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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF09N03LA G

Name: IPF09N03LA G
Brand: Infineon Technologies
SKU: IPF09N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF09N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPF09N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO252-3

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Product details

Overview

IPF09N03LA G from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency DC/DC converters, featuring 25 V V_DS, 8.6 mΩ R_DS(on) (SMD version, V_GS=10 V), 50 A continuous drain current at T_C=25 °C, and 175 °C maximum junction temperature - deployed in synchronous buck converters for server VRMs and telecom power supplies.

For engineers reviewing the IPF09N03LA G datasheet, IPF09N03LA G pinout, IPF09N03LA G application, or IPF09N03LA G equivalent, key selection criteria include gate charge (Q_g = 10–13 nC), thermal resistance (R_thJC = 2.4 K/W), reverse diode performance (V_SD = 0.97–1.2 V @ 50 A), and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This OptiMOS®2 device uses a trench-gate superjunction structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) critical for high-efficiency, high-switching-frequency operation. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) ensures full enhancement with 4.5 V control rails.

Thermal design is supported by a low junction-to-case resistance (2.4 K/W) and validated 175 °C operation, while its reverse diode exhibits fast recovery (Q_rr = 10 nC) and robust dv/dt immunity (6 kV/µs), making it suitable for hard-switched synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - rated blocking voltage for 12 V input bus applications with margin
R_DS(on) max	8.6 mΩ @ V_GS=10 V, SMD version - enables <1 W conduction loss at 50 A
Q_g	10–13 nC - determines gate drive power and switching speed in 300–1000 kHz converters
I_D continuous	50 A @ T_C=25 °C - limited by bondwire; actual chip capability is 67 A
R_thJC	2.4 K/W - allows direct heatsink mounting for thermal management without PCB copper area dependency
V_GS(th)	1.2–2.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers
Q_rr	10 nC - minimizes body-diode conduction loss and EMI during dead-time in synchronous FETs

Pinout & Package

IPF09N03LA G is housed in PG-TO252-3-23 package (leadless DPAK variant), with drain-connected tab for thermal and electrical integration. The three terminals are arranged in standard TO252 footprint for surface-mount assembly on FR4 PCBs with 6 cm² copper cooling area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or output rail in buck topology
Pin 2 (Gate)	Control input	Receives PWM signal; requires <13 nC charge for full 0→10 V transition
Pin 3 (Drain)	Power input/output node	Connected to high-side switch node or input bus; tab is electrically tied to drain

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with microcontroller GPIO and low-voltage gate drivers
Optimized FOM (R_DS(on) × Q_g)	~85 mΩ·nC - reduces combined conduction and switching losses in 500 kHz+ DC/DC stages
175 °C rated junction	Enables operation in sealed enclosures or high-ambient environments without derating
JEDEC-qualified reliability	Qualified per J-STD-020 and JESD22 - validated for reflow, humidity, and temperature cycling in production
Low Q_rr body diode	10 nC reverse recovery charge - suppresses shoot-through risk and improves light-load efficiency

Applications

Server VRM

Telecom DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, switching at 500–800 kHz with precise dead-time control.

Use Value: 8.6 mΩ R_DS(on) and 10–13 nC Q_g enable >95% efficiency at 50 A load while minimizing gate driver power consumption.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in 19-inch rack systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: 175 °C rating and 6 kV/µs dv/dt immunity ensure stable operation under transient overvoltage and high ambient temperatures.

Industrial PLC Power Supply

Automotive ADAS Camera Module PSU

Use Scenario: Non-isolated 24 V to 5 V/3.3 V point-of-load regulator powering I/O and communication interfaces.

IC Role / Device Role / Timing Role: Low-side switch in buck controller IC-integrated or discrete driver configuration.

Use Value: Logic-level threshold (1.2–2.0 V) guarantees turn-on with 3.3 V MCU outputs, eliminating level-shifter circuitry.

