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Infineon Technologies IPF10N03LA G
- Part No.:
- IPF10N03LA G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPF10N03LA G.pdf
- Description:
- MOSFET N-CH 25V 30A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,350
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Product details
Overview
IPF10N03LA G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-23 package, rated for 25 V VDS, 30 A continuous drain current at TC = 100 °C, and 10.4 mΩ RDS(on) at VGS = 10 V. It delivers high-frequency switching performance in dc/dc converters with 8.2–11 nC total gate charge and 175 °C maximum junction temperature.
For engineers reviewing the IPF10N03LA G datasheet, IPF10N03LA G pinout, IPF10N03LA G application, or IPF10N03LA G equivalent, key selection criteria include its low gate charge × RDS(on) figure-of-merit (FOM), robust avalanche energy rating (80 mJ), and JEDEC-qualified reliability for industrial power stages.
Technical Context
This MOSFET employs a trench-based OptiMOS®2 process optimized for logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V) and fast switching dynamics-evidenced by tr = 4.8–7.2 ns and tf = 2.8–4.2 ns under standard test conditions. Its thermal resistance RthJC = 2.9 K/W enables high-power density mounting on minimal PCB copper area.
The integrated body diode supports synchronous rectification with Qrr = 10 nC and VSD = 0.93–1.2 V at IF = 30 A, while reverse dv/dt immunity of 6 kV/µs ensures robust operation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margin |
| RDS(on) max | 10.4 mΩ at VGS = 10 V, ID = 30 A - Enables <1 W conduction loss at 30 A, critical for thermally constrained DC-DC phases |
| Qg | 8.2–11 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in POL converters |
| EAS | 80 mJ - Single-pulse avalanche capability supports unclamped inductive turn-off in buck or half-bridge configurations |
| Tj,max | 175 °C - Extended temperature rating allows operation in sealed enclosures or high-ambient industrial environments |
| RthJC | 2.9 K/W - Confirmed thermal path from die to case enables accurate junction temperature prediction using case temperature measurement |
Pinout & Package
IPF10N03LA G uses the PG-TO252-3-23 surface-mount package (D-Pak variant), with drain-connected tab for direct PCB thermal coupling and three leads: Gate, Source, Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Gate | Logic-level control input; requires ≤10 V drive for full enhancement; low Ciss = 1021–1358 pF minimizes Miller effect |
| Pin 2 (Middle) | Source | Reference node for gate drive and current sensing; tied to power ground in high-side or low-side switch layouts |
| Pin 3 (Right) + Tab | Drain | Main power output terminal; tab is electrically connected to drain and serves as primary thermal interface to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| Optimized FOM (Qg × RDS(on)) | ~85–114 nC·mΩ - Directly improves efficiency in high-frequency switching applications like point-of-load regulators |
| JEDEC qualification | Qualified per J-STD-20/JESD22 - Validated for reflow soldering and long-term reliability in automotive and industrial production |
| Enhanced dv/dt immunity | 6 kV/µs - Prevents false turn-on during fast voltage transients in bridge-leg or motor-drive circuits |
| Pb-free & RoHS compliant | Lead plating meets EU RoHS Directive 2011/65/EU - Supports environmentally regulated manufacturing without exemption requests |
Applications
| High-Frequency DC-DC Converter | Synchronous Buck Regulator |
|---|---|
Use Scenario: Primary switch in 500 kHz–2 MHz non-isolated buck converter powering FPGA core voltage. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated gate driver IC with 5 V logic-compatible output. Use Value: 10.4 mΩ RDS(on) and 8.2–11 nC Qg jointly reduce both conduction and switching losses below 1.2 W at 30 A, enabling compact heatsinkless design. | Use Scenario: Low-side synchronous rectifier in 12 V input, 1.2 V/40 A output VRM for server CPU power delivery. IC Role / Device Role / Timing Role: Fast-recovery body diode and low-RDS(on) channel replace external Schottky, driven complementarily with high-side switch. Use Value: VSD = 0.93–1.2 V and Qrr = 10 nC minimize reverse recovery loss and cross-conduction risk during dead-time transitions. |
| Industrial Motor Drive Half-Bridge | Hot-Swap Controller Load Switch |
