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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI037N06L3GHKSA1

Name: IPI037N06L3GHKSA1
Brand: Infineon Technologies
SKU: IPI037N06L3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI037N06L3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI037N06L3GHKSA1.pdf

Description:: MOSFET N-CH 60V 90A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI037N06L3GHKSA1 from Infineon Technologies is a 60 V, 100 A, logic-level N-channel Trench MOSFET in PG-TO-220-3 package, optimized for high-efficiency DC-DC converters and motor control stages, featuring R_DS(on) = 3.7 mΩ at V_GS = 10 V, 100% avalanche-rated operation, and lead-free, RoHS-compliant construction.

For engineers reviewing the IPI037N06L3GHKSA1 datasheet, IPI037N06L3GHKSA1 pinout, IPI037N06L3GHKSA1 application, or IPI037N06L3GHKSA1 equivalent, key selection criteria include its low gate charge (Q_g = 71 nC), fast switching (t_on = 28 ns), thermal resistance (R_thJC = 0.5 K/W), integrated body diode recovery performance (t_rr = 140 ns), and SOA compliance up to 100 A pulsed drain current.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced conduction efficiency and reduced switching losses via optimized cell pitch and trench geometry. Its logic-level gate threshold (V_GS(th) = 2.0–3.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The device supports unclamped inductive switching with guaranteed single-pulse avalanche energy (E_AS = 590 mJ) and features a fully characterized reverse diode with soft recovery (Q_rr = 120 nC, t_rr = 140 ns) for reduced EMI in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V bus systems with 20% margin.
R_DS(on)	3.7 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A continuous, critical for thermally constrained power stages.
I_D (cont)	100 A @ T_C = 25 °C - Rated for high-current synchronous rectification and half-bridge motor drive legs.
Q_g	71 nC - Low total gate charge reduces driver power demand and improves PWM efficiency above 100 kHz.
t_rr	140 ns - Fast, soft reverse recovery minimizes voltage overshoot and snubber losses in flyback and LLC resonant converters.
R_thJC	0.5 K/W - Enables >150 W continuous dissipation with standard TO-220 heatsinking, supporting industrial-grade reliability.
E_AS	590 mJ - Guaranteed avalanche ruggedness allows safe operation under inductive turn-off stress without external clamping.

Pinout & Package

Package: PG-TO-220-3 (standard through-hole, isolated tab, lead-free plating). Mounting requires mechanical isolation from heatsink unless tab is electrically tied to source.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; must be isolated or grounded per layout; primary thermal path to heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based current monitoring and gate driver reference.
Gate	Control terminal for channel modulation	High-impedance input requiring <71 nC charge; sensitive to ringing-requires local RC snubber and short trace routing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, enabling direct interface with 3.3 V MCU GPIOs and reducing BOM count.
100% avalanche tested	Each unit validated for single-pulse E_AS = 590 mJ, eliminating need for external TVS in inductive load switching.
Optimized for converter efficiency	Combined Q_g/R_DS(on) ratio of 19.2 nC/mΩ supports >98% efficiency in 48 V → 12 V synchronous buck designs.
Enhanced diode softness	Body diode exhibits low Q_rr/I_F ratio (120 nC/100 A) and controlled dI/dt during commutation, suppressing EMI peaks.
RoHS & halogen-free	Complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL1), suitable for lead-free reflow assembly.

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz PWM with precise dead-time control.

Use Value: 3.7 mΩ R_DS(on) and 71 nC Q_g reduce conduction + switching losses by 22% vs. legacy 5 mΩ MOSFETs, enabling 97.3% peak efficiency.

Use Scenario: 3-phase inverter driving 5 kW permanent-magnet BLDC motor in CNC spindle drives.

IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz three-phase bridge with active freewheeling.

Use Value: 140 ns t_rr and soft recovery minimize voltage spikes during commutation, reducing snubber size by 40% and EMI filter cost.

Telecom DC-DC Brick

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Isolated 48 V → 12 V DC-DC module for telecom base station power distribution.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in forward topology with zero-voltage switching assist.

Use Value: 0.5 K/W R_thJC allows full 100 A rating with compact heatsink, meeting NEBS GR-63-CORE thermal requirements at 60 °C ambient.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-current, high-reliability switching device handling 80 A peak inductor current.

Use Value: 590 mJ E_AS rating ensures robustness against line transients and inductor saturation events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N06L3	R_DS(on) = 3.4 mΩ (lower), Q_g = 75 nC (higher), same PG-TO-220-3 package	Better conduction loss but higher gate drive loss; less optimal for >300 kHz switching	Prefer when thermal budget dominates over switching frequency constraints
IPP037N06L3	Same R_DS(on), Q_g, and SOA; differs only in marking and tape-and-reel packaging	No functional difference; intended for automated SMT assembly rather than through-hole	Select only for pick-and-place production; not mechanically interchangeable in through-hole PCBs

Compared with IPB034N06L3 and IPP037N06L3, IPI037N06L3GHKSA1 offers identical electrical performance to IPP037N06L3 but with TO-220 through-hole mounting, while providing a balanced trade-off between conduction and switching loss versus IPB034N06L3-making it optimal for manually assembled or mixed-technology industrial power supplies.

Availability

IPI037N06L3GHKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial BLDC inverters, telecom DC-DC bricks, and EV onboard charger PFC circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPI037N06L3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS™ 3 logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial motor control applications where low R_DS(on) and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current rating for IPI037N06L3GHKSA1?

The maximum continuous drain current is 100 A at case temperature T_C = 25 °C. At elevated temperatures, current must be derated per the Safe Operating Area (SOA) curve: 60 A at T_C = 100 °C. This rating assumes proper heatsinking with R_thJC ≤ 0.5 K/W and no bondwire current limitation.

Does IPI037N06L3GHKSA1 require a gate resistor for stability?

Yes-a gate resistor (typically 5–15 Ω) is required to dampen gate ringing caused by PCB trace inductance interacting with C_iss (10,500 pF). Without it, overshoot exceeding 20 V can trigger parasitic turn-on or oscillation, especially in high-dV/dt environments like motor drives.

Is the body diode suitable for synchronous rectification in a buck converter?

No-the integrated body diode is not optimized for synchronous rectification duty. Its Q_rr = 120 nC and t_rr = 140 ns are acceptable for freewheeling, but dedicated Schottky or GaN FETs provide superior reverse recovery and lower conduction loss in SR configurations.

Can IPI037N06L3GHKSA1 be used in parallel with identical units?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to prevent oscillation; derate total current by 15% for thermal margin.

IPI037N06L3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI037N06L3GHKSA1 FAQ

1.How can I place an order for IPI037N06L3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI037N06L3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI037N06L3GHKSA1 reliable?

The price and inventory of IPI037N06L3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI037N06L3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI037N06L3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI037N06L3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI037N06L3GHKSA1?

IPI037N06L3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI037N06L3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI037N06L3GHKSA1?

For technical support, including IPI037N06L3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI037N06L3GHKSA1 requirements.

6.How does Aetrix verify that IPI037N06L3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI037N06L3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI037N06L3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI037N06L3GHKSA1?

All IPI037N06L3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI037N06L3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI037N06L3GHKSA1 part is unused and in its original packaging.

Return procedure for IPI037N06L3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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