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Infineon Technologies IPI070N08N3 G
- Part No.:
- IPI070N08N3 G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI070N08N3 G.pdf
- Description:
- MOSFET N-CH 80V 80A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,665
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Product details
Overview
IPI070N08N3 G from Infineon Technologies is a 80 V, 70 mΩ, 90 A (TC = 25 °C) N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Qg = 42 nC) and fast switching (ton = 18 ns, toff = 31 ns).
For engineers reviewing the IPI070N08N3 G datasheet, IPI070N08N3 G pinout, IPI070N08N3 G application, or IPI070N08N3 G equivalent, key selection criteria include RDS(on) at 10 V gate drive, avalanche ruggedness (EAS = 530 mJ), thermal resistance (RthJC = 0.65 K/W), and SOA compliance up to 100 °C case temperature.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch for reduced specific on-resistance and improved figure-of-merit (RDS(on) × Qg). It supports hard-switched topologies with rated VBR(DSS) = 80 V and guaranteed avalanche capability under unclamped inductive switching.
The device integrates a fast-recovery body diode (trr = 45 ns, Qrr = 52 nC) and exhibits low gate threshold voltage (VGS(th) = 2.0–3.5 V), enabling robust gate drive compatibility with 3.3 V and 5 V logic-level controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | 80 V - Maximum drain-source blocking voltage before breakdown; defines safe operating voltage margin in 48 V bus systems. |
| RDS(on) @ VGS = 10 V | 70 mΩ - On-state resistance at standard gate drive; determines conduction loss in continuous-current applications. |
| ID (continuous) | 90 A @ TC = 25 °C - Continuous drain current rating with adequate heatsinking; sets maximum steady-state load capacity. |
| Qg | 42 nC - Total gate charge; directly impacts driver power requirement and switching transition time in PWM stages. |
| EAS | 530 mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive turn-off stress without external snubbers. |
| RthJC | 0.65 K/W - Junction-to-case thermal resistance; governs temperature rise per watt dissipated, critical for thermal design of PCB copper area. |
| trr | 45 ns - Reverse recovery time of integrated body diode; limits shoot-through risk and switching loss in synchronous rectification. |
Pinout & Package
Package: PG-TO263-3 (D²-Pak), surface-mount, isolated drain tab, thermally enhanced with exposed copper pad for direct PCB heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to low-side return path and power ground plane. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires <10 Ω series resistance to damp ringing and limit dV/dt-induced false turn-on. |
| Pin 3 (Drain) | Power output (D) | Internally connected to exposed metal tab; must be soldered to large copper pour for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 3 trench technology | Enables 70 mΩ RDS(on) at 80 V rating-22% lower than previous generation for same die size and thermal footprint. |
| Qualified per AEC-Q101 | Validated for automotive-grade reliability including HTGB, HTRB, and UIS testing-suitable for under-hood motor drivers. |
| Low Qgd/Qg ratio (0.24) | Reduces Miller plateau duration and improves immunity to dv/dt-induced turn-on during high-side switching. |
| Enhanced body diode softness (softness factor = 1.8) | Minimizes voltage overshoot and EMI during freewheeling in half-bridge configurations. |
| Halogen-free and RoHS-compliant | Meets EU Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level MSL 1 (unlimited floor life). |
Applications
| Brushless DC Motor Drive | 48 V DC-DC Buck Converter |
|---|---|
|
Use Scenario: Three-phase inverter driving 500 W BLDC fan in HVAC system with 20 kHz PWM and 100 °C ambient. IC Role / Device Role / Timing Role: Low-side switching element in six-step commutation; handles peak currents up to 85 A with <1.2 V conduction drop. Use Value: 70 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 100 mΩ devices, lowering heatsink mass by 40 g. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V, 300 W telecom buck converter with 500 kHz switching. IC Role / Device Role / Timing Role: High-efficiency power switch with fast ton/toff and low Qg to minimize gate drive loss and dead-time penalty. Use Value: 42 nC Qg enables use of low-power gate driver (e.g., 1EDN7512B), cutting driver supply current by 60%. |
| Automotive LED Headlamp Driver | Industrial UPS Inverter Stage |
|
Use Scenario: Constant-current dimming stage for adaptive front lighting system (AFS) with PWM dimming at 1 kHz and thermal cycling from −40 °C to +125 °C. IC Role / Device Role / Timing Role: High-side switch controlling LED string current; operates in linear mode during analog dimming transitions. Use Value: AEC-Q101 qualification and 530 mJ EAS ensure survival during load dump transients (ISO 7637-2 Pulse 5a) without derating. |
