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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI032N06N3GAKSA1

Name: IPI032N06N3GAKSA1
Brand: Infineon Technologies
SKU: IPI032N06N3GAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI032N06N3GAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI032N06N3GAKSA1.pdf

Description:: MOSFET N-CH 60V 120A TO262-3

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Product details

Overview

IPI032N06N3GAKSA1 from Infineon Technologies is a 60 V, 100 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters, with qualified AEC-Q101 reliability for automotive under-hood applications.

For engineers reviewing the IPI032N06N3GAKSA1 datasheet, IPI032N06N3GAKSA1 pinout, IPI032N06N3GAKSA1 application, or IPI032N06N3GAKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 500 mJ), thermal resistance (R_thJC = 0.9 K/W), and gate charge (Q_g = 78 nC) for hard-switching efficiency.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch to achieve low on-resistance and fast switching. It supports unidirectional current flow with integrated body diode rated for 100 A continuous forward current and 450 A pulsed current.

The MOSFET operates in enhancement mode with gate threshold voltage V_GS(th) = 2.0–4.0 V (typ. 3.0 V) and exhibits robust safe operating area (SOA) up to 100 V/100 A in linear mode for short-circuit tolerance in motor phase-legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage compatible with 48 V battery systems and 24 V industrial rails.
R_DS(on)	3.2 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current synchronous rectification.
I_D	100 A continuous - Supported by TO-220-3 package with copper tab and 1 cm² copper pour, suitable for PCB-mounted heatsinking.
Q_g	78 nC - Low gate charge reduces driver power and enables efficient operation at 100–200 kHz in LLC resonant converters.
E_AS	500 mJ - Avalanche-rated for single-pulse inductive load switching without external snubbers in BLDC motor drives.
R_thJC	0.9 K/W - Junction-to-case thermal resistance allows 120 W dissipation at ΔT = 108 K, supporting compact thermal design.
V_GS(th)	2.0–4.0 V - Threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant). Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to ground plane or source return path in half-bridge configurations.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias; driven via gate resistor to suppress ringing and control dV/dt.
Pin 3 (Drain)	Power output / high-side switch node	Connected to tab; must be isolated from heatsink unless using insulating pad; carries full load current and switching transients.

Key Features

Feature	Design Value
Optimized gate charge profile	Q_gs = 18 nC, Q_gd = 22 nC - Enables precise Miller plateau control and reduced switching losses in ZVS/ZCS topologies.
Enhanced avalanche ruggedness	Rated for 100% E_AS test per JEDEC JESD24-11 - Eliminates need for external clamping in automotive solenoid drivers.
Low reverse recovery charge (Q_rr)	120 nC - Reduces body diode conduction loss and EMI during freewheeling in synchronous buck stages.
AEC-Q101 qualified	Stress-tested across -40 °C to +175 °C ambient - Validated for engine control units, EPS, and HVAC blower modules.

Applications

Automotive Engine Control Unit (ECU)

Industrial Motor Drive Inverter

Use Scenario: High-side switching of fuel injector coils and ignition coils in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch controlling 12–48 V inductive loads with 10 ms pulse width and 100 A peak current.

Use Value: 3.2 mΩ R_DS(on) minimizes coil heating during dwell time; 500 mJ E_AS absorbs back-EMF without snubber.

Use Scenario: Phase-leg switching in 3-phase 400 W–2 kW servo drives for CNC and packaging machinery.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter stage, operating at 16 kHz PWM frequency.

Use Value: 78 nC Q_g enables fast turn-on with minimal gate driver power; 0.9 K/W R_thJC sustains 85 °C case temperature under continuous 75 A load.

Server PSU Synchronous Rectifier

Onboard Charger (OBC) DC-DC Stage

Use Scenario: Secondary-side synchronous rectification in 12 V/200 A output stage of 3 kW telecom rectifier.

IC Role / Device Role / Timing Role: Unidirectional power switch replacing Schottky diodes, driven by transformer-coupled gate signal.

Use Value: 3.2 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky; TO-220-3 mechanical stability supports automated assembly.

Use Scenario: Isolated DC-DC converter (400 V → 12 V) in EV onboard chargers handling bidirectional power flow.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, operating at 100 kHz with ZVS.

Use Value: Low Q_gd/Q_g ratio improves ZVS margin; 60 V rating accommodates 400 V bus with 20% overvoltage margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB029N06N3 G	R_DS(on) = 2.9 mΩ @ 10 V; higher gate charge (85 nC); same package	Better conduction loss but slower switching; suited for lower-frequency (<50 kHz) high-current applications	Select when minimizing I²R loss dominates over switching loss, e.g., battery disconnect switches.
IPP032N06N3 G	Same R_DS(on) and Q_g; PG-TO263-3 (D²PAK) surface-mount package	Requires reflow-compatible PCB layout; no through-hole mounting; better thermal performance with large copper areas	Select for space-constrained designs where automated SMT assembly and improved thermal spreading are prioritized.

Compared with IPB029N06N3 G, IPI032N06N3GAKSA1 trades 0.3 mΩ higher R_DS(on) for 7 nC lower Q_g, favoring high-frequency efficiency; versus IPP032N06N3 G, it offers identical electrical specs but through-hole mechanical robustness for vibration-prone environments.

Availability

IPI032N06N3GAKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, and server power supply designs requiring stable component supply and long-term lifecycle support.

Supply support for IPI032N06N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-current, high-efficiency switching in automotive and industrial power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature T_j is 175 °C. Continuous operation at this limit requires strict thermal design: case temperature must not exceed 135 °C when R_thJC = 0.9 K/W and P_D = 120 W, verified per JEDEC JESD51-2 with 1 cm² 2-oz copper.

Is the drain tab electrically isolated in the PG-TO220-3 package?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink requires a thermally conductive but electrically insulating pad (e.g., mica or ceramic) and non-conductive mounting hardware.

Does this MOSFET support 3.3 V logic-level gate drive?

It is not guaranteed for full enhancement at 3.3 V. V_GS(th) min is 2.0 V, but R_DS(on) rises sharply below 4.5 V. For reliable 100 A conduction, ≥10 V gate drive is required per datasheet Figure 5 (output characteristics).

How is avalanche capability validated for production lots?

Each production lot undergoes 100% single-pulse E_AS testing at 500 mJ per JEDEC JESD24-11. Test conditions: T_j = 25 °C, V_DD = 60 V, I_AS = 100 A, L = 0.1 mH, with post-test parameter verification including R_DS(on) and V_BR(DSS).

IPI032N06N3GAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 118µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI032N06N3GAKSA1 FAQ

1.How can I place an order for IPI032N06N3GAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI032N06N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI032N06N3GAKSA1 reliable?

The price and inventory of IPI032N06N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI032N06N3GAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI032N06N3GAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI032N06N3GAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI032N06N3GAKSA1?

IPI032N06N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI032N06N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI032N06N3GAKSA1?

For technical support, including IPI032N06N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI032N06N3GAKSA1 requirements.

6.How does Aetrix verify that IPI032N06N3GAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI032N06N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI032N06N3GAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI032N06N3GAKSA1?

All IPI032N06N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI032N06N3GAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI032N06N3GAKSA1 part is unused and in its original packaging.

Return procedure for IPI032N06N3GAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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