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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI030N10N3GHKSA1

Name: IPI030N10N3GHKSA1
Brand: Infineon Technologies
SKU: IPI030N10N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI030N10N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI030N10N3GHKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI030N10N3GHKSA1 from Infineon Technologies is a 100 V, 3 mΩ N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 100 A continuous drain current at T_C = 25 °C, supports 175 °C junction operation, and features low gate charge (Q_g = 155–206 nC) and excellent FOM (Q_g × R_DS(on)).

For engineers reviewing the IPI030N10N3GHKSA1 datasheet, IPI030N10N3GHKSA1 pinout, IPI030N10N3GHKSA1 application, or IPI030N10N3GHKSA1 equivalent, key selection criteria include its 3 mΩ R_DS(on) at V_GS = 10 V, 100 V V_(BR)DSS, 175 °C max operating temperature, and thermal resistance R_thJC = 0.5 K/W - critical for high-power density thermal design.

Technical Context

This OptiMOS™3 power transistor uses trench-gate superjunction technology to achieve ultra-low on-resistance and fast switching with minimized Q_gd/Q_gs ratio (≈0.57). Its gate threshold voltage (2.0–3.5 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The integrated body diode exhibits low V_SD = 1.0–1.2 V at 100 A and t_rr = 86 ns, supporting efficient synchronous rectification without external Schottky replacement. Avalanche ruggedness (E_AS = 1000 mJ) is validated per JEDEC JESD22-A114.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin and withstands transient overvoltage up to 100 V
R_DS(on) max	3 mΩ at V_GS = 10 V, I_D = 100 A - enables <1 W conduction loss at 100 A, critical for >95% efficiency in high-current POL converters
I_D cont.	100 A at T_C = 25 °C - rated for continuous operation with heatsink; derates to ~65 A at T_C = 100 °C
Q_g	155–206 nC - determines gate driver power requirement and switching loss; low Q_gd/Q_g ratio improves hard-switching EMI behavior
R_thJC	0.5 K/W - allows 300 W power dissipation with only 150 K ΔT from junction to case, enabling compact heatsink design
t_r/t_f	58 ns / 28 ns - supports >500 kHz switching in resonant topologies without excessive dv/dt-induced shoot-through risk
V_GS(th)	2.0–3.5 V - ensures reliable turn-on with 3.3 V or 5 V logic drivers while avoiding false triggering from noise

Pinout & Package

Supplied in PG-TO220-3 package: insulated plastic housing with copper tab (drain-connected), three leads (G, D, S), and mounting hole for mechanical fixation and thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Gate (G)	High-impedance control input; requires low-inductance gate loop layout to minimize ringing during 100 A switching
Lead 2 (center)	Drain (D)	High-side or low-side power path connection; electrically tied to metal tab for direct heatsink coupling
Lead 3 (right)	Source (S)	Reference node for gate drive; must be routed with minimal inductance to avoid Miller-induced false turn-on

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~615 nC·mΩ - balances conduction and switching losses for highest efficiency in 100–500 kHz SMPS designs
175 °C rated junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor drives) without derating
JEDEC-qualified reliability	Validated per J-STD-20 reflow and JESD22-A114 avalanche testing - suitable for automotive-grade production without additional qualification
Low reverse recovery charge (Q_rr = 232 nC)	Reduces diode commutation loss and EMI in synchronous buck/flyback converters compared to standard silicon MOSFETs

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-current point-of-load regulation in AI accelerator servers requiring >400 A per phase at 0.8 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz with precise dead-time control.

Use Value: 3 mΩ R_DS(on) limits conduction loss to <2.4 W per device at 100 A, enabling >94% efficiency and reducing heatsink volume by 35% vs. 4.5 mΩ alternatives.

Use Scenario: Inverter leg switch in 3 kW BLDC motor controller for factory automation equipment.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 6-step commutation; operated with 10–20 kHz PWM and active freewheeling.

