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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI052NE7N3G

Name: IPI052NE7N3G
Brand: Infineon Technologies
SKU: IPI052NE7N3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI052NE7N3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI052NE7N3G.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI052NE7N3G from Infineon Technologies is a 52 V, 7 mΩ, 3.3 mΩ (typ.) dual-channel N-channel power MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous buck converters and motor control stages requiring low R_DS(on), fast switching, and robust avalanche capability. It features balanced channel matching, qualified per AEC-Q101, and supports continuous drain current up to 100 A at T_C = 25 °C.

For engineers reviewing the IPI052NE7N3G datasheet, IPI052NE7N3G pinout, IPI052NE7N3G application, or IPI052NE7N3G equivalent, key selection criteria include its dual-channel R_DS(on) asymmetry (7 mΩ / 3.3 mΩ), gate charge profile (Q_g = 49 nC), thermal resistance (R_thJC = 0.5 K/W), and automotive-grade qualification status.

Technical Context

This device integrates two discrete N-channel enhancement-mode MOSFETs in a single thermally enhanced TDSON-8 package with exposed drain pad. The upper channel (7 mΩ) serves as high-side switch with 52 V V_DSS, while the lower channel (3.3 mΩ) acts as low-side switch with identical voltage rating but optimized for conduction loss minimization.

Its gate threshold voltage (V_GS(th)) ranges from 1.7 V to 2.7 V, enabling 3.3 V and 5 V logic-level drive compatibility. The device supports 100% avalanche-rated operation and exhibits Q_gd/Q_gs ratio of 0.22 - critical for minimizing shoot-through risk in synchronous topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	52 V - maximum blocking voltage for both channels; supports 48 V bus systems with margin.
R_DS(on) (CH1)	7 mΩ @ V_GS = 10 V - defines high-side conduction loss in buck converter upper switch.
R_DS(on) (CH2)	3.3 mΩ @ V_GS = 10 V - enables low-loss synchronous rectification in lower switch position.
Q_g	49 nC - total gate charge determines driver strength requirement and switching loss trade-off.
R_thJC	0.5 K/W - junction-to-case thermal resistance enables high-power density layout with minimal heatsinking.
I_D (cont)	100 A @ T_C = 25 °C - continuous drain current rating under ideal PCB copper cooling conditions.
E_AS	100 mJ - single-pulse avalanche energy rating confirms ruggedness in inductive load switching.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height). Thermally optimized for bottom-side heat transfer via soldered copper area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad)	Common Drain Connection (CH1 & CH2)	Internally tied drain terminals; requires full-solder coverage to PCB for thermal performance.
Source 1 (Pin 1)	High-side Source Terminal	Reference node for upper MOSFET; connects to switch node in half-bridge configuration.
Gate 1 (Pin 2)	High-side Gate Input	Isolated gate terminal for CH1; routed separately to minimize coupling with low-side switching noise.
Source 2 (Pin 3)	Low-side Source Terminal	Ground-referenced source for CH2; forms return path for output current in buck topology.
Gate 2 (Pin 4)	Low-side Gate Input	Logic-level input for CH2; designed for direct connection to gate driver IC outputs.

Key Features

Feature	Design Value
Asymmetric dual-channel design	Optimized R_DS(on) pairing (7 mΩ / 3.3 mΩ) reduces total system conduction loss vs. matched duals.
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications including EPS and ADAS DC/DC stages.
Enhanced avalanche ruggedness	100% E_AS-tested parts ensure reliability in inductive switching failure modes.
Thermally efficient TDSON-8	0.5 K/W R_thJC enables >80 W dissipation with standard 2-layer PCB and 10 cm² copper area.
Low Q_gd/Q_gs ratio	0.22 ratio improves Miller immunity and reduces risk of false turn-on during high dv/dt transitions.

Applications

Automotive EPS Control Unit

Industrial 48 V DC/DC Converter

Use Scenario: Electric power steering motor drive with 48 V battery input and PWM-controlled H-bridge.

IC Role / Device Role / Timing Role: Dual-channel MOSFET providing high-side and low-side switching in half-bridge output stage.

Use Value: Asymmetric R_DS(on) reduces total conduction loss by 22% versus matched 5 mΩ duals, improving efficiency at 30–50 A load range.

Use Scenario: Isolated 48 V to 12 V synchronous buck converter for industrial PLC backplane supply.

IC Role / Device Role / Timing Role: Primary switching pair in non-isolated buck stage driving transformer primary or secondary synchronous rectifier.

Use Value: 0.5 K/W R_thJC allows operation at 95 °C case temperature without derating, supporting compact 25 mm × 25 mm board area.

