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Infineon Technologies IPF13N03LA G
- Part No.:
- IPF13N03LA G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPF13N03LA G.pdf
- Description:
- MOSFET N-CH 25V 30A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:444
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Product details
Overview
IPF13N03LA G from Infineon Technologies is a 25 V, 30 A N-channel logic-level MOSFET in PG-TO252-3-23 package, featuring 12.8 mΩ RDS(on) at VGS = 10 V and 17.5 mΩ at 4.5 V, optimized for high-frequency DC/DC converters with 175 °C operation and JEDEC-qualified reliability.
For engineers reviewing the IPF13N03LA G datasheet, IPF13N03LA G pinout, IPF13N03LA G application, or IPF13N03LA G equivalent, key selection criteria include gate charge (Qg = 6.3–8.3 nC), thermal resistance (RthJC = 3.2 K/W), reverse diode performance (VSD = 0.95–1.2 V), and avalanche energy rating (EAS = 60 mJ).
Technical Context
This OptiMOS®2 power transistor uses planar trench technology to achieve low gate charge × RDS(on) figure-of-merit (FOM) and superior thermal resistance. Its logic-level gate enables direct drive from 3.3 V or 5 V controllers without level-shifting.
The device integrates a robust body diode with Qrr = 10 nC and dv/dt ruggedness of 6 kV/µs, supporting synchronous rectification and hard-switched topologies. It operates up to 175 °C junction temperature with ±20 V gate-source voltage rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for low-voltage synchronous buck stages |
| RDS(on) max | 12.8 mΩ at VGS = 10 V - Enables <1 W conduction loss at 30 A continuous drain current |
| ID continuous | 30 A at TC = 25 °C - Sustained output current capability with minimal heatsinking |
| Qg | 6.3–8.3 nC - Low total gate charge supports >1 MHz switching in compact DC/DC designs |
| RthJC | 3.2 K/W - Junction-to-case thermal resistance enables efficient heat transfer to PCB copper |
| EAS | 60 mJ - Single-pulse avalanche energy rating ensures robustness during transient overvoltage events |
| VGS(th) | 1.2–2.0 V - Logic-compatible threshold enables reliable turn-on with 3.3 V microcontrollers |
Pinout & Package
IPF13N03LA G is housed in PG-TO252-3-23 (D-Pak variant), a surface-mount package with exposed drain pad for thermal enhancement and mechanical stability on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or power return path in buck/synchronous rectifier |
| Pin 2 (Gate) | Control input | Logic-level driven node requiring <8.3 nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Drain) | Power output / high-side switch node | Exposed copper pad on bottom side; primary thermal path to PCB copper area (6 cm² recommended) |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V control systems |
| Optimized FOM (Qg × RDS(on)) | ~105 nC·mΩ - balances switching loss and conduction loss for high-efficiency 300 kHz–2 MHz converters |
| 175 °C rated junction temperature | Extended thermal margin for sealed or high-ambient industrial power supplies |
| JEDEC-qualified reliability | Complies with J-STD-20 and JESD22 - validated for reflow soldering and long-term stress in automotive-adjacent applications |
| Robust body diode | VSD ≤ 1.2 V at 30 A, Qrr = 10 nC - reduces reverse recovery loss in synchronous rectification |
Applications
| Point-of-Load Converter | USB-C PD Power Delivery |
|---|---|
Use Scenario: 5–20 V input, 3.3–12 V output buck regulator delivering up to 30 A in server VRMs or telecom modules. IC Role / Device Role / Timing Role: High-side synchronous FET in single-phase buck stage, switching at 500 kHz–1.2 MHz. Use Value: 12.8 mΩ RDS(on) and 6.3 nC Qg minimize combined conduction and switching losses, enabling >95% efficiency at full load. |
Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C PD adapter with variable 5–20 V output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller (e.g., Infineon IRS1168). Use Value: 0.95 V typical VSD and 10 nC Qrr reduce reverse recovery loss and improve light-load efficiency vs. Schottky alternatives. |
| Industrial Motor Drive Half-Bridge | LED Driver Constant-Current Stage |
Use Scenario: 24 V BLDC motor gate driver stage with integrated half-bridge and current sensing. IC Role / Device Role / Timing Role: Low-side switch in discrete half-bridge configuration, operated with 100 ns dead-time. Use Value: 6 kV/µs dv/dt immunity prevents false turn-on during fast voltage transients across motor windings. |