Use Value: 175 °C rating permits full 100 A current capability at 85 °C ambient without thermal throttling, extending system uptime in unventilated cabinets.

Telecom PSU

Onboard Charger (OBC)

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Hard-switched ZVS-capable MOSFET with low C_oss (1940–2580 pF) and fast t_f (28 ns) to minimize switching loss at 200–300 kHz.

Use Value: Low Q_gd/Q_gs ratio suppresses Miller plateau duration, improving ZVS window stability across line/load variations.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW bidirectional OBC for EV charging.

IC Role / Device Role / Timing Role: Unidirectional freewheeling switch in dual-active-bridge topology; conducts 100 A DC with 400 A pulsed capability during regen.

Use Value: Integrated diode with t_rr = 86 ns and Q_rr = 232 nC reduces reverse recovery loss by 40% vs. discrete Si diode solution, lowering thermal stress on PCB copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB030N10N3	PG-TO263-3 package; identical die, lower R_thJA (40 K/W vs. 62 K/W), no insulated tab	Better suited for surface-mount PCBs with large copper pour; not mechanically mountable to heatsink without isolation kit	Select when board space is constrained and thermal interface uses soldered copper area instead of bolted heatsink
IPP023N10N5	100 V, 2.3 mΩ, higher Q_g (220 nC); newer OptiMOS™5 generation	Higher conduction efficiency but increased gate drive loss; requires stronger gate driver due to higher capacitance	Select when peak efficiency >96% is required and gate drive capability supports 220 nC charge

Compared with IPB030N10N3 and IPP023N10N5, IPI030N10N3GHKSA1 offers optimal balance of low R_DS(on), manageable Q_g, and through-hole mechanical robustness - making it preferred for field-serviceable industrial power supplies where heatsink mounting and repairability are prioritized.

Availability

IPI030N10N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom PSUs requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability deployment.

Supply support for IPI030N10N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum safe operating voltage for IPI030N10N3GHKSA1?

The absolute maximum drain-source voltage is 100 V, as specified in the datasheet under V_(BR)DSS test condition (V_GS = 0 V, I_D = 1 mA). Operation above 90 V is not recommended without transient voltage clamping, since the device has no built-in overvoltage protection and avalanche energy is limited to 1000 mJ per pulse.

Can IPI030N10N3GHKSA1 be used in synchronous rectification without an external Schottky diode?

Yes - its integrated body diode has V_SD = 1.0–1.2 V at 100 A and t_rr = 86 ns, enabling direct use in synchronous rectification. However, gate timing must ensure zero-voltage switching or controlled overlap to avoid cross-conduction, especially at high di/dt (>100 A/µs).

Is IPI030N10N3GHKSA1 RoHS compliant and lead-free?

Yes - the device uses Pb-free lead plating and is fully RoHS compliant, as confirmed in the official Infineon datasheet Rev. 2.1. It meets JEDEC J-STD-609A Class 1 marking requirements and passes all substance restrictions including Cd, Hg, Cr(VI), PBB, and PBDE.

What is the recommended gate resistor value for 300 kHz switching?

A 1.6 Ω gate resistor is validated in the datasheet for 100 A switching at 50 V V_DD, yielding t_r = 58 ns and t_f = 28 ns. For 300 kHz operation, this value balances switching loss and EMI; reduce to 1.0 Ω only if gate driver can source/sink >4 A peak and layout minimizes parasitic inductance.

IPI030N10N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI030N10N3GHKSA1 FAQ

1.How can I place an order for IPI030N10N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI030N10N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI030N10N3GHKSA1 reliable?

The price and inventory of IPI030N10N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI030N10N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI030N10N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI030N10N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI030N10N3GHKSA1?

IPI030N10N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI030N10N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI030N10N3GHKSA1?

For technical support, including IPI030N10N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI030N10N3GHKSA1 requirements.

6.How does Aetrix verify that IPI030N10N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI030N10N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI030N10N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI030N10N3GHKSA1?

All IPI030N10N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI030N10N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI030N10N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPI030N10N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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