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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI029N06NAKSA1

Name: IPI029N06NAKSA1
Brand: Infineon Technologies
SKU: IPI029N06NAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI029N06NAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI029N06NAKSA1.pdf

Description:: MOSFET N-CH 60V 24A/100A TO262-3

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Product details

Overview

IPI029N06NAKSA1 from Infineon Technologies is an N-channel 60 V OptiMOS™ power MOSFET in PG-TO262-3 (I²-PAK) package, rated for 136 A continuous drain current at T_C = 25 °C, with R_DS(on) max of 2.9 mΩ at V_GS = 10 V and Q_g = 56 nC. It is 100% avalanche tested and optimized for high-efficiency synchronous rectification in server SMPS and telecom power supplies.

For engineers reviewing the IPI029N06NAKSA1 datasheet, IPI029N06NAKSA1 pinout, IPI029N06NAKSA1 application, or IPI029N06NAKSA1 equivalent, key selection criteria include thermal resistance (R_thJC = 0.7 K/W), low Q_oss (65 nC), robust 110 mJ single-pulse avalanche energy, and JEDEC-qualified reliability for industrial-grade power conversion designs.

Technical Context

This device employs trench-gate silicon technology to achieve ultra-low R_DS(on) while maintaining fast switching performance: t_d(on) = 17 ns, t_f = 8 ns, and C_iss = 4100 pF at V_DS = 30 V. Its gate plateau voltage is 4.8 V, enabling stable turn-on under high di/dt conditions in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.0 V at I_F = 100 A and T_j = 25 °C, with t_rr = 54 ns and Q_rr = 77 nC - characteristics critical for minimizing reverse recovery losses in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input bus architectures and 12 V/5 V secondary-side synchronous rectification.
R_DS(on), max	2.9 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 100 A, supporting high-current, low-voltage output rails.
I_D, cont	136 A at T_C = 25 °C - Supports high-power density designs where heatsinking is limited to PCB copper area or case mounting.
Q_g	56 nC - Low gate charge reduces driver power demand and enables efficient operation with standard gate drivers (e.g., IR2110, UCC27531).
E_AS	110 mJ - Confirmed single-pulse avalanche capability allows safe operation during transient overvoltage events without external clamping.
R_thJC	0.7 K/W - Enables direct thermal coupling to heatsink via exposed drain tab, critical for maintaining T_j < 150 °C in compact 1U server PSUs.
Q_oss	65 nC - Low output charge minimizes turn-off energy loss and improves light-load efficiency in resonant topologies.

Pinout & Package

Package: PG-TO262-3 (I²-PAK), with exposed drain tab for thermal and electrical connection. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; requires ≤20 V drive; gate resistance R_G = 1.3 Ω typical ensures stable switching without oscillation.
Pin 2 (Drain / Tab)	High-side power node	Exposed metal tab serves as primary drain connection and thermal path; must be soldered to PCB copper pour or heatsink for R_thJC = 0.7 K/W.
Pin 3 (Source)	Reference node	Provides return path for load current; connects to ground or low-side switch source; defines gate-to-source reference for drive circuitry.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_oss ratio (56/65 ≈ 0.86) and fast t_f (8 ns) reduce switching losses in high-frequency DC-DC converters.
100% avalanche tested	Guarantees minimum 110 mJ single-pulse E_AS, eliminating need for external snubbers in flyback or forward converter outputs.
Superior thermal resistance	R_thJC = 0.7 K/W enables >100 W dissipation with minimal temperature rise when mounted on heatsink or 6 cm² PCB copper.
JEDEC-qualified reliability	Complies with J-STD-20 (reflow) and JESD22 (HTOL, TC) standards for industrial and telecom applications requiring >10-year field life.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - suitable for environmentally regulated deployments including data centers and telecom infrastructure.

Applications

Server SMPS Secondary Side

Telecom 48 V Input Rectification

Use Scenario: High-current 12 V output stage in 1U redundant AC-DC power supplies for cloud servers.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 2.9 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky, enabling 5–7 W thermal savings per rail at 100 A.

Use Scenario: Primary-side active clamp or secondary-side rectification in 48 V–12 V isolated DC-DC modules for 5G base stations.

IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 100 A pulses with fast turn-off (t_f = 8 ns) to minimize dead-time losses.

Use Value: 110 mJ E_AS withstands line transients up to ±100 V without failure, reducing need for TVS protection on 48 V bus inputs.

