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Infineon Technologies IPF06N03LA G
- Part No.:
- IPF06N03LA G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPF06N03LA G.pdf
- Description:
- MOSFET N-CH 25V 50A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,271
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Product details
Overview
IPF06N03LA G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-23 package, rated for 25 V VDS, 50 A continuous drain current at TC = 100 °C, and 5.7 mΩ max RDS(on) (SMD version). It delivers high-frequency switching performance in synchronous buck converters and motor drive half-bridges.
For engineers reviewing the IPF06N03LA G datasheet, IPF06N03LA G pinout, IPF06N03LA G application, or IPF06N03LA G equivalent, key selection criteria include gate charge (Qg = 17–22 nC), thermal resistance (RthJC = 1.8 K/W), avalanche energy (EAS = 225 mJ), and 175 °C maximum junction temperature.
Technical Context
This MOSFET employs trench-based OptiMOS®2 technology optimized for low gate charge × RDS(on) figure-of-merit (FOM), enabling high-efficiency operation in 300–1000 kHz dc/dc topologies. Its logic-level gate threshold (VGS(th) = 1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V microcontroller outputs.
Dynamic parameters-including Ciss = 2093–2653 pF, Qgd = 4.6–6.9 nC, and tr/tf < 12 ns-support fast, low-loss switching. The integrated body diode exhibits Qrr ≤ 10 nC and VSD ≤ 1.2 V at 50 A, suitable for synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) max (VGS = 4.5 V) | 9.6 mΩ - Enables ≥95% efficiency in 12 V input buck converters at 30 A load |
| ID continuous (TC = 100 °C) | 50 A - Sustains full-rated current with standard heatsinking on FR4 PCB |
| Qg total | 17–22 nC - Determines gate driver power loss and minimum achievable switching frequency |
| EAS | 225 mJ - Withstands single-pulse inductive energy without failure in motor drive freewheeling |
| Tj,max | 175 °C - Supports operation in sealed enclosures or high-ambient industrial environments |
| RthJC | 1.8 K/W - Enables direct thermal coupling to heatsink for high-power density designs |
Pinout & Package
IPF06N03LA G uses the PG-TO252-3-23 surface-mount package (D-Pak variant), featuring exposed drain pad for thermal conduction and mechanical stability. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives logic-level PWM signal; requires <22 nC charge for full turn-on |
| Pin 2 (Drain) | High-current output node | Connected to PCB copper area ≥6 cm² for thermal dissipation; electrically tied to tab |
| Pin 3 (Source) | Reference node / return path | Serves as local ground reference for gate drive; carries full load current |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - compatible with 3.3 V/5 V MCU GPIOs without level shifters |
| Low RDS(on) × Qg FOM | ~54 mΩ·nC - reduces combined conduction + switching losses in high-frequency SMPS |
| 175 °C rated junction | Enables derating-free operation up to ambient 125 °C in thermally constrained systems |
| Robust body diode | Qrr ≤ 10 nC and dv/dt ruggedness ≥6 kV/µs - supports reliable synchronous rectification |
| Pb-free & RoHS compliant | Meets EU Directive 2011/65/EU; SnAgCu lead plating enables lead-free reflow assembly |
Applications
| DC/DC Converter Switch | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load converter in telecom baseband cards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz with 3.3 V gate drive. Use Value: Achieves >96% peak efficiency due to 5.7 mΩ RDS(on) and low Qg-driven gate loss. | Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM frequency ≥20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge with fast turn-off (tf ≤ 6.9 ns) minimizing shoot-through risk. Use Value: Delivers 50 A continuous current while maintaining Tj < 150 °C under forced-air cooling. |
| Power Supply OR-ing | Hot-Swap Controller |
Use Scenario: Redundant 48 V input OR-ing in server power distribution units. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET replacing Schottky diodes to reduce forward drop. Use Value: Cuts conduction loss by 60% vs. 40 V Schottky, lowering thermal load and improving system MTBF. | Use Scenario: Inrush current limiting for 12 V board-level hot-swap modules in network switches. IC Role / Device Role / Timing Role: Main pass element controlled by external current-sense amplifier and comparator. Use Value: Withstands 350 A pulsed current during fault events and recovers without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 11.5 mΩ @ 4.5 V; Qg = 7.2 nC; TO-236 package | Lower current rating (4.3 A); suited for sub-10 A loads only | Select when board space is critical and current ≤5 A; not a drop-in replacement for 50 A use cases |
| STL110N3LLH6 | RDS(on) = 3.3 mΩ @ 4.5 V; Qg = 32 nC; PowerFLAT 5x6 package | Higher gate charge increases driver loss; superior RDS(on) benefits high-current steady-state | Prefer for ultra-low conduction loss at cost of higher switching loss and larger gate driver requirement |
Compared with IRLML6344TRPBF, IPF06N03LA G delivers 10× higher current capability and lower RDS(on); versus STL110N3LLH6, it trades 1.7× lower Qg for 1.7× higher RDS(on), favoring high-frequency, medium-current applications over low-frequency, high-current ones.
Availability
IPF06N03LA G is available at Aetrix Electronics and suitable for high-frequency dc/dc converters, motor drive half-bridges, and hot-swap controllers requiring stable component supply across industrial, telecom, and embedded power designs.
Supply support for IPF06N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency power conversion in compact, thermally demanding applications such as server VRMs and brushless DC motor drives.
FAQ
What is the maximum safe operating voltage for IPF06N03LA G?
The absolute maximum drain-source voltage is 25 V, with no derating required up to Tj = 175 °C. Operation above 25 V risks avalanche breakdown even for short transients; design margin should maintain VDS ≤ 22 V in practice to ensure long-term reliability under switching stress.
Can IPF06N03LA G be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage range (1.2–2.0 V) and guaranteed RDS(on) at VGS = 4.5 V confirm full enhancement with 3.3 V logic, provided the GPIO can source/sink ≥10 mA peak current to charge the 22 nC gate capacitance within required timing.
How does the body diode performance compare to external Schottky diodes?
Its body diode has VSD ≤ 1.2 V at 50 A and Qrr ≤ 10 nC, outperforming typical 40 V Schottkys (VF ≈ 0.55 V but Qrr ≈ 0) in reverse recovery robustness, though with higher forward drop. Best used where dv/dt immunity and integration outweigh forward loss concerns.
Is thermal pad soldering required for rated current operation?
Yes - the datasheet specifies thermal performance assumes the drain pad is soldered to ≥6 cm² of 70 µm copper on FR4. Without this, RthJA degrades to 75 K/W, limiting continuous current to ~12 A at TA = 70 °C, far below the 50 A rating.
IPF06N03LA G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2653 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-23
IPF06N03LA G FAQ
1.How can I place an order for IPF06N03LA G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPF06N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPF06N03LA G reliable?
The price and inventory of IPF06N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF06N03LA G is usually 5 days.
3.What payment methods are accepted for IPF06N03LA G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF06N03LA G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPF06N03LA G?
IPF06N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPF06N03LA G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPF06N03LA G?
For technical support, including IPF06N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF06N03LA G requirements.
6.How does Aetrix verify that IPF06N03LA G is sourced from the original manufacturer or authorized distributors?
All IPF06N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF06N03LA G meets industry standards.
7.What is the process for return or replacement of IPF06N03LA G?
All IPF06N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPF06N03LA G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPF06N03LA G part is unused and in its original packaging.
Return procedure for IPF06N03LA G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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