Use Scenario: Compact 12 V to 1.8 V/2.5 V power stage for image sensor and ISP in automotive camera ECU.

IC Role / Device Role / Timing Role: High-efficiency synchronous FET in space-constrained buck regulator operating at 1 MHz.

Use Value: PG-TO252-3-23 package provides 2.4 K/W R_thJC with minimal PCB area - critical for thermally dense ADAS modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD09N03LA G	PG-TO252-3-11 package; R_DS(on) = 8.8 mΩ (max) @ 10 V; same die, different leadframe	Identical electrical specs but higher R_thJA due to different thermal pad layout	Select when legacy board layout uses TO252-3-11 footprint and thermal path relies on PCB copper
IRLHS6342TRPBF	20 V V_DS, 6.5 mΩ R_DS(on) @ 4.5 V, 30 A I_D; Micro3™ package (smaller, lower capacitance)	Better low-V_GS performance but lower voltage rating and current capacity	Select for 5 V input systems requiring ultra-low Q_g (6.2 nC) and compact size, not for 12 V+ buses

Compared with IPD09N03LA G and IRLHS6342TRPBF, IPF09N03LA G uniquely balances 25 V rating, 50 A capability, and logic-level drive in a thermally optimized DPAK variant - making it optimal for 12–24 V industrial and telecom converters where both current and thermal headroom are critical.

Availability

IPF09N03LA G is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPF09N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®2 family, designed specifically for high-efficiency, high-frequency DC/DC conversion in enterprise and infrastructure power systems - emphasizing low FOM, thermal robustness, and logic-level compatibility.

FAQ

What is the maximum safe operating frequency for IPF09N03LA G in a synchronous buck converter?

IPF09N03LA G supports switching frequencies up to 1 MHz in well-designed layouts, based on its 10–13 nC total gate charge and 5.1 ns fall time. Real-world operation at 500–800 kHz is typical for 50 A loads, provided gate drive strength exceeds 2 A peak and PCB parasitics are minimized to avoid ringing.

Does IPF09N03LA G require a gate resistor, and if so, what value is recommended?

A gate resistor of 2.7 Ω is used in the datasheet's switching characterization (t_d(off), t_f). For most 500 kHz applications, 2.2–4.7 Ω balances switching speed and gate driver stress. Lower values (<2 Ω) increase EMI risk; higher values (>10 Ω) degrade efficiency via prolonged transition times.

Can IPF09N03LA G be used as a replacement for IPD09N03LA G in existing designs?

Yes - both share identical die, R_DS(on), Q_g, and thermal specs. The only difference is package variant: IPF09N03LA G uses PG-TO252-3-23 (enhanced thermal pad), while IPD09N03LA G uses PG-TO252-3-11. Mechanical fit must be verified, but electrical performance is interchangeable.

Is the body diode suitable for continuous freewheeling in non-synchronous configurations?

Yes - the integrated Schottky-like body diode supports 50 A continuous forward current (I_S) and 350 A pulsed current (I_S,pulse). However, V_SD = 0.97–1.2 V at 50 A means ~50 W conduction loss, so synchronous operation is strongly preferred for efficiency-critical designs.

IPF09N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-23

IPF09N03LA G FAQ

1.How can I place an order for IPF09N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF09N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF09N03LA G reliable?

The price and inventory of IPF09N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF09N03LA G is usually 5 days.

3.What payment methods are accepted for IPF09N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF09N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF09N03LA G?

IPF09N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF09N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF09N03LA G?

For technical support, including IPF09N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF09N03LA G requirements.

6.How does Aetrix verify that IPF09N03LA G is sourced from the original manufacturer or authorized distributors?

All IPF09N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF09N03LA G meets industry standards.

7.What is the process for return or replacement of IPF09N03LA G?

All IPF09N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPF09N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF09N03LA G part is unused and in its original packaging.

Return procedure for IPF09N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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