Infineon Technologies IPFH6N03LA G

Overview

IPFH6N03LA G from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency DC/DC converters, featuring 25 V V_DS, 6 mΩ R_DS(on) (max, SMD version), 50 A continuous drain current at T_C=100 °C, and 175 °C maximum junction temperature. It delivers low gate charge × R_DS(on) figure-of-merit and superior thermal resistance (R_thJC = 2.1 K/W) for compact power stages in server VRMs and POL converters.

For engineers reviewing the IPFH6N03LA G datasheet, IPFH6N03LA G pinout, IPFH6N03LA G application, or IPFH6N03LA G equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 8.2–10.2 mΩ on-resistance at 4.5 V, 14–19 nC total gate charge, and PG-TO252-3-23 package thermal performance in high-density PCB layouts.

Technical Context

This device employs a trench-based OptiMOS®2 process to achieve low R_DS(on) with fast switching dynamics: C_iss = 1800–2390 pF, C_oss = 690–920 pF, and t_d(on)/t_r/t_d(off)/t_f = 6–9 / 5.4–8 / 23–34 / 4.2–6.3 ns under standard test conditions (V_DD=15 V, I_D=25 A, R_G=2.7 Ω).

Its integrated body diode supports synchronous rectification with Q_rr ≤ 10 nC (V_R=15 V, di_F/dt=400 A/µs) and V_SD = 0.93–1.2 V at I_F=50 A, T_j=25 °C, enabling efficient reverse recovery in buck and half-bridge topologies.

Key Specifications

Pinout & Package

IPFH6N03LA G uses the PG-TO252-3-23 surface-mount package: drain-connected tab (Pin 2), source (Pin 1), gate (Pin 3). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLHS6242PBF and SI7157DP-T1-GE3, IPFH6N03LA G offers the best balance of low R_DS(on), robust thermal performance, and avalanche capability-making it optimal for high-current, high-reliability 12–48 V DC/DC applications where both conduction and thermal margins are critical.

Availability

IPFH6N03LA G is available at Aetrix Electronics and suitable for server point-of-load converters, telecom DC/DC modules, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPFH6N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 power transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power supplies.

FAQ

Is IPFH6N03LA G suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage V_GS(th) of 1.2–2.0 V and full enhancement at V_GS ≥ 4.5 V, it is compatible with 3.3 V logic when driven through a buffer or gate driver IC that can swing to ≥4.5 V. Direct 3.3 V MCU drive yields partial enhancement and higher R_DS(on), so external level-shifting is recommended for optimal efficiency.

What is the maximum PCB copper area required for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area (one layer, 70 µm thick) on FR4 PCB, vertically mounted in still air. Using this layout achieves R_thJA = 50 K/W. Reducing copper area increases junction temperature; for example, minimal footprint yields R_thJA = 75 K/W, limiting continuous power dissipation to ~35 W at 25 °C ambient.

Does IPFH6N03LA G have avalanche rating for unclamped inductive switching?

Yes. It is rated for single-pulse avalanche energy E_AS = 150 mJ at I_D = 50 A and R_GS = 25 Ω. This rating is validated per JEDEC JESD22-A115 and supports reliable operation in hard-switched topologies where voltage spikes may exceed V_DS rating during turn-off.

How does the PG-TO252-3-23 package differ from PG-TO252-3-11 used in IPDH6N03LA G?

PG-TO252-3-23 features a modified leadframe geometry that improves thermal resistance and current handling versus PG-TO252-3-11. Both share identical pinout (drain-tab/source/gate), but the -23 variant has enhanced internal bondwire capacity and optimized die attach for lower R_thJC (2.1 K/W vs. 2.3 K/W typical for -11), supporting higher continuous current at same case temperature.