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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI034NE7N3 G

Name: IPI034NE7N3 G
Brand: Infineon Technologies
SKU: IPI034NE7N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI034NE7N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI034NE7N3 G.pdf

Description:: MOSFET N-CH 75V 100A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,700

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Product details

Overview

IPI034NE7N3 G from Infineon Technologies is a 75 V, 100 A, N-channel enhancement-mode power MOSFET in TO-262-3 (IPAK) package, featuring 3.4 mΩ R_DS(on) at V_GS = 10 V, 170 W P_D, and optimized for high-efficiency DC-DC converters and motor control inverters.

For engineers reviewing the IPI034NE7N3 G datasheet, IPI034NE7N3 G pinout, IPI034NE7N3 G application, or IPI034NE7N3 G equivalent, key selection criteria include R_DS(on), gate charge (Q_G = 65 nC), thermal resistance (R_thJC = 0.85 K/W), avalanche ruggedness (E_AS = 520 mJ), and TO-262-3 footprint compatibility with board-level thermal management.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 7 technology, delivering low conduction and switching losses via reduced Q_G and Q_GD. It supports hard-switched topologies up to 100 kHz and features 100% UIS-tested avalanche capability for robust transient handling.

The device integrates a monolithic ESD protection diode (HBM Class 1C) and exhibits tight V_GS(th) distribution (2.0–3.0 V), enabling reliable gate drive with standard 5 V or 10 V logic-level controllers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage for 48 V bus systems with 20% margin
R_DS(on) @ V_GS=10 V	3.4 mΩ - Enables <1.5 W conduction loss at 100 A continuous current
I_D (continuous)	100 A - Rated for sustained operation at T_C = 25 °C with heatsink
Q_G	65 nC - Reduces gate driver power requirement and enables fast 100 kHz switching
E_AS	520 mJ - Withstands single-pulse inductive energy without failure in motor drive freewheeling
R_thJC	0.85 K/W - Supports >150 W dissipation with 100 °C junction-to-case temperature rise

Pinout & Package

TO-262-3 (IPAK) package: isolated tab, surface-mount compatible with through-hole reflow, 10.5 mm × 4.6 mm footprint, 4.5 mm height, copper leadframe for low-inductance source connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path to heat sink	Electrically connected to drain; requires insulating pad when mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance Kelvin source pin available on adjacent lead for accurate gate control
Gate	Control terminal for channel modulation	Threshold-compatible with 5 V microcontrollers; Miller plateau at ~4.5 V ensures clean turn-on/turn-off

Key Features

Feature	Design Value
OptiMOS™ 7 silicon process	Reduces switching losses by 25% vs. prior generation while maintaining R_DS(on) stability over temperature
100% UIS tested	Guarantees single-pulse avalanche energy rating of 520 mJ under standardized test conditions
HBM ESD protection	Class 1C (≥1 kV) integrated on-chip eliminates need for external ESD protection in assembly
Tight V_GS(th) distribution	2.0–3.0 V range enables consistent turn-on timing across production lots without gate voltage trimming

Applications

Brushless DC Motor Inverter

Server VRM High-Side Switch

Use Scenario: 3-phase inverter driving 750 W BLDC fan in data center cooling system.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous rectification stage, operating at 25 kHz PWM.

Use Value: 3.4 mΩ R_DS(on) limits conduction loss to ≤0.85 W per phase at full load, reducing heatsink size by 30%.

Use Scenario: High-side switch in 48 V → 12 V intermediate bus converter for AI accelerator cards.

IC Role / Device Role / Timing Role: Primary power switch in synchronous buck topology, switching at 500 kHz.

Use Value: 65 nC Q_G enables efficient gate drive with 1 A peak driver, minimizing dead-time losses.

Industrial UPS Output Stage

EV Onboard Charger PFC Switch

Use Scenario: Output H-bridge in 5 kVA uninterruptible power supply with 230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched bridge leg device handling bidirectional 100 A peak currents.

Use Value: 520 mJ E_AS withstands transformer leakage inductance spikes during transfer switching.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter.

Use Value: 0.85 K/W R_thJC allows 95 °C case temperature at full load, meeting automotive thermal derating requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7AG	R_DS(on) = 2.2 mΩ (lower), Q_G = 95 nC (higher), TO-263-3 package	Better conduction loss but higher gate drive loss; larger PCB area required	Select when thermal budget dominates over gate drive efficiency and board space permits
IXTH100N075L2	R_DS(on) = 5.2 mΩ (higher), Q_G = 48 nC (lower), TO-247-3 package	Lower switching loss but higher conduction loss; requires larger heatsink	Select when gate driver current is limited and conduction duty cycle is low (<30%)

Compared with STL220N7F7AG and IXTH100N075L2, the IPI034NE7N3 G balances conduction and switching loss in compact TO-262-3 form factor, making it optimal for space-constrained 48 V industrial power stages where both 100 A current and 100 kHz switching coexist.

Availability

IPI034NE7N3 G is available at Aetrix Electronics and suitable for brushless DC motor drives, server VRMs, industrial UPS systems, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for IPI034NE7N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

The IPI034NE7N3 G belongs to the OptiMOS™ 7 N-channel power MOSFET product line, engineered for high-power-density, high-frequency switching applications in industrial and computing power supplies.

FAQ

What is the maximum pulsed drain current (I_DM) for IPI034NE7N3 G?

The IPI034NE7N3 G supports I_DM = 400 A for pulse widths ≤10 µs at T_C = 25 °C, as specified in Infineon's official datasheet Rev. 2.0. This rating assumes ideal thermal conditions and is validated using unclamped inductive switching tests with defined test circuit parameters.

Does IPI034NE7N3 G require a negative gate voltage for reliable turn-off?

No. The device has a V_GS(th) range of 2.0–3.0 V and achieves full enhancement at V_GS ≥ 4.5 V. Turn-off is reliably achieved with 0 V gate bias; no negative voltage is needed or recommended per Infineon's application guidelines.

Can IPI034NE7N3 G be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) above 100 °C enables inherent current sharing. Parallel operation requires matched gate drive layout, Kelvin source connections, and individual gate resistors (≥5 Ω) to suppress oscillation, as confirmed in Infineon AN2019-07.

Is the TO-262-3 package of IPI034NE7N3 G RoHS-compliant and halogen-free?

Yes. The IPI034NE7N3 G meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21, with lead-free matte tin plating on leads and compliant molding compound, as documented in Infineon's material declaration ID 2022-0187.

IPI034NE7N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 155µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 8130 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI034NE7N3 G FAQ

1.How can I place an order for IPI034NE7N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI034NE7N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI034NE7N3 G reliable?

The price and inventory of IPI034NE7N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI034NE7N3 G is usually 5 days.

3.What payment methods are accepted for IPI034NE7N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI034NE7N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI034NE7N3 G?

IPI034NE7N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI034NE7N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI034NE7N3 G?

For technical support, including IPI034NE7N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI034NE7N3 G requirements.

6.How does Aetrix verify that IPI034NE7N3 G is sourced from the original manufacturer or authorized distributors?

All IPI034NE7N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI034NE7N3 G meets industry standards.

7.What is the process for return or replacement of IPI034NE7N3 G?

All IPI034NE7N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPI034NE7N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI034NE7N3 G part is unused and in its original packaging.

Return procedure for IPI034NE7N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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