Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI028N08N3GHKSA1

Name: IPI028N08N3GHKSA1
Brand: Infineon Technologies
SKU: IPI028N08N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPI028N08N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI028N08N3GHKSA1.pdf

Description:: MOSFET N-CH 80V 100A TO262-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,235

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPI028N08N3GHKSA1 from Infineon Technologies is an 80 V, 2.8 mΩ R_DS(on) N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, rated for 120 A continuous drain current at T_C = 25 °C and optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPI028N08N3GHKSA1 datasheet, IPI028N08N3GHKSA1 pinout, IPI028N08N3GHKSA1 application, or IPI028N08N3GHKSA1 equivalent, key selection criteria include its 2.8 mΩ on-resistance at V_GS = 10 V, 120 A I_D rating, 100% UIS-tested ruggedness, low gate charge (Q_g = 78 nC), and thermally enhanced HSOF-8 package with exposed drain pad.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology with trench-gate superjunction structure to achieve low conduction loss and fast switching performance. It features a fully characterized avalanche energy rating (E_AS = 490 mJ) and supports hard-switched operation up to 1 MHz in buck converters.

The MOSFET integrates a monolithic temperature sensor and exhibits tightly controlled threshold voltage (V_GS(th) = 2.0–3.0 V) and low gate-to-source leakage (<100 nA). Its thermal resistance R_thJC = 0.5 K/W enables high-power density designs without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V input bus architectures and 12 V output rails in intermediate bus converters.
R_DS(on) max @ V_GS = 10 V	2.8 mΩ - Enables <1.5 W conduction loss at 120 A, critical for >95% efficiency in high-current VRMs.
I_D continuous @ T_C = 25 °C	120 A - Supports single-phase CPU/GPU power stages up to 1.5 kW with minimal parallel devices.
Q_g	78 nC - Reduces gate drive power and allows use of low-cost drivers in high-frequency (>500 kHz) applications.
E_AS	490 mJ - Confirmed single-pulse avalanche capability ensures robustness against inductive switching transients in hard-switched topologies.
R_thJC	0.5 K/W - Enables direct heatsink mounting via exposed drain pad, supporting >100 W dissipation without thermal derating at 25 °C ambient.

Pinout & Package

Package: PG-HSOF-8 (Heat Sink Overlaid Flatlead), surface-mount, thermally enhanced with integrated copper clip and exposed drain pad for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Power Drain Connection	Internally paralleled drain terminals tied to exposed metal pad - provides <0.5 nH loop inductance and 90% of current path area via copper clip.
4 (Source)	Reference Node for Gate Drive	Low-inductance Kelvin source connection isolates power and signal return paths to minimize gate oscillation during fast dV/dt transitions.
8 (Gate)	Control Input	Standard MOSFET gate terminal; designed for 0–12 V logic-level drive with 78 nC total gate charge requiring <1.5 W driver power at 1 MHz.

Key Features

Feature	Design Value
100% UIS tested	Guarantees avalanche robustness across full operating temperature range without screening failure.
Optimized Q_g/R_DS(on) ratio	78 nC / 2.8 mΩ = 27.9 nC·mΩ - balances switching loss and conduction loss for 300–1000 kHz VRM operation.
Thermally enhanced HSOF-8	0.5 K/W R_thJC and 2.5× larger copper clip vs. standard SO-8 - reduces junction-to-case delta-T by 40% at 100 A.
Tight V_GS(th) distribution	2.0–3.0 V - enables precise gate drive timing control and stable turn-on behavior across production lots.

Applications

Server Voltage Regulator Module (VRM)

Telecom Intermediate Bus Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V input in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 500–800 kHz with 30 ns turn-on delay.

Use Value: 2.8 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ parts, enabling 1.2 kW per phase without liquid cooling.

Use Scenario: 48 V to 12 V isolated DC-DC converter in 5G base station power shelves with strict efficiency and thermal constraints.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology, conducting >100 A RMS with <100 ns reverse recovery tail.

