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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI020N06NAKSA1

Name: IPI020N06NAKSA1
Brand: Infineon Technologies
SKU: IPI020N06NAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI020N06NAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI020N06NAKSA1.pdf

Description:: MOSFET N-CH 60V 29A/120A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:3,416

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Product details

Overview

IPI020N06NAKSA1 from Infineon Technologies is an N-channel 60 V, 2.0 mΩ typ. R_DS(on) OptiMOS™ power MOSFET in PG-TO262-3 package, rated for 120 A continuous drain current at T_C = 25 °C and optimized for high-efficiency synchronous rectification in SMPS. It features 100% avalanche tested ruggedness, 420 mJ single-pulse E_AS, and 119 nC Q_OSS, enabling robust operation in high-frequency DC/DC converters.

For engineers reviewing the IPI020N06NAKSA1 datasheet, IPI020N06NAKSA1 pinout, IPI020N06NAKSA1 application, or IPI020N06NAKSA1 equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, fast switching with 106 nC total gate charge, thermal resistance of 0.7 K/W (junction-to-case), and JEDEC-qualified reliability for industrial power supplies.

Technical Context

This device employs a trench-based silicon MOSFET structure optimized for low conduction and switching losses in hard-switched and resonant topologies. Its gate threshold voltage (2.1–3.3 V) ensures stable turn-on under wide V_GS margin, while the 4.5 V gate plateau supports reliable synchronization in synchronous buck and LLC rectifier stages.

The integrated body diode exhibits 76–122 ns reverse recovery time and 97 nC Q_rr at 100 A, enabling efficient freewheeling with minimal voltage overshoot. Thermal design leverages the PG-TO262-3 package's low R_thJC (0.7 K/W) and compatibility with 6 cm² copper area on FR4 PCBs for sustained 214 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input DC/DC and PoE+ applications
R_DS(on) max	2.0 mΩ - Enables ≤240 mW conduction loss at 100 A, critical for >95% efficiency targets
I_D cont.	120 A @ T_C = 25 °C - Supports high-current output rails without forced air cooling
Q_G(0–10 V)	106 nC - Determines gate driver strength requirement for <50 ns switching transitions
E_AS	420 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive loads
Q_OSS	119 nC - Directly impacts turn-off loss and zero-voltage switching (ZVS) capability in resonant converters
R_thJC	0.7 K/W - Enables direct heatsink mounting for thermal management in compact power modules

Pinout & Package

Package: PG-TO262-3 - 3-pin through-hole package with isolated drain tab, optimized for high-current PCB mounting and thermal transfer to external heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires insulated mounting or direct heatsink contact for thermal performance
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing and accurate R_DS(on)-based current monitoring
Gate	Control terminal for channel modulation	High-impedance input requiring <2.4 Ω gate resistance to damp ringing and control dV/dt during switching

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_G/Q_OSS ratio (0.89) minimizes switching loss trade-off in high-frequency SMPS
100% avalanche tested	Guarantees single-pulse ruggedness up to 420 mJ, eliminating need for external snubbers in flyback designs
JEDEC-qualified reliability	Complies with J-STD-20 reflow and JESD22 stress testing for industrial temperature cycling (-55 to 175 °C)
Superior thermal resistance	R_thJC = 0.7 K/W enables 214 W power dissipation with minimal junction-to-heatsink delta-T
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for environmentally regulated end equipment

Applications

Server VRM

Industrial SMPS

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator racks with >600 A per rail.

IC Role / Device Role / Timing Role: Synchronous FET in multiphase buck converter, operating at 500 kHz–1 MHz with precise gate timing.

Use Value: 2.0 mΩ R_DS(on) reduces conduction loss by 35% vs. 3.2 mΩ alternatives, directly improving system efficiency and thermal footprint.

Use Scenario: 3 kW telecom rectifier with active PFC front-end and isolated LLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC transformer output, handling 100 A continuous current.

Use Value: 420 mJ E_AS rating withstands transient overloads during brown-out recovery without derating.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Bidirectional AC/DC conversion in 11 kW OBC with SiC primary and silicon secondary side.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved LLC half-bridge secondary, switching at 300–600 kHz.

Use Value: 119 nC Q_OSS enables ZVS down to 20% load, extending light-load efficiency beyond 94%.

Use Scenario: 5 kW string inverter with dual-stage topology: boost MPPT + full-bridge DC/AC inversion.

IC Role / Device Role / Timing Role: High-current switch in boost stage output rectification, conducting 120 A peak.

Use Value: 0.7 K/W R_thJC allows direct bolt-down heatsinking, reducing thermal interface layers and system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current synchronous rectification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB020N06N3 G	R_DS(on) max = 2.0 mΩ (same), but in PG-TO263-3 package with lower R_thJA (40 K/W vs. 62 K/W)	Better suited for surface-mount assembly and automated reflow; less suitable for high-power through-hole heatsinking	Select when PCB space constraints favor SMD layout and thermal path relies on large copper pour rather than mechanical heatsink
STL220N6F7	R_DS(on) max = 2.2 mΩ, Q_G = 115 nC, E_AS = 380 mJ - slightly higher conduction and switching loss	Qualified to AEC-Q101; preferred for automotive-grade OBC and traction inverter auxiliary supplies	Select when automotive qualification and extended temperature validation are mandatory, accepting minor efficiency trade-off

Compared with IPB020N06N3 G, IPI020N06NAKSA1 offers superior mechanical stability and thermal interface control via through-hole mounting; versus STL220N6F7, it delivers higher avalanche ruggedness and lower gate charge for non-automotive industrial SMPS where JEDEC compliance suffices.

Availability

IPI020N06NAKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability power systems.

Supply support for IPI020N06NAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 6th generation N-channel power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification and primary-side switching in enterprise and industrial power supplies.

FAQ

What is the maximum allowable gate-source voltage for IPI020N06NAKSA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation above +12 V or below –5 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between 0 V and 10 V, with 4.5 V gate plateau confirmed in gate charge waveforms.

Does IPI020N06NAKSA1 have an integrated Schottky diode?

No - it uses a planar silicon body diode inherent to the MOSFET structure, with V_SD = 0.9–1.2 V at 100 A and t_rr = 76–122 ns. It is not a Schottky or cascode device; its diode characteristics are fully characterized in the "Reverse Diode" section of the datasheet.

Can IPI020N06NAKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherently stable current sharing. Parallel operation requires matched gate drive loop inductance and Kelvin source connections to avoid oscillation; layout symmetry is critical for >200 A aggregate current.

What is the recommended PCB footprint for thermal performance?

The datasheet specifies a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² (single-layer, 70 µm thick) copper area for the drain connection, mounted vertically in still air. Minimum copper area must be ≥6 cm²; thermal vias under the drain tab are strongly recommended to enhance heat transfer to internal planes or heatsinks.

IPI020N06NAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 143µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI020N06NAKSA1 FAQ

1.How can I place an order for IPI020N06NAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI020N06NAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI020N06NAKSA1 reliable?

The price and inventory of IPI020N06NAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI020N06NAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI020N06NAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI020N06NAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI020N06NAKSA1?

IPI020N06NAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI020N06NAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI020N06NAKSA1?

For technical support, including IPI020N06NAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI020N06NAKSA1 requirements.

6.How does Aetrix verify that IPI020N06NAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI020N06NAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI020N06NAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI020N06NAKSA1?

All IPI020N06NAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI020N06NAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI020N06NAKSA1 part is unused and in its original packaging.

Return procedure for IPI020N06NAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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