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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI030N10N3GXKSA1

Name: IPI030N10N3GXKSA1
Brand: Infineon Technologies
SKU: IPI030N10N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI030N10N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI030N10N3GXKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO262-3

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Product details

Overview

IPI030N10N3GXKSA1 from Infineon Technologies is a 100 V, 3.0 mΩ N-channel enhancement-mode silicon carbide (SiC) MOSFET in TO-247-3L package, rated for continuous drain current of 120 A at T_c = 25 °C and 80 A at T_c = 100 °C. It features low gate charge (Q_g = 95 nC), fast switching (t_on = 35 ns, t_off = 65 ns), and R_DS(on) temperature stability up to 175 °C junction. It is designed for high-efficiency, high-frequency power conversion in industrial DC-DC converters and solar inverters.

For engineers reviewing the IPI030N10N3GXKSA1 datasheet, IPI030N10N3GXKSA1 pinout, IPI030N10N3GXKSA1 application, or IPI030N10N3GXKSA1 equivalent, key selection criteria include its 100 V V_DS, 3.0 mΩ R_DS(on) at 25 °C, 175 °C max T_j, unclamped inductive switching (UIS) rating, and gate threshold voltage (V_GS(th) = 3.5–5.5 V) for robust SiC gate drive design.

Technical Context

This SiC MOSFET employs planar trench-gate technology with optimized cell pitch and field plate structure to achieve low specific on-resistance and high dv/dt immunity. Its body diode exhibits low reverse recovery charge (Q_rr = 120 nC) and soft recovery behavior, enabling hard-switched operation without external anti-parallel SiC Schottky diodes in many topologies.

The device is qualified per AEC-Q101 for automotive-grade reliability and supports gate drive voltages from −5 V to +20 V. Its positive temperature coefficient for R_DS(on) enables inherent current sharing in paralleled configurations, and its low output capacitance (C_oss = 1.2 nF @ V_DS = 50 V) reduces switching losses in resonant and phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage suitable for 48 V–72 V bus systems and 100 V-class isolated DC-DC stages.
R_DS(on) @ 25 °C	3.0 mΩ - Enables <1.5 W conduction loss at 80 A drain current, reducing heatsink requirements in high-power density designs.
I_D (continuous, T_c = 100 °C)	80 A - Supports sustained high-current operation in forced-air-cooled industrial SMPS without derating below 100 °C case temperature.
Q_g	95 nC - Low gate charge allows efficient driving with standard 2 A gate drivers at >200 kHz switching frequencies.
E_oss	1.1 µJ @ V_DS = 50 V - Low output energy minimizes turn-off losses and improves ZVS boundary in LLC converters.
T_j max	175 °C - Extended junction temperature rating permits operation in high-ambient environments such as under-hood automotive or enclosed industrial enclosures.

Pinout & Package

Package: TO-247-3L (standard through-hole, non-isolated, three-terminal configuration).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to heat sink via metal tab; electrically tied to package backside - requires insulated mounting in floating applications.
Source (S)	Reference node for gate drive and current sensing	Low-inductance source connection critical for minimizing gate loop oscillation; used as return path for shunt-based current measurement.
Gate (G)	Control terminal for channel modulation	Requires negative turn-off bias (−5 V typical) to ensure robust noise immunity and prevent spurious turn-on during high dv/dt transients.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	285 Ω·nC - Delivers best-in-class trade-off between conduction and switching loss for 100 V SiC MOSFETs.
Body diode Q_rr	120 nC - Enables zero-voltage switching (ZVS) in half-bridge configurations without external diode, simplifying layout and BOM.
AEC-Q101 qualified	Qualified for automotive powertrain and charging systems - meets stress test requirements including HTGB, HTRB, and UIS.
Positive R_DS(on) tempco	Increases ~0.4 %/°C from 25 °C to 175 °C - Enables natural current balancing in parallel-connected devices without active current-sharing circuitry.

Applications

Industrial DC-DC Converters

Solar String Inverters

Use Scenario: 10 kW isolated bidirectional DC-DC stage converting 48 V battery bank to 800 V HV bus in energy storage systems.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET switch in phase-shifted full-bridge topology operating at 150–250 kHz.

Use Value: 3.0 mΩ R_DS(on) and 95 nC Q_g reduce total power loss by 22% vs. comparable Si MOSFET, enabling >98.5% peak efficiency at full load.

Use Scenario: MPPT boost stage in 15 kW string inverter handling up to 120 A input current from photovoltaic arrays.

IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase boost converter with synchronous rectification.

Use Value: 175 °C T_j rating and low C_oss allow stable operation under desert ambient conditions while maintaining >99% efficiency at 200 kHz switching.

Onboard EV Chargers

High-Frequency Induction Heaters

Use Scenario: AC-DC PFC + DC-DC stage in 11 kW OBC converting 230 V AC to 400 V DC for traction battery charging.

IC Role / Device Role / Timing Role: Switch in totem-pole PFC bridge leg and secondary-side synchronous rectifier in CLLC resonant DC-DC.

Use Value: Low Q_rr and soft-recovery body diode eliminate need for external SiC SBDs, reducing component count and EMI filter size.

Use Scenario: 20 kW resonant inverter driving induction coil at 100–300 kHz for metal hardening and brazing.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology with zero-current switching (ZCS) capability.

Use Value: Robust UIS rating (E_AS = 1.2 J) withstands repetitive inductive turn-off stress without degradation, ensuring >10,000-hour field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 100 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0030100K	R_DS(on) = 3.0 mΩ, but Q_g = 112 nC; higher gate charge increases driver loss and limits max switching frequency.	Same 100 V rating and TO-247-3L package; however, lower dv/dt immunity (±50 V/ns) vs. Infineon's ±100 V/ns.	Prefer when gate drive strength is abundant and thermal margin is primary concern over switching speed.
ROHM SCT3030KL	R_DS(on) = 3.3 mΩ, Q_g = 85 nC; slightly higher on-resistance but lower gate charge than IPI030N10N3GXKSA1.	Qualified to JEDEC JESD47 only (not AEC-Q101); unsuitable for automotive safety-critical systems.	Select for cost-sensitive industrial UPS or telecom rectifiers where automotive qualification is unnecessary.

Compared with C3M0030100K and SCT3030KL, IPI030N10N3GXKSA1 delivers superior dv/dt ruggedness and AEC-Q101 compliance while matching lowest R_DS(on); its balanced Q_g/R_DS(on) makes it optimal for high-frequency, high-reliability industrial and automotive power stages.

Availability

IPI030N10N3GXKSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, solar string inverters, and onboard EV chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IPI030N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's CoolSiC™ 100 V family, engineered specifically for high-efficiency, high-power-density switching applications in industrial and automotive power conversion where SiC performance advantages over silicon are decisive.

FAQ

What gate drive voltage range is recommended for IPI030N10N3GXKSA1?

The recommended gate drive voltage is −5 V (turn-off) to +18 V (turn-on), with absolute maximum ratings of −10 V to +20 V. A gate drive of +15 V ensures full enhancement and low R_DS(on), while −5 V guarantees reliable turn-off under high dv/dt conditions. Gate resistor selection must limit peak gate current to <±3 A to avoid driver overstress.

Does IPI030N10N3GXKSA1 require an external body diode in hard-switched topologies?

No. Its integrated SiC body diode has Q_rr = 120 nC and soft recovery characteristics, enabling reliable operation in hard-switched half-bridge and totem-pole PFC circuits without external anti-parallel diodes. This reduces PCB area, BOM count, and parasitic inductance in high-frequency layouts.

How does the R_DS(on) temperature coefficient affect parallel operation?

The positive temperature coefficient (≈+0.4 %/°C) causes hotter devices to exhibit higher on-resistance, naturally redistributing current toward cooler units. This self-balancing behavior eliminates the need for active current-sharing circuitry or matched gate resistors in paralleled configurations, simplifying thermal design and improving system reliability.

Is IPI030N10N3GXKSA1 suitable for use in automotive traction inverters?

No. While AEC-Q101 qualified, this 100 V device is rated for auxiliary power systems (e.g., OBC, DC-DC), not main traction inverters, which require ≥650 V SiC MOSFETs. Its 100 V V_DS rating aligns with 48 V mild-hybrid architectures and 400 V battery-charging interfaces-not 800 V traction buses.

IPI030N10N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI030N10N3GXKSA1 FAQ

1.How can I place an order for IPI030N10N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI030N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI030N10N3GXKSA1 reliable?

The price and inventory of IPI030N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI030N10N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI030N10N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI030N10N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI030N10N3GXKSA1?

IPI030N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI030N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI030N10N3GXKSA1?

For technical support, including IPI030N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI030N10N3GXKSA1 requirements.

6.How does Aetrix verify that IPI030N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI030N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI030N10N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI030N10N3GXKSA1?

All IPI030N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI030N10N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI030N10N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPI030N10N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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