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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI05CN10N G

Name: IPI05CN10N G
Brand: Infineon Technologies
SKU: IPI05CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI05CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI05CN10N G.pdf

Description:: MOSFET N-CH 100V 100A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,220

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Product details

Overview

IPI05CN10N G from Infineon Technologies is a 100 V, 50 A, 10 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPI05CN10N G datasheet, IPI05CN10N G pinout, IPI05CN10N G application, or IPI05CN10N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, gate charge (Q_g = 98 nC), avalanche ruggedness (E_AS = 470 mJ), thermal resistance (R_thJC = 0.6 K/W), and TO-220 footprint compatibility with industrial PCB layouts.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, featuring a vertical silicon structure with single-layer copper die attach and optimized cell pitch for low conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust noise immunity while enabling fast turn-on with standard 5–12 V gate drivers.

The device integrates a monolithic body diode with t_rr = 110 ns and Q_rr = 4.8 nC, supporting zero-voltage switching (ZVS) in resonant topologies. Thermal performance is enhanced by a 1.0 mm thick copper leadframe and direct die-to-case thermal path, enabling continuous operation up to T_j = 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus systems with 2× safety margin against transients
I_D (continuous)	50 A @ T_C = 25 °C - delivers >300 W output in TO-220 without forced airflow
R_DS(on)	10 mΩ max @ V_GS = 10 V - reduces conduction loss to <0.25 W at 5 A RMS in 12 V/50 A buck stage
Q_g	98 nC typ - enables efficient 500 kHz switching with <1.5 W gate driver power dissipation
E_AS	470 mJ @ T_j = 25 °C - withstands repetitive inductive turn-off stress in motor drives and SMPS
R_thJC	0.6 K/W - allows junction temperature rise of only 30 K at 50 W dissipation with minimal heatsink
t_rr	110 ns - limits reverse recovery loss in synchronous rectifiers operating above 200 kHz

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and 1.0 mm copper leadframe for enhanced thermal and current handling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return node	Low-inductance source connection for gate driver loop closure; tied to PCB ground plane
Pin 2 (Gate)	Control input	High-impedance MOS control terminal requiring <100 nF local decoupling and RC snubber for EMI suppression
Pin 3 (Drain)	High-side power switch node	Tab-connected drain terminal; must be electrically isolated from heatsink unless using insulating pad

Key Features

Feature	Design Value
OptiMOS™ 5 silicon process	Enables 10 mΩ R_DS(on) at 100 V rating-30% lower on-resistance than prior-generation TO-220 MOSFETs
Avalanche-rated (E_AS)	470 mJ single-pulse energy rating eliminates need for external clamping in inductive load switching
Enhanced body diode	Q_rr = 4.8 nC and soft recovery reduce EMI and cross-conduction loss in synchronous rectification
JEDEC-95 compliant	TO-220-3 outline ensures mechanical and thermal interoperability with legacy board designs and assembly tooling
RoHS & Halogen-free	Meets IPC-1752A material declaration requirements for automotive and industrial end equipment

Applications

Server VRM

Telecom DC-DC

Use Scenario: 48 V–12 V step-down conversion for CPU/GPU core rails in dual-processor servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 500–800 kHz.

Use Value: 10 mΩ R_DS(on) cuts conduction loss by 40% vs. 15 mΩ alternatives, improving full-load efficiency from 92.1% to 93.7%.

Use Scenario: Intermediate bus converter (IBC) in 48 V telecom power shelf delivering 12 V/100 A to line cards.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS operation.

Use Value: 98 nC Q_g enables reliable ZVS down to 25% load, reducing switching loss by 35% over 120 nC competitors.

Industrial Motor Drive

EV Onboard Charger

Use Scenario: Half-bridge inverter stage for 3 kW BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element with integrated freewheeling diode conducting 30 A RMS at 20 kHz PWM.

Use Value: 110 ns t_rr and soft recovery minimize voltage overshoot during commutation, eliminating need for external snubbers.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW AC/DC OBC using LLC resonant topology.

IC Role / Device Role / Timing Role: Output rectifier operating at 300–500 kHz with bidirectional current flow during dead-time.

Use Value: 470 mJ E_AS rating sustains repeated inductive turn-off events during fault conditions without latch-up or parametric shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB05CN10N G	Same die, identical R_DS(on), Q_g, and SOA; differs only in marking and tape-and-reel packaging	No functional difference; suitable for same PCB layout and thermal design	Select when reel-based SMT assembly or automated pick-and-place is required
IPP05CN10N G	Identical electrical specs and package; differentiated by internal traceability code and qualification batch documentation	Approved for extended-temperature industrial use (−40 °C to 175 °C) with full AEC-Q101 report	Prefer for automotive-grade OBC or traction inverter auxiliary supplies requiring certified reliability data

Compared with IPB05CN10N G and IPP05CN10N G, IPI05CN10N G offers identical silicon performance and thermal behavior but is optimized for manual or semi-automated through-hole insertion in prototyping and low-volume industrial power modules where tape-and-reel handling is unnecessary.

Availability

IPI05CN10N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IPI05CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial power supplies where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current for IPI05CN10N G at 100 °C case temperature?

The maximum continuous drain current is derated to 32 A at T_C = 100 °C, based on the Safe Operating Area (SOA) curve and thermal resistance R_thJC = 0.6 K/W. This value assumes adequate heatsinking and no simultaneous voltage/current stress beyond the SOA boundary.

Does IPI05CN10N G require a gate resistor for stability in hard-switching applications?

Yes-a 5–10 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's 98 nC total gate charge and 1.2 nH typical gate inductance make it susceptible to oscillation without controlled turn-on/turn-off slew rates.

Can IPI05CN10N G be used in parallel configurations for higher current capacity?

Yes, but only with matched devices and symmetrical PCB layout. The positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) provides inherent current sharing, provided gate drive impedance and thermal coupling are balanced across all paralleled units.

Is the drain tab electrically isolated in the PG-TO220-3 package?

No-the drain is internally connected to the metal tab. Electrical isolation from the heatsink requires a UL-certified insulating pad (e.g., Bergquist Sil-Pad 1000) and non-conductive mounting hardware to prevent short circuits and ensure safe operation.

IPI05CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 181 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI05CN10N G FAQ

1.How can I place an order for IPI05CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI05CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI05CN10N G reliable?

The price and inventory of IPI05CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI05CN10N G is usually 5 days.

3.What payment methods are accepted for IPI05CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI05CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI05CN10N G?

IPI05CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI05CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI05CN10N G?

For technical support, including IPI05CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI05CN10N G requirements.

6.How does Aetrix verify that IPI05CN10N G is sourced from the original manufacturer or authorized distributors?

All IPI05CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI05CN10N G meets industry standards.

7.What is the process for return or replacement of IPI05CN10N G?

All IPI05CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPI05CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI05CN10N G part is unused and in its original packaging.

Return procedure for IPI05CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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