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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI024N06N3GXKSA1

Name: IPI024N06N3GXKSA1
Brand: Infineon Technologies
SKU: IPI024N06N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI024N06N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI024N06N3GXKSA1.pdf

Description:: MOSFET N-CH 60V 120A TO262-3

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Product details

Overview

IPI024N06N3GXKSA1 from Infineon Technologies is a 60 V, 100 A, 2.4 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (37 nC) and excellent thermal resistance (0.95 K/W junction-to-case). It operates at T_j ≤ 175 °C and supports unclamped inductive switching up to 100 mJ.

For engineers reviewing the IPI024N06N3GXKSA1 datasheet, IPI024N06N3GXKSA1 pinout, IPI024N06N3GXKSA1 application, or IPI024N06N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g and Q_gd values, safe operating area (SOA) limits, avalanche ruggedness, and TO-220 thermal performance under forced-air or heatsink mounting.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch for reduced specific on-resistance and improved switching efficiency. Its gate threshold voltage (V_GS(th)) is tightly distributed between 2.0 V and 3.0 V at 25 °C, enabling reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

The device features an integrated fast-recovery body diode with t_rr = 48 ns and Q_rr = 67 nC at I_F = 50 A, supporting synchronous rectification and ZVS operation. Its SOA is characterized for single-pulse operation up to 100 µs, with peak current limited by bondwire integrity and thermal runaway constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines use in 48 V bus systems and automotive 12/24 V battery-fed inverters.
R_DS(on) max @ V_GS = 10 V	2.4 mΩ - Confirmed at T_j = 25 °C; enables <1.2 W conduction loss at 70 A continuous DC current.
I_D continuous @ T_C = 25 °C	100 A - Limited by package bondwire and case temperature; requires ≥ 12 cm² 2 oz copper pad for rated current.
Q_g total	37 nC - Measured at V_DS = 30 V, V_GS = 10 V; determines gate driver power and switching speed in hard-switched topologies.
E_AS single-pulse	100 mJ - Rated at T_j = 25 °C, I_D = 50 A; supports robust unclamped inductive switching in motor phase-legs.
Z_thJC max	0.95 K/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for 120 W dissipation at ΔT = 114 K.
Q_gd/Q_g ratio	0.27 - Low Miller charge fraction; improves immunity to dv/dt-induced false turn-on in high-side configurations.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant). Mounting requires mechanical isolation from heatsink unless using insulating washer; drain connected to tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOS gate; requires series resistor (10–47 Ω) and gate driver capable of ±2 A peak current.
Pin 3 (Drain)	Power output / High-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
Optimized gate charge profile	Q_g = 37 nC, Q_gd = 10 nC - Enables 100 kHz+ switching in LLC resonant converters without excessive driver losses.
Low R_DS(on) × Q_g figure-of-merit	88.8 mΩ·nC - Balances conduction and switching losses for high-frequency SMPS designs targeting >96% efficiency.
Qualified per AEC-Q101	Stress-tested for automotive applications including temperature cycling, HTRB, and UIS - suitable for EPS, HVAC blowers, and ADAS power stages.
Enhanced avalanche ruggedness	E_AS = 100 mJ at T_j = 25 °C - Withstands repetitive inductive energy dump in motor drive freewheeling phases without parameter shift.

Applications

Automotive Electric Power Steering (EPS)

Industrial BLDC Motor Inverter

Use Scenario: Three-phase inverter driving 12 V or 48 V brushless DC motor in steering column assist unit.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack half-bridge configuration; synchronized with gate driver for PWM commutation at 10–20 kHz.

Use Value: 2.4 mΩ R_DS(on) reduces I²R losses during high-torque assist pulses; 100 mJ E_AS ensures reliability during sudden load reversals and regenerative braking events.

Use Scenario: 400 W–2 kW variable-speed drive for conveyor belt motors in packaging machinery.

IC Role / Device Role / Timing Role: High-current power switch in three-phase inverter stage; operated with space-vector PWM and active short-circuit protection.

