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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI032N06N3 G

Name: IPI032N06N3 G
Brand: Infineon Technologies
SKU: IPI032N06N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI032N06N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI032N06N3 G.pdf

Description:: MOSFET N-CH 60V 120A TO262-3

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Product details

Overview

IPI032N06N3 G from Infineon Technologies is a 60 V, 100 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters, featuring low gate charge (34 nC), fast switching (t_on = 17 ns), and avalanche-rated ruggedness.

For engineers reviewing the IPI032N06N3 G datasheet, IPI032N06N3 G pinout, IPI032N06N3 G application, or IPI032N06N3 G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, safe operating area under pulse conditions, thermal resistance (R_thJC = 0.5 K/W), and gate threshold voltage stability across temperature.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve ultra-low on-resistance while maintaining robust short-circuit withstand capability. Its gate charge profile supports high-frequency synchronous rectification up to 500 kHz.

The device operates in enhancement mode with zero gate current in steady state, features integrated body diode with 100 A pulsed forward current rating, and meets JEDEC JESD47 reliability standards for industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; enables use in 48 V bus systems with 20 % safety margin.
R_DS(on) max @ V_GS = 10 V	3.2 mΩ - Enables <1.5 W conduction loss at 20 A continuous drain current in TO-220 package.
Q_g	34 nC - Low total gate charge reduces driver power requirement and switching losses in hard-switched topologies.
I_D continuous @ T_C = 25 °C	100 A - Sustained current capability limited by bondwire and package thermal design, not silicon area.
R_thJC	0.5 K/W - Junction-to-case thermal resistance enables 120 W power dissipation with 60 K temperature rise above case.
E_AS	520 mJ - Single-pulse avalanche energy rating confirms ruggedness for inductive load switching without external snubbers.
V_GS(th)	2.0–4.0 V - Gate threshold range ensures reliable turn-on with standard 5 V logic-level drivers and immunity to noise-induced false triggering.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant). Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias current; sensitive to ESD and requires RC snubber for ringing suppression.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits drain-referenced cooling.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 3.2 mΩ R_DS(on) in TO-220 without die size penalty, reducing board space vs. older planar MOSFETs.
Avalanche-rated (E_AS = 520 mJ)	Eliminates need for external clamping circuits in motor phase-leg or relay driving applications with inductive kickback.
100 % UIS tested	Each unit undergoes unclamped inductive switching stress test, ensuring production lot consistency for mission-critical power stages.
JEDEC JESD47 qualified	Validated for >1,000 hours HTOL at 150 °C, supporting 10-year field life in industrial motor drives and UPS systems.
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements for automotive-tier 2 suppliers and EU EcoDesign compliance.

Applications

Brushless DC Motor Inverter

Server VRM High-Side Switch

Use Scenario: Three-phase inverter stage in 24–48 V BLDC fans and pumps, switching at 20–100 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 6-step commutation; handles peak currents up to 90 A with <100 ns dead-time control.

Use Value: 3.2 mΩ R_DS(on) cuts conduction loss by 35 % vs. legacy 5.5 mΩ devices, enabling 95.2 % efficiency at full load.

Use Scenario: High-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A.

IC Role / Device Role / Timing Role: Main power switch with gate drive synchronized to PWM controller; operates in hard-switched mode with 500 kHz frequency.

Use Value: 34 nC Q_g allows use of low-power gate drivers (e.g., IR35215), reducing driver BOM cost and layout complexity.

Industrial DC-DC Isolated Converter

Automotive Body Control Module Load Switch

Use Scenario: Primary-side switch in 1 kW LLC resonant converter with 400 V input, 48 V output.

IC Role / Device Role / Timing Role: ZVS-capable main switch; leverages low C_oss (1020 pF) and soft-recovery body diode for reduced switching loss.

Use Value: 520 mJ E_AS rating tolerates transient overvoltage during resonant tank misalignment, improving system MTBF.

Use Scenario: 12 V load switch controlling HVAC actuators, window lifters, and seat motors in BCM modules.

IC Role / Device Role / Timing Role: Protected high-side driver with integrated current sensing and thermal shutdown; replaces discrete FET + protection IC solution.

Use Value: 100 A pulsed rating supports 3× inrush current of 30 A solenoids without derating, eliminating need for parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB029N06N3 G	R_DS(on) = 2.9 mΩ (lower), Q_g = 37 nC (higher), same package and V_DS.	Better conduction loss but higher gate drive loss; preferred in <200 kHz fixed-frequency converters.	Select when thermal budget favors lower R_DS(on) over gate drive efficiency.
IPP032N06N3 G	Same R_DS(on), Q_g, and SOA; differs only in marking and tape-and-reel packaging (no functional difference).	No application impact; used interchangeably in automated SMT assembly where reel format required.	Choose for surface-mount-compatible logistics; identical electrical performance in all designs.

Compared with IPB029N06N3 G, IPI032N06N3 G trades 0.3 mΩ higher on-resistance for 3 nC lower gate charge-favoring high-frequency, gate-loss-sensitive designs-while IPP032N06N3 G offers identical silicon in different packaging, enabling drop-in replacement in SMT lines without requalification.

Availability

IPI032N06N3 G is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for IPI032N06N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–60 V systems where low R_DS(on) and fast switching coexist.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet Section 6.1. Continuous operation at this limit requires active heatsinking to maintain T_J ≤ 175 °C under worst-case ambient and power dissipation conditions. Derating curves in Figure 5 confirm 100 A current is only sustainable at T_C ≤ 25 °C; at 100 °C case temperature, max I_D drops to 52 A.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has t_rr = 52 ns and Q_rr = 43 nC at I_F = 50 A, enabling use in synchronous buck topologies up to 300 kHz. However, its forward voltage (V_SD = 1.4 V at 50 A) is higher than Schottky alternatives, so conduction loss must be weighed against gate drive simplification.

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (10–22 Ω typical) is mandatory to damp parasitic oscillation caused by gate-drain Miller capacitance interacting with PCB trace inductance. Without it, ringing exceeding 15 V overshoot can trigger spurious turn-on or exceed V_GS(max) = ±20 V rating.

How does the SOA curve change at elevated temperatures?

At T_C = 100 °C, the safe operating area shrinks significantly: continuous DC current drops from 100 A to 52 A, and single-pulse capability at 10 ms decreases from 320 A to 190 A. These limits are defined by thermal runaway onset-not bondwire fusing-and are plotted in Figure 3 of the datasheet.

IPI032N06N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 118µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI032N06N3 G FAQ

1.How can I place an order for IPI032N06N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI032N06N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI032N06N3 G reliable?

The price and inventory of IPI032N06N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI032N06N3 G is usually 5 days.

3.What payment methods are accepted for IPI032N06N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI032N06N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI032N06N3 G?

IPI032N06N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI032N06N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI032N06N3 G?

For technical support, including IPI032N06N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI032N06N3 G requirements.

6.How does Aetrix verify that IPI032N06N3 G is sourced from the original manufacturer or authorized distributors?

All IPI032N06N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI032N06N3 G meets industry standards.

7.What is the process for return or replacement of IPI032N06N3 G?

All IPI032N06N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPI032N06N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI032N06N3 G part is unused and in its original packaging.

Return procedure for IPI032N06N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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