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Infineon Technologies IPI04N03LA

Part No.:
IPI04N03LA
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI04N03LA.pdf
Description:
MOSFET N-CH 25V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,467

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Product details

Overview

IPI04N03LA from Infineon Technologies is a 25 V, 4.2 mΩ N-channel logic-level Power MOSFET in PG-TO262-3 package, optimized for high-frequency DC/DC converters and synchronous rectification. It delivers 80 A continuous drain current at TC = 25 °C, features 1.4 K/W junction-to-case thermal resistance, and supports 175 °C operation with dv/dt ruggedness up to 6 kV/μs.

For engineers reviewing the IPI04N03LA datasheet, IPI04N03LA pinout, IPI04N03LA application, or IPI04N03LA equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, gate charge (Qg = 24–32 nC), avalanche energy (EAS = 290 mJ), and thermal performance in TO262-3 mounting configurations.

Technical Context

This OptiMOS®2 device uses trench-gate silicon technology to achieve low RDS(on) × Qg figure-of-merit (FOM) for efficient switching in hard-switched and resonant topologies. Its logic-level gate threshold (VGS(th) = 1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The MOSFET integrates a robust body diode with Qrr = 15 nC and VSD = 0.96–1.2 V at 80 A, supporting synchronous rectification in buck, boost, and LLC converters. Its 6 kV/μs dv/dt rating ensures immunity to parasitic turn-on in high-dI/dt environments.

Key Specifications

ParameterValue and Actual Design Meaning
VDS25 V - Maximum blocking voltage for 12 V input rail systems with margin
RDS(on) max4.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 80 A in thermally optimized layouts
ID cont.80 A @ TC = 25 °C - Limited by bondwire; requires heatsink for sustained current
Qg24–32 nC - Determines gate driver power requirement and switching speed trade-off
EAS290 mJ - Supports unclamped inductive switching in converter primary-side snubbers
RthJC1.4 K/W - Enables precise junction temperature estimation from case measurement
dv/dt rating6 kV/μs - Prevents false turn-on during fast voltage transients in high-side switching

Pinout & Package

PG-TO262-3 package: isolated tab (drain), 3-pin through-hole outline with drain-connected metal tab for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalAccepts logic-level gate drive; low input capacitance (Ciss = 2915–3877 pF) reduces driver loading
Pin 2 (Drain / Tab)High-current output nodeElectrically and thermally connected to metal tab; must be mounted to heatsink with insulating pad if isolation required
Pin 3 (Source)Reference node for gate driveServes as return path for gate current and load current; critical for stable gate loop layout

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.2–2.0 V enables direct interface with 3.3 V microcontrollers and PWM ICs
Low RDS(on) × Qg FOM~100 mΩ·nC - balances conduction and switching losses in 300–1000 kHz DC/DC designs
175 °C rated junctionSupports operation in sealed enclosures or high-ambient industrial environments without derating
Robust body diodeQrr = 15 nC and soft recovery reduce EMI and voltage overshoot in synchronous rectifier mode
Pb-free & RoHS compliantMeets EU Directive 2011/65/EU; compatible with lead-free reflow and wave soldering processes

Applications

Server VRMsIndustrial DC/DC Modules

Use Scenario: Point-of-load (POL) buck converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 500–800 kHz with 3.3 V gate drive.

Use Value: 4.2 mΩ RDS(on) minimizes conduction loss under 60–80 A transient loads; 1.4 K/W RthJC enables compact heatsink integration.

Use Scenario: Isolated 48 V-to-12 V DC/DC converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Low Qrr (15 nC) and soft reverse recovery suppress ringing and reduce EMI filter size.

Telecom RectifiersAutomotive DC/DC Converters

Use Scenario: 48 V input telecom rectifier module delivering 12 V/40 A to base station subsystems.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge LLC resonant converter.

Use Value: 6 kV/μs dv/dt rating prevents spurious turn-on during ZVS transitions; 290 mJ EAS handles leakage inductance spikes.

Use Scenario: 12 V-to-5 V/3.3 V step-down converter in automotive infotainment head unit.

IC Role / Device Role / Timing Role: Low-voltage synchronous buck switch with 5 V gate drive from automotive PMIC.

Use Value: 175 °C rating ensures reliability across -40 °C to +125 °C ambient; logic-level threshold eliminates external level shifter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP04N03LAIdentical die, PG-TO220-3 package; RthJC = 1.4 K/W same, but higher RthJA due to smaller footprintBetter suited for prototyping or lower-power designs where TO220 heatsinking sufficesSelect when board space allows TO220 mounting and thermal budget permits higher RthJA
IPB04N03LASame OptiMOS®2 die in PG-TO252-3 (DPAK); RthJC = 2.5 K/W, lower current rating (60 A)Targeted at space-constrained SMT applications with moderate thermal demandChoose for surface-mount assembly where TO262-3 through-hole is not feasible

Compared with IPP04N03LA and IPB04N03LA, IPI04N03LA offers identical electrical performance in a PG-TO262-3 package optimized for high-current, high-reliability through-hole mounting with superior thermal coupling to large heatsinks.

Availability

IPI04N03LA is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom rectifiers requiring stable component supply and long-term manufacturability.

Supply support for IPI04N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IPI04N03LA belongs to the OptiMOS®2 logic-level Power MOSFET product line, designed specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum gate-source voltage for IPI04N03LA?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable logic-level drive, keep VGS between 4.5 V and 10 V; the gate plateau voltage is 3.3 V, confirming strong turn-on behavior at low drive levels.

Can IPI04N03LA be used in synchronous rectification without an external Schottky diode?

Yes. Its integrated body diode has Qrr = 15 nC and VSD = 0.96–1.2 V at 80 A and 25 °C, enabling direct use in synchronous rectifier configurations. No external diode is needed, though layout must minimize source inductance to avoid shoot-through during dead-time transitions.

How does thermal resistance differ between IPI04N03LA and IPP04N03LA?

Both share identical RthJC = 1.4 K/W, but IPI04N03LA's PG-TO262-3 package achieves lower effective RthJA (40 K/W with 6 cm² copper) versus IPP04N03LA's PG-TO220-3 (62 K/W same condition), due to larger thermal pad area and improved heatsink contact geometry.

Is IPI04N03LA suitable for automotive AEC-Q101 qualification?

No. While rated for 175 °C operation and JEDEC-qualified for target applications, IPI04N03LA is not AEC-Q101 qualified. For automotive-grade use, consider Infineon's AEC-Q101-qualified OptiMOS™ 5 variants such as IPB04N03L3 G, which offer similar RDS(on) with full automotive qualification.

IPI04N03LA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:
2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3877 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI04N03LA FAQ

1.How can I place an order for IPI04N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI04N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI04N03LA reliable?

The price and inventory of IPI04N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI04N03LA is usually 5 days.

3.What payment methods are accepted for IPI04N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI04N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI04N03LA?

IPI04N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI04N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI04N03LA?

For technical support, including IPI04N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI04N03LA requirements.

6.How does Aetrix verify that IPI04N03LA is sourced from the original manufacturer or authorized distributors?

All IPI04N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI04N03LA meets industry standards.

7.What is the process for return or replacement of IPI04N03LA?

All IPI04N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPI04N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI04N03LA part is unused and in its original packaging.

Return procedure for IPI04N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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