Infineon Technologies IPI040N06N3GHKSA1

Overview

IPI040N06N3GHKSA1 from Infineon Technologies is a 60 V, 90 A, 4.0 mΩ N-channel TrenchMOS™ power MOSFET in TO-262-3 (IPAK) package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPI040N06N3GHKSA1 datasheet, IPI040N06N3GHKSA1 pinout, IPI040N06N3GHKSA1 application, or IPI040N06N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, peak pulsed drain current rating, thermal resistance (R_thJC), avalanche ruggedness, and gate charge (Q_g) for switching loss estimation.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3rd generation Trench technology, delivering low conduction losses with a typical R_DS(on) of 4.0 mΩ at V_GS = 10 V and I_D = 50 A. It features 100% avalanche-tested ruggedness and a gate threshold voltage (V_GS(th)) of 2.0–4.0 V.

The device supports logic-level gate drive compatibility down to 4.5 V, enabling direct interfacing with PWM controllers in high-frequency buck converters. Its SOA is characterized up to T_C = 25 °C and includes repetitive avalanche energy rating (E_AS = 470 mJ).

Key Specifications

Pinout & Package

Package: TO-262-3 (IPAK), surface-mount variant of TO-220 with isolated tab, rated for 100 W dissipation at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6F7AG, IPI040N06N3GHKSA1 offers lower gate charge for faster switching and TO-262 thermal performance matching TO-220 footprints; IXTP44N60P is electrically unsuitable due to voltage-class mismatch and 16× higher R_DS(on).

Availability

IPI040N06N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPI040N06N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors.

IPI040N06N3GHKSA1 belongs to the OptiMOS™ 3rd generation power MOSFET product line, engineered for high-efficiency, high-current DC-DC conversion in datacenter and communications infrastructure.

FAQ

What is the maximum safe operating temperature for IPI040N06N3GHKSA1?

The device has a maximum junction temperature (T_J) of 175 °C. At T_C = 25 °C, it supports 90 A continuous drain current. Derating begins above 25 °C case temperature per the datasheet's linear derating curve, reaching zero current at T_C = 115 °C. Thermal design must maintain T_J ≤ 175 °C under worst-case ambient and airflow conditions.

Does IPI040N06N3GHKSA1 require a gate resistor for stability?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen gate ringing caused by PCB trace inductance and MOSFET input capacitance. Without it, overshoot exceeding 20 V can trigger parasitic turn-on or oscillation. The 64 nC Q_g and 1.2 nH typical package inductance make external gate resistance critical for clean 1–2 MHz switching.

Is the drain tab electrically isolated in TO-262-3 packaging?

No-the metal tab is internally connected to the drain terminal and is not electrically isolated. Mounting requires either an insulating thermal pad with dielectric strength ≥1 kV or mechanical isolation via non-conductive standoff hardware. Standard thermal paste alone does not provide electrical isolation.

Can IPI040N06N3GHKSA1 replace IPI039N06N5 in existing designs?

Yes, with validation: both share TO-262-3 packaging and 60 V rating, but IPI040N06N3GHKSA1 has 4.0 mΩ R_DS(on) vs. 3.9 mΩ for IPI039N06N5, and Q_g is 64 nC vs. 60 nC. Layout and gate drive timing should be rechecked, especially for <500 ns dead-time margins, due to minor parameter shifts.