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Infineon Technologies IPF05N03LA G
- Part No.:
- IPF05N03LA G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPF05N03LA G.pdf
- Description:
- MOSFET N-CH 25V 50A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,102
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Product details
Overview
IPF05N03LA G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-23 package, rated for 25 V VDS, 50 A continuous drain current at TC = 100 °C, and 5.1 mΩ RDS(on) (max) at VGS = 10 V. It features low gate charge (Qg = 19–25 nC), 175 °C operating temperature, and is optimized for high-frequency DC/DC converters in server VRMs and POL modules.
For engineers reviewing the IPF05N03LA G datasheet, IPF05N03LA G pinout, IPF05N03LA G application, or IPF05N03LA G equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 6.7–8.4 mΩ RDS(on) at 4.5 V, 2413–3110 pF Ciss, 1.6 K/W RthJC, and integrated body diode with 10 nC Qrr for synchronous rectification.
Technical Context
This MOSFET employs trench-based OptiMOS®2 technology to achieve a low figure-of-merit (gate charge × RDS(on)) for high-efficiency switching. Its gate threshold voltage (1.2–2.0 V typ.) enables robust turn-on with standard 3.3 V or 5 V logic drivers.
The device integrates a fast-recovery body diode (Qrr = 10 nC, trr < 50 ns) and supports high dv/dt immunity (6 kV/µs), making it suitable for hard-switched synchronous buck stages where reverse recovery loss minimization is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 12 V input bus and 5 V output POL systems. |
| RDS(on) max @ VGS=10 V | 5.1 mΩ - Enables ≤125 mW conduction loss at 50 A, reducing thermal load on PCB copper area. |
| ID continuous @ TC=100 °C | 50 A - Sustains full-rated current without derating in compact heatsinked designs. |
| Qg total | 19–25 nC - Low gate drive energy reduces driver IC power dissipation and EMI during 500 kHz–1 MHz switching. |
| RthJC | 1.6 K/W - Enables direct thermal path to heatsink; junction-to-case delta-T = 80 K at 50 W dissipation. |
| Qrr | 10 nC - Minimizes reverse recovery loss and shoot-through risk in synchronous FET position. |
| Tj max | 175 °C - Supports operation in thermally constrained environments like sealed server chassis. |
Pinout & Package
IPF05N03LA G uses the PG-TO252-3-23 (D-Pak) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Accepts logic-level drive (3.3 V/5 V); 1 Ω internal gate resistance limits ringing. |
| Pin 2 (Drain) | High-side switch node | Exposed metal tab - must be soldered to ≥6 cm² copper pour for RthJA = 50 K/W. |
| Pin 3 (Source) | Reference node for gate drive | Connected to power ground plane; low-inductance layout essential for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.2–2.0 V enables direct interface with microcontroller GPIO or PWM controller outputs. |
| Low RDS(on) × Qg FOM | ~100 mΩ·nC - balances conduction and switching losses for >95% efficiency in 500 kHz buck converters. |
| 175 °C rated junction | Allows sustained operation under transient overload or airflow-limited conditions without thermal shutdown. |
| JEDEC-qualified reliability | Qualified per J-STD-20/JESD22 - validated for reflow, humidity, and temperature cycling in industrial-grade applications. |
Applications
| Server Point-of-Load Converter | Industrial DC/DC Module |
|---|---|
Use Scenario: High-density 12 V input to 1.2 V/60 A output VRM in rack-mounted servers. IC Role / Device Role / Timing Role: Synchronous high-side FET in interleaved buck stage, switching at 800 kHz. Use Value: 5.1 mΩ RDS(on) and 10 nC Qrr reduce total power loss by 1.8 W vs. legacy MOSFETs, lowering thermal design margin. | Use Scenario: Isolated 24 V to 5 V/20 A DC/DC converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Primary-side active clamp switch in resonant topology, operating at 300–500 kHz. Use Value: 175 °C rating and 1.6 K/W RthJC ensure stable operation under 70 °C ambient with no forced air cooling. |
| Automotive Body Control Module | Telecom Rectifier Unit |