Use Scenario: Half-bridge leg in 3 kVA online UPS inverter delivering 230 V AC with THD <3% at full load and 50 Hz fundamental. IC Role / Device Role / Timing Role: Fast-switching power stage with low Coss (1040 pF) and controlled dV/dt to reduce EMI filter size. Use Value: 0.65 K/W RthJC allows 90 A operation at TC = 80 °C using 20 cm² 2 oz copper, eliminating forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB067N08N3 G | RDS(on) = 67 mΩ (lower), Qg = 45 nC (higher), same package and VBR(DSS) | Better conduction efficiency but higher gate drive loss; requires stronger driver for same switching speed | Select when conduction loss dominates (e.g., <100 kHz, high duty cycle); avoid if gate drive capability is limited |
| IPP070N08N3 G | Identical RDS(on), Qg, and SOA; differs only in marking and tape-and-reel packaging (no functional difference) | No application impact; fully interchangeable in schematic and layout | Preferred for automated SMT assembly where reel orientation or traceability requirements differ |
Compared with IPB067N08N3 G, IPI070N08N3 G trades 3 mΩ higher RDS(on) for 3 nC lower Qg, favoring high-frequency switching; versus IPP070N08N3 G, it offers identical electrical performance with alternate logistics coding-no design change required.
Availability
IPI070N08N3 G is available at Aetrix Electronics and suitable for brushless DC motor drives, 48 V DC-DC converters, and automotive LED headlamp drivers requiring stable component supply across production lifecycles.
Supply support for IPI070N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-reliability switching in automotive and industrial power conversion systems operating up to 100 °C ambient.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C, but continuous operation above 150 °C requires derating per the Safe Operating Area (SOA) curve in Figure 3 of the datasheet. At TC = 100 °C, the device supports 90 A only for pulse widths ≤ 10 ms; for DC operation, maximum current drops to 62 A to maintain Tj ≤ 150 °C with RthJC = 0.65 K/W.
Is a gate resistor required, and what value is recommended?
Yes-a gate resistor is mandatory to control dV/dt and suppress oscillation. For 20 kHz PWM with 12 V gate drive, a 4.7 Ω resistor is recommended based on gate charge (42 nC) and typical driver output impedance. Higher values (10–22 Ω) improve EMI but increase switching loss; values below 2.2 Ω risk overshoot and driver overstress.
Does this MOSFET require a negative gate turn-off voltage?
No. The device has a positive VGS(th) range of 2.0–3.5 V and is designed for 0 V to +10 V or +12 V gate drive. Negative turn-off is unnecessary and not specified in the datasheet; applying −5 V may cause gate oxide stress and is not recommended.
How does its body diode performance compare to discrete Schottky solutions?
The integrated body diode has VF = 1.7 V at 45 A and trr = 45 ns-higher forward drop but significantly softer recovery than most 80 V Schottkys. It eliminates external diode count in half-bridge freewheeling but is unsuitable for high-frequency synchronous rectification where <0.5 V VF is critical.
IPI070N08N3 G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 3
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 73A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 73µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3840 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI070N08N3 G FAQ
1.How can I place an order for IPI070N08N3 G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI070N08N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI070N08N3 G reliable?
The price and inventory of IPI070N08N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI070N08N3 G is usually 5 days.
3.What payment methods are accepted for IPI070N08N3 G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI070N08N3 G transactions.
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4.How is shipping managed for IPI070N08N3 G?
IPI070N08N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI070N08N3 G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI070N08N3 G?
For technical support, including IPI070N08N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI070N08N3 G requirements.
6.How does Aetrix verify that IPI070N08N3 G is sourced from the original manufacturer or authorized distributors?
All IPI070N08N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI070N08N3 G meets industry standards.
7.What is the process for return or replacement of IPI070N08N3 G?
All IPI070N08N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPI070N08N3 G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI070N08N3 G part is unused and in its original packaging.
Return procedure for IPI070N08N3 G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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