAG reliable?

The price and inventory of IPF05N03LAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF05N03LAG is usually 5 days.

3.What payment methods are accepted for IPF05N03LAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF05N03LAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF05N03LAG?

IPF05N03LAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF05N03LAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF05N03LAG?

For technical support, including IPF05N03LAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF05N03LAG requirements.

6.How does Aetrix verify that IPF05N03LAG is sourced from the original manufacturer or authorized distributors?

All IPF05N03LAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF05N03LAG meets industry standards.

7.What is the process for return or replacement of IPF05N03LAG?

All IPF05N03LAG units undergo pre-shipment inspection (PSI). If there is an issue with IPF05N03LAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF05N03LAG part is unused and in its original packaging.

Return procedure for IPF05N03LAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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