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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI023NE7N3 G

Name: IPI023NE7N3 G
Brand: Infineon Technologies
SKU: IPI023NE7N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI023NE7N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI023NE7N3 G.pdf

Description:: MOSFET N-CH 75V 120A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI023NE7N3 G from Infineon Technologies is a 75 V, 120 A, 2.3 mΩ N-channel enhancement-mode power MOSFET in TO-262-3 (IPAK) package, optimized for high-efficiency DC-DC converters and motor control stages in industrial power supplies.

For engineers reviewing the IPI023NE7N3 G datasheet, IPI023NE7N3 G pinout, IPI023NE7N3 G application, or IPI023NE7N3 G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, peak pulsed drain current rating, thermal resistance (R_thJC), and avalanche ruggedness for unclamped inductive switching reliability.

Technical Context

This MOSFET employs Infineon's 7th-generation OptiMOS™ trench technology, delivering low conduction losses with a typical R_DS(on) of 2.3 mΩ at V_GS = 10 V and I_D = 80 A. It features 100% UIS-tested avalanche capability up to E_AS = 420 mJ at T_J = 25 °C.

The device supports gate threshold voltage (V_GS(th)) of 2.0–4.0 V and exhibits low gate charge (Q_G = 92 nC typ.) and output charge (Q_OSS = 220 nC typ.), enabling fast switching with reduced driver loss in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage suitable for 48 V bus systems with 20% overvoltage margin.
R_DS(on) max @ 10 V	2.7 mΩ - Ensures <1.7 W conduction loss at 80 A continuous drain current with adequate heatsinking.
I_D (continuous)	120 A - Rated for high-current synchronous rectification or half-bridge low-side switching.
E_AS	420 mJ - Confirmed single-pulse avalanche energy enables robust operation under inductive load turn-off stress.
R_thJC	0.55 K/W - Junction-to-case thermal resistance supports >100 W power dissipation with standard copper-clad heatsink mounting.
Q_G	92 nC - Gate charge value determines required driver peak current for <100 ns turn-on in 500 kHz SMPS designs.

Pinout & Package

Supplied in TO-262-3 (IPAK) package with isolated flange, featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be insulated from heatsink unless system-level grounding permits.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying high-side terminal	Electrically tied to package flange; requires insulating pad or isolated mounting when heatsink is grounded.
Source (Pin 1)	Reference node for gate drive and current return path	Low-inductance connection point for Kelvin source routing in high-di/dt applications.
Gate (Pin 2)	Control electrode for channel modulation	Requires <±20 V absolute rating; gate resistor selection critical to suppress ringing during 100+ A switching transitions.

Key Features

Feature	Design Value
OptiMOS™ 7th-gen trench process	Enables 2.3 mΩ R_DS(on) at 75 V while maintaining <100 V breakdown margin for field reliability.
100% UIS tested	Guarantees minimum 420 mJ avalanche energy per device-no screening waiver or statistical sampling.
Low Q_G/Q_OSS ratio	92 nC / 220 nC ratio improves hard-switching efficiency by reducing capacitive switching loss relative to gate drive effort.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D moisture sensitivity level 1 (MSL1) for unlimited floor life and reflow compatibility.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: 3-phase inverter stage in 5–15 kW servo drives operating at 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET inverter module handling 120 A peak phase current.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by 35% versus prior-gen 75 V MOSFETs, lowering heatsink size by one mechanical tier.

Use Scenario: High-density 48 V-to-12 V intermediate bus converter in AI accelerator rack power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter with 500 kHz switching and 80 A per phase.

Use Value: Low Q_OSS minimizes reverse recovery loss during dead-time commutation, improving full-load efficiency by 0.8%.

Telecom Rectifiers

EV Onboard Chargers

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch clamped at 75 V bus, conducting 100 A pulses with 10 µs on-time.

Use Value: Avalanche ruggedness ensures survival during transient overvoltage events caused by line surges or transformer leakage spikes.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-current freewheeling path during LLC resonant tank zero-voltage switching transitions.

Use Value: 0.55 K/W R_thJC allows direct bolt-down to aluminum cold plate, eliminating need for thermal interface material in compact OBC modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics STP120N75F7	R_DS(on) = 2.5 mΩ (typ.), Q_G = 105 nC, R_thJC = 0.65 K/W	Higher gate charge increases driver loss; slightly higher thermal resistance limits peak current in compact layouts.	Preferred where ST ecosystem compatibility or dual-sourcing with existing F7 designs is required.
Vishay SiHP12N75D	R_DS(on) = 2.8 mΩ (max), E_AS not specified, TO-220AB package	Lacks avalanche rating documentation; TO-220 thermal performance inferior to TO-262 for >80 A continuous operation.	Suitable only for non-avalanche-critical, lower-power (<5 kW) applications with generous thermal margin.

Compared with STP120N75F7 and SiHP12N75D, IPI023NE7N3 G delivers superior thermal performance and guaranteed avalanche ruggedness-critical for industrial inverters and telecom rectifiers where unclamped inductive switching is routine.

Availability

IPI023NE7N3 G is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPI023NE7N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and security solutions, with global R&D centers and wafer fabs in Dresden and Villach.

This part belongs to the OptiMOS™ 7th-generation N-channel power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial and computing power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for IPI023NE7N3 G?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. Recommended gate drive is +10 V to +15 V for optimal R_DS(on) and safe margin against Miller-induced turn-on during high-di/dt transitions.

Does IPI023NE7N3 G require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to dampen parasitic oscillation and limit peak gate current. For 120 A switching at 500 kHz, a 5–10 Ω non-inductive resistor is recommended, placed as close as possible to the gate pin to minimize loop inductance.

Can IPI023NE7N3 G be used in parallel configurations?

Yes, but requires matched gate drive layout, individual gate resistors, and symmetrical PCB copper pour to ensure current sharing. Thermal coupling via shared heatsink is essential; mismatched R_DS(on) or temperature gradients can cause >20% current imbalance above 85 °C junction temperature.

Is the TO-262-3 package of IPI023NE7N3 G electrically isolated?

No-the metal flange (Drain terminal) is not electrically isolated from the silicon die. An insulating thermal pad or ceramic washer must be used between flange and heatsink unless the heatsink is floating or intentionally tied to the Drain potential in the circuit design.

IPI023NE7N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 273µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 14400 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI023NE7N3 G FAQ

1.How can I place an order for IPI023NE7N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI023NE7N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI023NE7N3 G reliable?

The price and inventory of IPI023NE7N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI023NE7N3 G is usually 5 days.

3.What payment methods are accepted for IPI023NE7N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI023NE7N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI023NE7N3 G?

IPI023NE7N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI023NE7N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI023NE7N3 G?

For technical support, including IPI023NE7N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI023NE7N3 G requirements.

6.How does Aetrix verify that IPI023NE7N3 G is sourced from the original manufacturer or authorized distributors?

All IPI023NE7N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI023NE7N3 G meets industry standards.

7.What is the process for return or replacement of IPI023NE7N3 G?

All IPI023NE7N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPI023NE7N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI023NE7N3 G part is unused and in its original packaging.

Return procedure for IPI023NE7N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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