Industrial PLC Power Modules

EV Onboard Charger Auxiliary Supplies

Use Scenario: 24 V auxiliary supply in programmable logic controllers operating in ambient temperatures up to 70 °C.

IC Role / Device Role / Timing Role: Main switch in non-isolated buck converter delivering 15 A continuous output with tight thermal margin.

Use Value: R_thJC = 0.7 K/W allows direct mounting to aluminum chassis, eliminating discrete heatsink and saving >1200 mm³ volume.

Use Scenario: Isolated auxiliary power supply (12 V @ 5 A) inside EV onboard chargers, subject to automotive temperature cycling (-40 to +125 °C).

IC Role / Device Role / Timing Role: High-side switch in flyback controller IC feedback loop, requiring stable V_GS(th) (2.1–3.3 V) across temperature.

Use Value: V_GS(th) variation <0.6 V from -40 to 125 °C ensures consistent turn-on timing and prevents shoot-through in dual-MOSFET gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB029N06N	Same die, PG-TO263-3 (D²PAK) package; R_thJC = 0.9 K/W; identical R_DS(on), Q_g, and E_AS.	Requires larger PCB footprint; less effective thermal coupling than I²-PAK tab; preferred for surface-mount-only assembly.	Select IPB029N06N only if D²PAK footprint is standardized and thermal budget allows +0.2 K/W junction-to-case resistance.
STL220N6F7	60 V, 220 A, R_DS(on) = 2.0 mΩ, Q_g = 72 nC, R_thJC = 0.5 K/W; higher current rating but 29% higher gate charge.	Better thermal performance but demands stronger gate driver; not JEDEC-qualified for telecom use.	Choose STL220N6F7 only when peak current exceeds 136 A and gate drive capability supports ≥72 nC; verify qualification status for target end-equipment.

Compared with IPB029N06N, IPI029N06NAKSA1 offers lower thermal resistance and superior mechanical stability via its I²-PAK tab; versus STL220N6F7, it trades 29% lower gate charge and JEDEC qualification for reduced current headroom - making it optimal for space-constrained, reliability-critical telecom and server applications.

Availability

IPI029N06NAKSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom power modules, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPI029N06NAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-current synchronous rectification and primary-side switching in enterprise and infrastructure power systems.

FAQ

What is the maximum continuous drain current for IPI029N06NAKSA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 105 A, as specified in Table 2 of the Rev. 2.5 datasheet. This derating reflects thermal limits imposed by R_thJC = 0.7 K/W and junction temperature ceiling of 175 °C. Operation beyond this value risks thermal runaway under sustained load.

Does IPI029N06NAKSA1 support gate drive voltages below 10 V?

Yes - it operates with V_GS ≥ 6 V, delivering R_DS(on) ≤ 4.4 mΩ at I_D = 25 A (Table 4). However, full-rated 136 A performance requires V_GS = 10 V to ensure gate threshold margin and minimize on-resistance variation across temperature and unit-to-unit spread.

Is the drain tab electrically isolated from the PCB mounting plane?

No - the drain tab (Pin 2) is internally connected to the MOSFET's drain and is not insulated. When mounted on a heatsink or copper pour, that surface must be electrically isolated from other circuit nodes using insulating pads or coatings unless intentionally used as a common drain return path.

How does the body diode's reverse recovery performance compare to discrete Schottky diodes?

The integrated body diode has t_rr = 54 ns and Q_rr = 77 nC at I_F = 100 A, which is slower and higher-charge than most 45 V Schottky diodes (e.g., ~10 ns, <10 nC). It is intended for synchronous rectification - not freewheeling - and should not replace Schottky diodes in high-dV/dt, low-Q_rr applications like PFC boost stages.

IPI029N06NAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 75µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI029N06NAKSA1 FAQ

1.How can I place an order for IPI029N06NAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI029N06NAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI029N06NAKSA1 reliable?

The price and inventory of IPI029N06NAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI029N06NAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI029N06NAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI029N06NAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI029N06NAKSA1?

IPI029N06NAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI029N06NAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI029N06NAKSA1?

For technical support, including IPI029N06NAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI029N06NAKSA1 requirements.

6.How does Aetrix verify that IPI029N06NAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI029N06NAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI029N06NAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI029N06NAKSA1?

All IPI029N06NAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI029N06NAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI029N06NAKSA1 part is unused and in its original packaging.

Return procedure for IPI029N06NAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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