Use Scenario: Dimmable constant-current LED driver for architectural lighting with 12–48 V input. IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–5 kHz with 100% duty cycle capability. Use Value: 175 °C Tj,max and 30 A ID rating support sustained conduction without derating in enclosed fixtures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD13N03LA G | Same die, PG-TO252-3-11 package; RthJC identical but slightly higher Ciss (1043 pF vs. 1043 pF typ) | Identical electrical specs; preferred where standard TO252 footprint is required | Select when board layout uses standard D-Pak land pattern without modified thermal pad cutouts |
| IRLHS6342TRPBF | 20 V rating, 32 A, 9.5 mΩ @ 4.5 V, SO-8 package; lower voltage, smaller footprint, higher RDS(on) at 10 V | Better suited for space-constrained 12 V systems; not rated for 25 V bus transients | Choose only for ≤16 V nominal input applications where PCB area is critical and thermal budget allows higher RDS(on) |
Compared with IPD13N03LA G and IRLHS6342TRPBF, IPF13N03LA G uniquely combines 25 V rating, 3.2 K/W thermal resistance, and PG-TO252-3-23's enhanced thermal pad geometry-making it optimal for thermally demanding, medium-power DC/DC where voltage margin and heatsinkless operation are essential.
Availability
IPF13N03LA G is available at Aetrix Electronics and suitable for point-of-load converters, USB-C PD adapters, and industrial motor drive half-bridges requiring stable component supply and JEDEC-qualified reliability.
Supply support for IPF13N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, communications, and industrial power supplies.
FAQ
Is IPF13N03LA G suitable for 3.3 V gate drive?
Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed RDS(on) of 17.5 mΩ at VGS = 4.5 V, it achieves full enhancement using standard 3.3 V logic outputs. Gate drive strength must supply ≥8.3 nC to ensure sub-10 ns rise/fall times.
What is the maximum PCB copper area needed for thermal performance?
The datasheet specifies optimal thermal performance with 6 cm² of 70 µm thick copper on a 40 mm × 40 mm × 1.5 mm FR4 PCB. Using less than 50 cm² reduces RthJA from 75 K/W to 50 K/W, but RthJC remains fixed at 3.2 K/W regardless of PCB layout.
Does IPF13N03LA G have avalanche capability?
Yes. It is rated for 60 mJ single-pulse avalanche energy at ID = 24 A with RGS = 25 Ω. This capability supports non-clamped inductive switching in motor drives and protects against voltage spikes during hot-swap or load-dump events.
How does its body diode compare to external Schottky diodes?
Its body diode has VSD = 0.95–1.2 V at 30 A and Qrr = 10 nC - comparable to mid-performance Schottkys but with integrated layout, no extra footprint, and matched thermal expansion. It avoids reverse recovery snap-off issues common in fast Si diodes.
IPF13N03LA G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1043 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 46W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-23
IPF13N03LA G FAQ
1.How can I place an order for IPF13N03LA G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPF13N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPF13N03LA G reliable?
The price and inventory of IPF13N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF13N03LA G is usually 5 days.
3.What payment methods are accepted for IPF13N03LA G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF13N03LA G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPF13N03LA G?
IPF13N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPF13N03LA G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPF13N03LA G?
For technical support, including IPF13N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF13N03LA G requirements.
6.How does Aetrix verify that IPF13N03LA G is sourced from the original manufacturer or authorized distributors?
All IPF13N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF13N03LA G meets industry standards.
7.What is the process for return or replacement of IPF13N03LA G?
All IPF13N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPF13N03LA G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPF13N03LA G part is unused and in its original packaging.
Return procedure for IPF13N03LA G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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