Use Scenario: 12 V battery-fed 3.3 V/5 A auxiliary rail for MCU and CAN transceivers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck converter, driven by integrated controller. Use Value: Logic-level gate enables direct drive from 3.3 V controller; 6.7 mΩ RDS(on) @ 4.5 V minimizes dropout under cold-crank (6.5 V min). | Use Scenario: 48 V to 12 V/30 A intermediate bus converter in 4G/5G base station power shelf. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in phase-shifted full-bridge topology. Use Value: 2413 pF Ciss and 112 pF Crss enable precise timing control and reduced cross-conduction loss at 200–350 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD05N03LA G | Same die, PG-TO252-3-11 package with different leadframe geometry; RthJC identical, but slightly higher RDS(on) tolerance band. | Identical electrical specs; preferred where standard TO252 footprint is required over variant leadform. | Select when board layout uses standard D-Pak land pattern (IEC 60130-10 compliant). |
| IRLHS6342TRPBF | 20 V VDS, 6.5 mΩ RDS(on) @ 4.5 V, 12 nC Qg; smaller PQFN 3×3 mm package. | Better suited for space-constrained consumer DC/DC; lower voltage rating excludes 12 V bus use. | Choose only for 5 V input systems where footprint reduction outweighs 25 V headroom requirement. |
Compared with IPD05N03LA G, IPF05N03LA G offers identical silicon performance in a leadform-optimized package for automated assembly, while IRLHS6342TRPBF trades voltage margin and thermal capability for miniaturization-making it unsuitable for server or industrial 12 V bus applications.
Availability
IPF05N03LA G is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, automotive body control units, and telecom rectifier units requiring stable component supply and long-term lifecycle support.
Supply support for IPF05N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS®2 power transistor family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure.
FAQ
Is IPF05N03LA G suitable for synchronous rectification in a 48 V to 12 V buck converter?
Yes. With 10 nC Qrr, 5.1 mΩ RDS(on) at 10 V, and 6 kV/µs dv/dt immunity, it meets key requirements for secondary-side synchronous FETs in 48 V input buck converters operating up to 350 kHz. Its 175 °C rating also supports high ambient conditions typical in telecom rectifiers.
What is the recommended PCB layout for thermal performance?
Mount the exposed drain pad directly to ≥6 cm² of 70 µm thick copper on FR4 (40 mm × 40 mm), using multiple thermal vias to inner ground planes. Maintain ≥0.5 mm clearance between gate trace and high-dv/dt nodes. Keep source loop inductance below 1.5 nH for stable 800 kHz switching.
Does IPF05N03LA G require a gate resistor for EMI suppression?
A 2.2–4.7 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET Ciss/Crss interaction. This improves EMI compliance without significantly increasing switching loss-verified in Infineon's reference design AN2015-07 for 500 kHz POL converters.
Can IPF05N03LA G replace IPD05N03LA G in existing designs?
Yes, with mechanical verification. Both share identical die, RDS(on), Qg, and thermal specs. IPF05N03LA G uses PG-TO252-3-23 (variant leadform), so check solder paste stencil and pick-and-place nozzle compatibility. Electrical behavior is interchangeable in all circuit configurations.
IPF05N03LA G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3110 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-23
IPF05N03LA G FAQ
1.How can I place an order for IPF05N03LA G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPF05N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPF05N03LA G reliable?
The price and inventory of IPF05N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF05N03LA G is usually 5 days.
3.What payment methods are accepted for IPF05N03LA G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF05N03LA G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPF05N03LA G?
IPF05N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPF05N03LA G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPF05N03LA G?
For technical support, including IPF05N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF05N03LA G requirements.
6.How does Aetrix verify that IPF05N03LA G is sourced from the original manufacturer or authorized distributors?
All IPF05N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF05N03LA G meets industry standards.
7.What is the process for return or replacement of IPF05N03LA G?
All IPF05N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPF05N03LA G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPF05N03LA G part is unused and in its original packaging.
Return procedure for IPF05N03LA G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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