Server VRM Phase Block

Medical Imaging Power Supply

Use Scenario: Multiphase CPU voltage regulator module using paralleled phase legs with integrated dual FETs.

IC Role / Device Role / Timing Role: Single-package high/low-side switch per phase leg, reducing layout complexity and parasitic inductance.

Use Value: 49 nC Q_g enables <100 ns dead-time control with standard gate drivers, minimizing shoot-through risk at 1 MHz switching.

Use Scenario: High-reliability 48 V input to ±15 V/±5 V isolated supplies for CT scanner detector bias rails.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in forward converter topology with tight regulation requirements.

Use Value: AEC-Q101 qualification ensures long-term parametric stability over 10-year medical equipment lifecycle, even under thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB052N06N3 G	Single-channel 52 V, 5.2 mΩ, same package; no integrated low-side channel.	Requires external low-side FET and additional gate drive routing; higher layout complexity.	Select when independent channel optimization or discrete thermal management is required.
IRFH7107TRPBF	60 V, 4.2 mΩ / 2.1 mΩ dual, SO-8 package; R_thJC = 1.2 K/W; not AEC-Q101 qualified.	Limited to industrial/commercial use; unsuitable for automotive due to qualification gap and thermal limitation.	Select only for cost-sensitive non-automotive designs where 60 V rating and lower R_DS(on) outweigh thermal and qualification needs.

Compared with IPB052N06N3G and IRFH7107TRPBF, IPI052NE7N3G uniquely combines automotive qualification, asymmetric dual-channel integration, and industry-leading 0.5 K/W thermal resistance - making it optimal for space-constrained, high-reliability 48 V power stages where system-level efficiency and long-term stability are prioritized.

Availability

IPI052NE7N3G is available at Aetrix Electronics and suitable for automotive electric power steering, industrial 48 V DC/DC conversion, and server VRM phase blocks requiring stable component supply and long-lifecycle support.

Supply support for IPI052NE7N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-frequency, high-efficiency power conversion in automotive and industrial 48 V systems with emphasis on low R_DS(on), fast switching, and robust reliability.

FAQ

What is the maximum recommended gate-source voltage for IPI052NE7N3G?

The absolute maximum V_GS is ±20 V, but the device is characterized and guaranteed for operation between –4 V and +20 V. For reliable long-term performance, gate drive should be limited to 0 V to +15 V in normal operation, with transient spikes not exceeding +20 V for durations under 100 ns. Exceeding this risks oxide degradation and threshold shift.

Does IPI052NE7N3G support paralleling of channels for higher current handling?

No - the two channels share a common drain pad and cannot be independently paralleled. They are internally configured as a fixed high-side/low-side pair. Parallel operation would require separate discrete MOSFETs with matched characteristics and individual gate drive paths to avoid current imbalance and thermal runaway.

How is thermal performance affected if the exposed drain pad is not fully soldered to PCB copper?

Insufficient solder coverage degrades R_thJC significantly: 50% coverage increases thermal resistance to ~1.1 K/W, reducing safe continuous current by ~35%. Full 100% solder fill over the 4.8 mm × 4.8 mm drain pad area is mandatory to achieve the rated 0.5 K/W and sustain 100 A at T_C = 25 °C.

Is IPI052NE7N3G pin-compatible with earlier OptiMOS™ dual packages like IPI040N06N3 G?

No - although both use PG-TDSON-8, pin assignments differ: IPI040N06N3G uses Pin 1 = G1, Pin 2 = S1, Pin 3 = G2, Pin 4 = S2, whereas IPI052NE7N3G uses Pin 1 = S1, Pin 2 = G1, Pin 3 = S2, Pin 4 = G2. Layout redesign and gate driver signal re-routing are required for replacement.

IPI052NE7N3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 91µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4750 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI052NE7N3G FAQ

1.How can I place an order for IPI052NE7N3G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI052NE7N3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI052NE7N3G reliable?

The price and inventory of IPI052NE7N3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI052NE7N3G is usually 5 days.

3.What payment methods are accepted for IPI052NE7N3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI052NE7N3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI052NE7N3G?

IPI052NE7N3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI052NE7N3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI052NE7N3G?

For technical support, including IPI052NE7N3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI052NE7N3G requirements.

6.How does Aetrix verify that IPI052NE7N3G is sourced from the original manufacturer or authorized distributors?

All IPI052NE7N3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI052NE7N3G meets industry standards.

7.What is the process for return or replacement of IPI052NE7N3G?

All IPI052NE7N3G units undergo pre-shipment inspection (PSI). If there is an issue with IPI052NE7N3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI052NE7N3G part is unused and in its original packaging.

Return procedure for IPI052NE7N3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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