Use Value: TO-220-3 package allows direct bolt-down heatsinking; low Q_gd/Q_g ratio prevents shoot-through during fast dv/dt transients in industrial EMI environments.

Server PSU Primary-Side Switch

Onboard Charger (OBC) DC-DC Stage

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for AI server rack power supply.

IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant switch operating at 300–700 kHz; driven by dedicated gate driver IC with adaptive dead-time control.

Use Value: 37 nC total gate charge minimizes driver power consumption; 0.95 K/W Z_thJC enables compact heatsink integration within tight airflow constraints.

Use Scenario: Isolated DC-DC stage in 3.3 kW bidirectional OBC converting 400 V battery to 12 V auxiliary rail.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch in phase-shifted full-bridge topology; subjected to repeated 100 A peak currents during charging cycles.

Use Value: 100 A I_D rating supports 3× peak overload capability; body diode Q_rr = 67 nC enables zero-voltage switching across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB021N06N3 G	R_DS(on) = 2.1 mΩ (lower), Q_g = 42 nC (higher), same PG-TO220-3 package	Better conduction loss but higher switching loss; requires stronger gate driver	Select when conduction loss dominates (e.g., low-frequency, high-duty-cycle operation)
IPP024N06N3 G	Same R_DS(on) and Q_g, but in PG-TO263-3 (D²PAK) surface-mount package	No through-hole mounting; better thermal performance with PCB copper area, unsuitable for manual assembly	Select when automated SMT production and enhanced thermal spreading are prioritized over serviceability

Compared with IPB021N06N3 G, IPI024N06N3GXKSA1 trades 0.3 mΩ higher R_DS(on) for 5 nC lower Q_g, reducing gate drive loss and improving high-frequency efficiency; versus IPP024N06N3 G, it offers identical electrical specs but enables field-replaceable through-hole mounting in legacy power modules.

Availability

IPI024N06N3GXKSA1 is available at Aetrix Electronics and suitable for automotive EPS systems, industrial BLDC inverters, server PSUs, and onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for IPI024N06N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-power-density, high-efficiency switching applications in automotive, industrial, and computing power supplies.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is 175 °C per the datasheet's "Operating and Storage Temperature Range" specification. Continuous operation at this limit requires derating I_D to ≤ 45 A and maintaining Z_thJC ≤ 0.95 K/W via adequate heatsinking and airflow. Thermal shutdown is not built-in; external monitoring is required for safety-critical systems.

Is the drain tab electrically isolated from the package leads?

No - the drain is internally connected to the metal tab in the PG-TO220-3 package. Pin 3 (drain) and the tab are at the same potential. Electrical isolation from the heatsink must be achieved using a mica or ceramic washer and non-conductive mounting hardware unless the system design intentionally references the heatsink to drain potential.

Does this MOSFET support logic-level gate drive?

It is not a logic-level device. The gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). Driving with only 3.3 V or 5 V results in R_DS(on) > 10 mΩ and unacceptable conduction loss; a dedicated gate driver delivering 10–15 V is mandatory for specified performance.

What is the recommended PCB layout for thermal performance?

Use ≥ 12 cm² of 2 oz copper connected directly to the drain tab via multiple thermal vias (≥ 8 × 0.3 mm diameter) to inner-layer ground or power planes. The source pad must be large and low-inductance, with short, wide traces to minimize loop inductance. Gate trace should be shielded and routed away from high-dv/dt nodes to prevent coupling.

IPI024N06N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 196µA

Gate Charge (Qg) (Max) @ Vgs:: 275 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 23000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI024N06N3GXKSA1 FAQ

1.How can I place an order for IPI024N06N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI024N06N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI024N06N3GXKSA1 reliable?

The price and inventory of IPI024N06N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI024N06N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI024N06N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI024N06N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI024N06N3GXKSA1?

IPI024N06N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI024N06N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI024N06N3GXKSA1?

For technical support, including IPI024N06N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI024N06N3GXKSA1 requirements.

6.How does Aetrix verify that IPI024N06N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI024N06N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI024N06N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI024N06N3GXKSA1?

All IPI024N06N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI024N06N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI024N06N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPI024N06N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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