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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI037N08N3GHKSA1

Name: IPI037N08N3GHKSA1
Brand: Infineon Technologies
SKU: IPI037N08N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI037N08N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI037N08N3GHKSA1.pdf

Description:: MOSFET N-CH 80V 100A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI037N08N3GHKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO262-3 (IPAK) package, rated for 80 V V_DS, 3.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, with 100% avalanche tested ruggedness and optimized gate charge × R_DS(on) figure-of-merit for high-frequency synchronous rectification in DC/DC converters.

For engineers reviewing the IPI037N08N3GHKSA1 datasheet, IPI037N08N3GHKSA1 pinout, IPI037N08N3GHKSA1 application, or IPI037N08N3GHKSA1 equivalent, this device supports high-current, low-loss switching in server VRMs, telecom POL converters, and industrial motor drives where thermal robustness and fast switching are critical.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon technology, featuring a trench-gate structure optimized for low R_DS(on) and reduced gate charge-specifically Q_g = 88–117 nC and Q_gd = 18 nC. Its dynamic parameters include C_iss = 6100–8110 pF and t_r = 79 ns, enabling efficient operation above 500 kHz.

The device integrates a robust body diode with t_rr = 73 ns and Q_rr = 136 nC, supporting zero-voltage switching (ZVS) topologies. Thermal resistance R_thJC = 0.7 K/W ensures effective heat transfer to the heatsink under continuous 100 A conduction at T_C = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage for 48 V input systems and 12 V/48 V intermediate bus applications.
R_DS(on), max	3.5 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at 100 A, critical for high-efficiency VRMs.
Q_g	88–117 nC - Low total gate charge reduces driver power and enables fast turn-on/turn-off with standard gate drivers.
E_AS	510 mJ @ I_D = 100 A - Confirmed single-pulse avalanche energy supports reliable operation during transient overloads.
t_r/t_f	79 ns / 14 ns - Fast switching transitions minimize overlap losses in hard-switched and resonant topologies.
R_thJC	0.7 K/W - Allows direct mounting to heatsink for sustained 100 A operation without derating below 100 °C case temperature.
V_GS(th)	2.0–3.5 V - Normal-level gate threshold compatible with 5 V and 10 V logic-level drivers without level shifting.

Pinout & Package

Package: PG-TO262-3 (IPAK), through-hole variant with isolated drain tab for direct heatsink mounting and mechanical stability in high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connected to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <20 V absolute max; routed with controlled impedance to suppress ringing.
Pin 3 (Drain)	Power output	Internally bonded to metal tab; must be soldered to large copper area or heatsink for thermal and current path integrity.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	310–410 nC·mΩ - Enables >95% efficiency in 48 V→12 V buck converters at 500 kHz switching frequency.
100% avalanche tested	Rated E_AS = 510 mJ - Guarantees ruggedness against inductive kickback in motor drive and relay control circuits.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.8× from 25 °C to 175 °C - Maintains stable current sharing in paralleled configurations.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 - Supports green manufacturing and long-term regulatory compliance for industrial OEMs.

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converter delivering 50–200 A at 0.8–1.8 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with tight dead-time control.

Use Value: 3.5 mΩ R_DS(on) and 79 ns rise time reduce conduction + switching losses by ≥12% vs. legacy 5 mΩ devices.

Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V POL module in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in forward or LLC topology.

Use Value: 510 mJ avalanche rating withstands line transients; 0.7 K/W R_thJC sustains full load at 70 °C ambient without forced air.

Industrial Motor Drives

EV Onboard Chargers (OBC) DC/DC Stage

Use Scenario: Half-bridge inverter stage driving 3 kW BLDC motors in HVAC compressors or pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 10–20 kHz PWM-controlled inverter leg.

Use Value: Body diode t_rr = 73 ns and Q_rr = 136 nC minimize commutation losses and reduce snubber requirements.

Use Scenario: Isolation-stage synchronous rectifier in 3.3 kW bidirectional OBC DC/DC converter (400 V → 48 V).

IC Role / Device Role / Timing Role: Secondary-side 80 V-rated MOSFET handling up to 100 A peak current in phase-shifted full-bridge.

Use Value: 100 A continuous rating and 400 A pulsed capability support high-power density design with minimal parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP037N08N3G	Same die, PG-TO220-3 package; R_thJC = 0.7 K/W identical but lower mechanical robustness and no isolated tab.	Better suited for prototyping or low-vibration consumer applications; not recommended for industrial vibration or high-reliability heatsink mounting.	Select when cost sensitivity outweighs mechanical reliability and thermal interface consistency.
IPB035N08N3G	SMD variant (PG-TO263-3); identical R_DS(on) and Q_g, but R_thJC = 0.7 K/W and requires reflow-compatible layout.	Enables automated assembly and compact layouts; unsuitable for through-hole board designs or manual heatsink attachment.	Choose for volume production with SMT lines and space-constrained PCBs where thermal pad soldering is feasible.

Compared with IPP037N08N3G and IPB035N08N3G, IPI037N08N3GHKSA1 offers identical electrical performance with enhanced mechanical mounting security via its IPAK through-hole form factor-ideal for field-serviceable or high-shock industrial power stages.

Availability

IPI037N08N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IPI037N08N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and qualification aligned to AEC-Q100 and JEDEC standards.

This part belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IPI037N08N3GHKSA1 at 100 °C case temperature?

The maximum continuous drain current is 100 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking with R_thJC = 0.7 K/W and junction temperature maintained ≤175 °C. Derating is not required up to this case temperature under steady-state conditions.

Does IPI037N08N3GHKSA1 have integrated ESD protection on the gate?

No, this MOSFET does not include integrated gate ESD protection. The gate oxide is rated for ±20 V maximum V_GS, and external gate resistors (typically 5–10 Ω) and TVS diodes are recommended in production designs to prevent damage from human-body-model (HBM) or charged-device-model (CDM) events during handling or operation.

Can IPI037N08N3GHKSA1 be used in linear mode (saturation region) for analog current regulation?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) graph shows limited DC capability, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at high V_DS × I_D products.

Is the drain tab electrically isolated from the package leads?

Yes, the drain tab in the PG-TO262-3 (IPAK) package is internally connected only to the drain terminal (Pin 3) and is electrically isolated from the source and gate leads. This allows direct mounting to a grounded heatsink without shorting the drain to system ground, simplifying thermal design in high-side or half-bridge configurations.

IPI037N08N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.75mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 155µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8110 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI037N08N3GHKSA1 FAQ

1.How can I place an order for IPI037N08N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI037N08N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI037N08N3GHKSA1 reliable?

The price and inventory of IPI037N08N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI037N08N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI037N08N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI037N08N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI037N08N3GHKSA1?

IPI037N08N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI037N08N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI037N08N3GHKSA1?

For technical support, including IPI037N08N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI037N08N3GHKSA1 requirements.

6.How does Aetrix verify that IPI037N08N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI037N08N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI037N08N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI037N08N3GHKSA1?

All IPI037N08N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI037N08N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI037N08N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPI037N08N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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