Use Scenario: Upper-leg switch in 24 V BLDC inverter stage driving 300 W fan or pump load. IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET operated with bootstrap gate drive; handles repetitive avalanche during commutation. Use Value: EAS = 80 mJ and Tj,max = 175 °C ensure safe operation during short-circuit or phase reversal events without external snubbers. | Use Scenario: Inrush-limited main power switch in 24 V industrial PLC backplane with hot-plug capability. IC Role / Device Role / Timing Role: Low-RDS(on) load switch controlled via microcontroller GPIO with soft-start timing. Use Value: RDS(on) = 10.4 mΩ limits steady-state drop to <312 mV at 30 A, reducing heat generation and enabling single-layer PCB routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD10N03LA G | Same die, PG-TO252-3-11 package; RthJC identical but different leadframe geometry | Identical electrical specs; preferred where board layout accommodates alternate footprint | Select when existing PCB land pattern matches P-TO252-3-11 and thermal pad alignment differs |
| IPS10N03LA G | Same die, PG-TO251-3-11 package; leadless DPAK variant with same RDS(on) and Qg | Reduced mounting height (2.3 mm vs. 2.8 mm); slightly higher RthJA due to smaller thermal pad area | Choose for ultra-low-profile assemblies where vertical space is constrained and thermal budget permits |
Compared with IPD10N03LA G and IPS10N03LA G, the IPF10N03LA G offers identical silicon performance with optimized thermal interface geometry for mid-density PCBs-making it the preferred choice when balancing thermal performance, manufacturability, and mechanical clearance.
Availability
IPF10N03LA G is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, synchronous buck regulators, and industrial motor drive half-bridges requiring stable component supply and JEDEC-qualified reliability.
Supply support for IPF10N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The OptiMOS®2 product line delivers logic-level, low-RDS(on) power MOSFETs engineered specifically for high-efficiency, high-frequency switching in DC-DC conversion and motor control systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The IPF10N03LA G supports 30 A continuous drain current at TC = 100 °C, limited by bondwire capacity-not thermal saturation-as confirmed by Infineon's Safe Operating Area (SOA) curves and RthJC = 2.9 K/W specification. This rating holds under VGS ≥ 10 V and proper PCB copper thermal relief.
Does this MOSFET require a gate resistor for stability in high-speed switching?
A gate resistor (typically 2.7 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in hard-switched topologies. Infineon's reference test conditions use RG = 2.7 Ω for timing measurements, and the device's Ciss/Crss ratio supports stable operation with moderate gate resistance values.
Is the body diode suitable for synchronous rectification?
Yes-the integrated body diode has Qrr = 10 nC and VSD = 0.93–1.2 V at IF = 30 A and Tj = 25 °C, making it viable for synchronous rectification in buck converters up to ~2 MHz. Its fast recovery and low forward drop reduce conduction and switching losses relative to external Schottky diodes.
Can IPF10N03LA G be used in automotive applications?
While not AEC-Q101 qualified, the IPF10N03LA G is JEDEC-qualified (J-STD-20/JESD22) and rated for 175 °C operation-supporting under-hood industrial applications. For automotive-grade deployment, Infineon recommends AEC-Q101 variants such as the IPB10N03LA G in TO-263 package.
IPF10N03LA G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1358 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 52W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-23
IPF10N03LA G FAQ
1.How can I place an order for IPF10N03LA G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPF10N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPF10N03LA G reliable?
The price and inventory of IPF10N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF10N03LA G is usually 5 days.
3.What payment methods are accepted for IPF10N03LA G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF10N03LA G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPF10N03LA G?
IPF10N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPF10N03LA G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPF10N03LA G?
For technical support, including IPF10N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF10N03LA G requirements.
6.How does Aetrix verify that IPF10N03LA G is sourced from the original manufacturer or authorized distributors?
All IPF10N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF10N03LA G meets industry standards.
7.What is the process for return or replacement of IPF10N03LA G?
All IPF10N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPF10N03LA G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPF10N03LA G part is unused and in its original packaging.
Return procedure for IPF10N03LA G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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