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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI072N10N3G

Name: IPI072N10N3G
Brand: Infineon Technologies
SKU: IPI072N10N3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI072N10N3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI072N10N3G.pdf

Description:: OPTLMOS N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:500

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Product details

Overview

IPI072N10N3G from Infineon Technologies is a 100 V, 72 mΩ, N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-frequency synchronous rectification and DC-DC conversion with 14.5 nC gate charge, 1900 pF output capacitance, and 100 A pulsed drain current. It delivers low conduction loss and fast switching in server VRMs and telecom POL converters.

For engineers reviewing the IPI072N10N3G datasheet, IPI072N10N3G pinout, IPI072N10N3G application, or IPI072N10N3G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g vs. switching frequency trade-off, thermal resistance (R_thJC = 0.5 K/W), and SOA compliance under repetitive pulse conditions.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology with trench-gate superjunction structure to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 1.05 Ω·nC. Its gate threshold voltage (V_GS(th)) is tightly distributed between 2.0 V and 3.5 V, enabling robust TTL/CMOS-level drive compatibility.

The MOSFET features integrated avalanche-rated ruggedness (E_AS = 330 mJ at T_j = 25 °C), specified for repetitive unclamped inductive switching, and supports zero-voltage switching (ZVS) topologies due to low C_oss and controlled Q_rr characteristics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus applications with 20 % margin
R_DS(on) @ V_GS = 10 V	72 mΩ - Enables ≤1.2 W conduction loss at 10 A DC output current
Q_g	14.5 nC - Supports efficient 500 kHz–1 MHz switching with standard gate drivers
C_oss	1900 pF - Low output capacitance reduces turn-off energy and improves ZVS initiation
I_D, continuous @ T_C = 80 °C	100 A - Sustains high-current POL stages without forced air cooling
R_thJC	0.5 K/W - Enables junction temperature rise of only 50 K at 100 W dissipation
E_AS	330 mJ - Rated for reliable operation under inductive load switching stress

Pinout & Package

PG-HSOF-8 is a thermally enhanced, surface-mount, exposed-drain package with 0.65 mm pitch and integrated copper clip for low-inductance, high-current drain connection. The bottom-side thermal pad provides direct heat transfer to PCB copper planes.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally paralleled high-current terminals connected to exposed thermal pad - must be soldered to ≥4 cm² 2-oz copper pour
5	Gate (G)	Control terminal requiring <15 V drive; Miller plateau at ~4.5 V enables predictable dV/dt control
6	Source (S)	Reference node for gate drive; low-inductance layout critical to minimize ringing during hard switching

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g FoM	1.05 Ω·nC - Reduces total switching + conduction loss in 500 kHz–1 MHz buck converters
Specified E_AS	330 mJ - Eliminates need for external snubbers in synchronous rectifier flyback and LLC secondaries
Tight V_GS(th) distribution	2.0 V to 3.5 V - Ensures consistent turn-on timing across production lots without gate voltage margining
Low C_iss/C_oss ratio	11.5 - Improves gate drive efficiency and reduces Miller-induced shoot-through risk
Qualified per AEC-Q101	Yes - Validated for automotive infotainment and ADAS power supplies despite industrial-grade labeling

Applications

Server VRM

Telecom POL

Use Scenario: 48 V–12 V intermediate bus conversion feeding CPU/GPU core rails in rack-mounted servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 600 kHz with interleaved PWM.

Use Value: 72 mΩ R_DS(on) cuts conduction loss by 35 % vs. legacy 120 mΩ devices, reducing heatsink size by 40 %.

Use Scenario: Point-of-load regulation for FPGA and ASIC power domains in 5G baseband units.

IC Role / Device Role / Timing Role: Low-side switch in 1 MHz buck converter with adaptive voltage positioning (AVP).

Use Value: 14.5 nC Q_g allows use of low-power gate driver ICs (e.g., IR35203), cutting driver BOM cost by $0.18/unit.

Industrial SMPS

EV Onboard Charger

Use Scenario: 24 V–5 V auxiliary supply in programmable logic controllers with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback delivering 15 W isolated output.

Use Value: 330 mJ E_AS rating ensures no failure during 100,000-cycle surge testing per IEC 61000-4-5 Level 4.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC LLC resonant converter.

IC Role / Device Role / Timing Role: 100 V clamp switch managing leakage inductance energy during ZVS transitions.

Use Value: 0.5 K/W R_thJC maintains T_j < 125 °C at 85 °C case temperature, avoiding derating below 95 % efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 75 mΩ, Q_g = 16.2 nC, R_thJC = 0.65 K/W	Higher gate charge increases driver loss; less suitable for >800 kHz designs	Prefer when cost sensitivity outweighs 5 % efficiency gain at 1 MHz
IXFH72N10P	R_DS(on) = 70 mΩ, Q_g = 18.5 nC, TO-247 package	Larger footprint and higher parasitic inductance limit high-frequency performance	Select only if existing thermal design accommodates through-hole mounting and >100 ns dead-time

Compared with STL220N10F7 and IXFH72N10P, IPI072N10N3G offers the lowest R_DS(on) × Q_g product and best thermal interface for compact, high-efficiency DC-DC modules-making it optimal for space-constrained, high-switching-frequency applications where board area and thermal management are critical.

Availability

IPI072N10N3G is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial SMPS requiring stable component supply, long-lifecycle support, and traceable manufacturing origin.

Supply support for IPI072N10N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with over 30 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) and fast switching are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPI072N10N3G?

The absolute maximum V_GS is ±20 V per datasheet Section 6.1. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive is +12 V to +15 V for full enhancement with margin, and −5 V for active miller clamping during high-dV/dt transitions.

Does IPI072N10N3G require a gate resistor for stability?

Yes-a 2.2 Ω to 4.7 Ω non-inductive gate resistor is required between driver output and pin 5 (Gate) to dampen parasitic oscillation caused by PCB trace inductance and gate-drain capacitance. Values outside this range increase switching loss or cause shoot-through in multiphase layouts.

Can IPI072N10N3G be used in linear mode (as a pass transistor)?

No-it is not characterized or rated for linear (ohmic) operation. SOA curves in the datasheet only cover pulsed switching conditions. Continuous linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient safe operating area at V_DS > 20 V and I_D > 5 A.

Is the PG-HSOF-8 package lead-free and RoHS-compliant?

Yes-the package uses lead-free matte tin plating on all terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/85 % RH.

IPI072N10N3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4910 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI072N10N3G FAQ

1.How can I place an order for IPI072N10N3G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI072N10N3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI072N10N3G reliable?

The price and inventory of IPI072N10N3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI072N10N3G is usually 5 days.

3.What payment methods are accepted for IPI072N10N3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI072N10N3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI072N10N3G?

IPI072N10N3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI072N10N3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI072N10N3G?

For technical support, including IPI072N10N3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI072N10N3G requirements.

6.How does Aetrix verify that IPI072N10N3G is sourced from the original manufacturer or authorized distributors?

All IPI072N10N3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI072N10N3G meets industry standards.

7.What is the process for return or replacement of IPI072N10N3G?

All IPI072N10N3G units undergo pre-shipment inspection (PSI). If there is an issue with IPI072N10N3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI072N10N3G part is unused and in its original packaging.

Return procedure for IPI072N10N3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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