Use Value: 490 mJ E_AS withstands transformer leakage inductance spikes, eliminating need for external snubbers and reducing BOM count by 2 components.

Industrial Motor Drive Inverter Stage

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter driving 5–10 kW permanent magnet motors in CNC machinery with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switch in three-leg inverter bridge, operating at 16 kHz PWM with 120 A peak phase current.

Use Value: 0.5 K/W R_thJC allows direct heatsink mounting and sustains 100% load at 70 °C ambient without fan derating.

Use Scenario: Boost PFC stage in 6.6 kW bi-directional OBC converting AC grid to 400 V DC bus for EV battery charging.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), handling 30 A RMS with 100 kHz switching frequency.

Use Value: 78 nC Q_g lowers gate driver losses by 42% vs. comparable 3.5 mΩ devices, improving system efficiency from 96.1% to 96.7% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB028N08N5	R_DS(on) = 2.8 mΩ @ V_GS = 10 V, but in TO-263-7 package with higher R_thJC = 0.75 K/W and no Kelvin source.	Larger footprint and higher thermal resistance limit usable current density in compact VRMs.	Preferred where board space permits and discrete heatsinking is available.
STL220N8F7	R_DS(on) = 2.2 mΩ but rated only to 80 V with lower UIS rating (E_AS = 280 mJ) and no 100% avalanche test.	Higher conduction efficiency but reduced ruggedness in hard-switched telecom converters with high dI/dt.	Consider when conduction loss dominates and transient stress is well-controlled via layout.

Compared with IPB028N08N5 and STL220N8F7, IPI028N08N3GHKSA1 uniquely combines ultra-low R_DS(on), industry-leading avalanche robustness, and thermally optimized HSOF-8 packaging-making it the preferred choice for space-constrained, high-reliability VRMs and telecom power systems demanding both efficiency and long-term field reliability.

Availability

IPI028N08N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drives requiring stable component supply and long-lifecycle support.

Supply support for IPI028N08N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and industrial power systems where thermal performance and switching reliability are critical.

FAQ

What is the maximum recommended gate drive voltage for IPI028N08N3GHKSA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operation at 12 V is permissible and improves R_DS(on) margin, while 15 V exceeds recommended limits and risks accelerated gate oxide degradation over time. Gate drive must remain within –5 V to +12 V for reliable long-term operation.

Does IPI028N08N3GHKSA1 require a negative gate turn-off voltage?

No, this MOSFET does not require negative gate turn-off. Its V_GS(th) range (2.0–3.0 V) and low Miller plateau ensure clean turn-off with 0 V gate drive. However, applying –2 V to –5 V during off-state improves noise immunity in high-dV/dt environments such as multi-phase VRMs with adjacent fast-switching nodes.

How is the exposed drain pad on the HSOF-8 package electrically connected?

The exposed drain pad is internally bonded to all drain terminals (pins 1–3 and 5–7) and serves as the primary current-carrying and thermal path. It must be soldered to a large PCB copper pour or heatsink using solder paste and reflow profile compatible with lead-free assembly. No electrical isolation is required-the pad is at drain potential and carries full load current.

Can IPI028N08N3GHKSA1 be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of R_DS(on) above 100 °C and tight V_GS(th) distribution. For stable current sharing, use matched gate resistors (±5%), identical PCB trace lengths, and Kelvin source connections. Derate total current by 15% per additional device beyond two to account for thermal coupling effects in dense layouts.

IPI028N08N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI028N08N3GHKSA1 FAQ

1.How can I place an order for IPI028N08N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI028N08N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI028N08N3GHKSA1 reliable?

The price and inventory of IPI028N08N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI028N08N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI028N08N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI028N08N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI028N08N3GHKSA1?

IPI028N08N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI028N08N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI028N08N3GHKSA1?

For technical support, including IPI028N08N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI028N08N3GHKSA1 requirements.

6.How does Aetrix verify that IPI028N08N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI028N08N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI028N08N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI028N08N3GHKSA1?

All IPI028N08N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI028N08N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI028N08N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPI028N08N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…