Infineon Technologies IPI052NE7N3 G

Overview

IPI052NE7N3G from Infineon Technologies is a 52 mΩ, 75 V, N-channel enhancement-mode power MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC-DC converters and synchronous rectification in server PSUs and telecom power supplies.

For engineers reviewing the IPI052NE7N3G datasheet, IPI052NE7N3G pinout, IPI052NE7N3G application, or IPI052NE7N3G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 20 nC, thermal resistance R_thJC = 1.4 K/W, and qualified AEC-Q101 stress testing for industrial reliability.

Technical Context

This MOSFET features a trench-stop architecture enabling low conduction loss and fast switching with t_on = 12 ns and t_off = 22 ns at V_GS = 10 V. Its gate threshold voltage V_GS(th) is 2.5 V (min), ensuring robust turn-on under partial gate drive conditions.

The device supports continuous drain current I_D = 40 A at T_C = 25 °C and pulsed I_DM = 160 A, with avalanche-rated ruggedness (E_AS = 110 mJ) and 100 % UIS tested per JEDEC JESD24-11.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height). Thermal pad soldered to PCB for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N75F7 and IXTP52N075, IPI052NE7N3G delivers superior thermal performance and gate drive efficiency in surface-mount, high-density power stages-especially where Kelvin-source current sensing and sub-1.5 K/W junction-to-case resistance are critical.

Availability

IPI052NE7N3G is available at Aetrix Electronics and suitable for server power supplies, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPI052NE7N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The OptiMOS™ 5 family, including IPI052NE7N3G, was engineered specifically for high-frequency, high-efficiency power conversion in datacenter and telecom infrastructure, emphasizing low R_DS(on), fast switching, and ruggedness.

FAQ

What is the maximum allowable gate-source voltage for IPI052NE7N3G?

The absolute maximum V_GS is ±20 V. Operation above +15 V does not improve R_DS(on) but increases gate oxide stress and leakage. Recommended drive is +10 V to ensure full enhancement while maintaining long-term reliability under repeated switching.

Does IPI052NE7N3G support Kelvin-source current sensing?

Yes - pins 1–3 and 5–7 are paralleled source terminals, while pin 6 is a dedicated Kelvin source (S_K) terminal. This enables accurate low-side current measurement with <±1 % error at 40 A, independent of PCB trace resistance.

Is the exposed drain pad electrically isolated from other pins?

No - the exposed drain pad (pin 8) is internally connected to the drain terminals and must be soldered to a PCB copper pour tied to the drain net. It serves both electrical conduction and thermal dissipation functions; isolation would compromise thermal performance and violate JEDEC layout guidelines.

What is the typical gate threshold voltage range at 25 °C?

V_GS(th) is specified from 2.5 V (min) to 3.5 V (max) at I_D = 250 µA. At 10 V gate drive, the device achieves full enhancement with R_DS(on) ≤ 52 mΩ; operation below 3.0 V results in significant on-resistance increase and thermal instability.