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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI037N08N3GXKSA1

Name: IPI037N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPI037N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI037N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI037N08N3GXKSA1.pdf

Description:: MOSFET N-CH 80V 100A TO262-3

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Inventory:7,395

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Product details

Overview

IPI037N08N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching in DC/DC converters, featuring 80 V V_DS, 3.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, 100% avalanche tested, and packaged in PG-TO262-3 (IPAK) for industrial power supply and motor control applications.

For engineers reviewing the IPI037N08N3GXKSA1 datasheet, IPI037N08N3GXKSA1 pinout, IPI037N08N3GXKSA1 application, or IPI037N08N3GXKSA1 equivalent, key selection criteria include gate charge (Q_g = 88–117 nC), thermal resistance (R_thJC = 0.7 K/W), reverse diode recovery (t_rr = 73 ns), and SOA robustness under pulsed drain current up to 400 A.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency synchronous rectification and hard-switched SMPS topologies. Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) supports standard 10 V gate drive while maintaining noise immunity.

Dynamic parameters-including C_iss = 6100–8110 pF, C_oss = 1640–2180 pF, and t_d(on)/t_r/t_d(off)/t_f = 23/79/45/14 ns-support operation above 500 kHz with controlled EMI and minimal switching loss in buck, half-bridge, and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus systems with 20 % derating margin
R_DS(on) max	3.5 mΩ @ V_GS = 10 V, I_D = 100 A - enables <1.5 W conduction loss at 100 A
Q_g	88–117 nC - determines gate driver power requirement and switching speed trade-off
t_rr	73 ns - limits reverse recovery loss in synchronous rectifier mode
R_thJC	0.7 K/W - allows 150 °C junction operation with ≤105 °C case temperature at 214 W P_tot
E_AS	510 mJ - ensures single-pulse avalanche ruggedness under inductive load turn-off
I_D,pulse	400 A - supports short-circuit withstand in motor phase-leg or UPS inverter designs

Pinout & Package

Package: PG-TO262-3 (IPAK), surface-mount variant of TO-262 with isolated drain tab, RoHS-compliant lead-free plating, and JEDEC-qualified reliability for industrial environments.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Power output terminal / heat sink interface	Electrically connected to PCB copper pour; primary thermal path to heatsink
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based overcurrent protection
Gate	Control input for channel modulation	Requires <2 Ω series resistance to damp ringing; sensitive to dv/dt coupling

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	Enables >96 % efficiency in 12 V–48 V input, 3.3 V–12 V output DC/DC converters at 300–600 kHz
100 % avalanche rated	Guarantees safe operation during inductive switching transients without external snubbers
Low Q_gd/Q_gs ratio	Reduces Miller-induced shoot-through risk in half-bridge configurations
Enhanced body diode softness	Minimizes voltage overshoot and EMI during commutation in synchronous rectification

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load regulation for CPU/GPU core supplies in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter with 500–800 kHz switching.

Use Value: 3.5 mΩ R_DS(on) reduces conduction loss by 32 % vs. legacy 5 mΩ devices, lowering thermal density in constrained airflow environments.

Use Scenario: Half-bridge leg in 3 kW BLDC inverter for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 80 A phase current with 400 A short-circuit pulse capability.

Use Value: 510 mJ E_AS rating eliminates need for external clamping circuits during fault conditions.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switch in 3.5 kW telecom rectifier with LLC resonance.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 200–300 kHz with ZVS-assisted turn-on.

Use Value: 73 ns t_rr and low C_oss enable reliable zero-voltage switching across full load range.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + DC/DC stage.

IC Role / Device Role / Timing Role: 80 V-rated switch supporting 400 V battery bus with 20 % safety margin.

Use Value: 0.7 K/W R_thJC allows direct mounting to aluminum cold plate, reducing thermal interface layers and system cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP037N08N3GXKSA1	TO-220 package, higher R_thJA (62 K/W), identical die and R_DS(on)	Better suited for forced-air cooled discrete designs with mechanical mounting constraints	Select when board space permits larger through-hole footprint and thermal management uses finned heatsinks
IPB035N08N3GXKSA1	D²PAK (TO-263) package, 3.5 mΩ R_DS(on) max, same V_DS and Q_g	Optimized for automated SMT assembly and higher power density layouts	Prefer for high-volume production where reflow compatibility and PCB area efficiency are critical

Compared with IPP037N08N3GXKSA1 and IPB035N08N3GXKSA1, IPI037N08N3GXKSA1 offers identical silicon performance in the IPAK (TO-262) form factor-providing a middle-ground thermal and assembly solution between through-hole and full SMT packages.

Availability

IPI037N08N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPI037N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q100 and JEDEC standards.

This device belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in enterprise computing, communications infrastructure, and industrial automation systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 1.6 Ω is specified in the datasheet for switching characterization (t_d(on), t_r, etc.). For practical designs, 2.2–4.7 Ω balances EMI suppression and switching loss. Values >10 Ω increase turn-on time significantly and risk shoot-through in bridge configurations due to prolonged Miller plateau crossing.

Is IPI037N08N3GXKSA1 suitable for linear-mode operation?

No. This MOSFET is optimized for switching applications only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability-maximum DC power dissipation in linear mode is <15 W at T_C = 25 °C, and it lacks guaranteed SOA robustness beyond single-pulse conditions per Figure 3.

Does the body diode support continuous bidirectional current in synchronous rectification?

Yes-the device's body diode is rated for 100 A continuous forward current (I_S) and 400 A pulsed (I_S,pulse). However, its V_SD = 1.0–1.2 V at 100 A and t_rr = 73 ns require careful gate timing to avoid cross-conduction losses in synchronous rectifier control schemes.

How does R_DS(on) vary with temperature, and what is its impact on thermal design?

R_DS(on) increases linearly with junction temperature: from 3.1 mΩ at 25 °C to ~6.0 mΩ at 175 °C. At 100 A, conduction loss rises from 31 W to ~60 W-requiring thermal design that maintains T_J ≤125 °C for sustained operation, especially under high ambient or limited airflow conditions.

IPI037N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.75mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 155µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8110 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI037N08N3GXKSA1 FAQ

1.How can I place an order for IPI037N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI037N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI037N08N3GXKSA1 reliable?

The price and inventory of IPI037N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI037N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI037N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI037N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI037N08N3GXKSA1?

IPI037N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI037N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI037N08N3GXKSA1?

For technical support, including IPI037N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI037N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPI037N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI037N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI037N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI037N08N3GXKSA1?

All IPI037N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI037N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI037N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPI037N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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