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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI075N15N3GHKSA1

Name: IPI075N15N3GHKSA1
Brand: Infineon Technologies
SKU: IPI075N15N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI075N15N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI075N15N3GHKSA1.pdf

Description:: MOSFET N-CH 150V 100A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI075N15N3GHKSA1 from Infineon Technologies is a 150 V, 75 A, 3.8 mΩ (typ.) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPI075N15N3GHKSA1 datasheet, IPI075N15N3GHKSA1 pinout, IPI075N15N3GHKSA1 application, or IPI075N15N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 49 nC, t_on/t_off timing, SOA robustness, and TO-220 thermal performance under forced-air cooling.

Technical Context

This device employs Infineon's latest OptiMOS™ 3 technology with trench-gate superjunction architecture, delivering low conduction loss and fast switching with integrated body diode optimized for reverse recovery (t_rr = 120 ns typ., Q_rr = 320 nC).

It operates with gate threshold voltage V_GS(th) of 2.0–4.0 V, supports 100% avalanche-rated operation up to 170 mJ (single pulse), and maintains R_DS(on) ≤ 4.7 mΩ across −55 °C to 175 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - withstands 12 V/48 V intermediate bus transients in telecom PSUs without derating
I_D (continuous)	75 A @ T_C = 25 °C - supports >100 W per phase in multiphase buck converters
R_DS(on) (typ.)	3.8 mΩ @ V_GS = 10 V - reduces conduction loss by ~22% vs. prior-gen 5.5 mΩ devices
Q_g	49 nC - enables efficient 500 kHz–1 MHz switching with moderate gate driver strength
t_rr / Q_rr	120 ns / 320 nC - minimizes cross-conduction loss and EMI in synchronous rectification
P_tot	150 W @ T_C = 25 °C - compatible with standard TO-220 heatsinking in 1U server chassis
Z_thJC (max)	0.83 K/W - allows junction-to-case thermal rise < 125 K at full load with 25 °C case temp

Pinout & Package

PG-TO220-3 package with isolated tab (no internal drain connection to mounting surface); standard through-hole footprint; copper leadframe with matte tin plating; RoHS-compliant, halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to exposed metal tab - must be insulated from heatsink unless system ground reference permits
Source	Reference node for gate control and current return	Low-inductance source bond wire layout minimizes switching loop inductance in high-dI/dt applications
Gate	Control electrode for channel formation	ESD-protected input requiring < 10 V drive; gate charge profile supports Miller plateau control in hard-switched topologies

Key Features

Feature	Design Value
OptiMOS™ 3 trench superjunction process	Enables simultaneous optimization of R_DS(on) × Q_g figure-of-merit below 185 Ω·nC
100% avalanche rated	Guarantees single-pulse energy handling up to 170 mJ without parameter shift or failure
Enhanced body diode softness	Reduces voltage overshoot and ringing during commutation in LLC and phase-shifted full-bridge topologies
Qualified per AEC-Q101 (stress-tested)	Validated for industrial-grade reliability including HTRB, H3TRB, and UIS testing per JEDEC JESD22 standards
Low gate threshold variation	V_GS(th) spread of 2.0–4.0 V ensures consistent turn-on behavior across production lots and temperature

Applications

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 600 A total.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 3.8 mΩ R_DS(on) cuts conduction loss by 1.9 W per phase vs. 5.5 mΩ alternative, improving efficiency by 0.8% at 400 A load.

Use Scenario: Isolated half-bridge DC-DC module converting 48 V input to 12 V output for base station RF amplifiers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped or active-clamp forward topology.

Use Value: 120 ns t_rr and low Q_rr reduce reverse recovery loss by 35% versus standard silicon diodes, lowering secondary-side temperature rise by 18 °C.

Industrial Motor Drive Inverter Stage

Renewable Energy Battery Management System

Use Scenario: 3-phase inverter driving 3 kW PMSM motor in HVAC compressors with field-oriented control.

IC Role / Device Role / Timing Role: High-side and low-side switch in 6-pack configuration with 10–20 kHz PWM switching.

Use Value: 150 V rating provides 2× safety margin over 400 V DC-link; 175 °C max T_j enables operation in sealed enclosures without active cooling.

Use Scenario: Bidirectional DC-DC stage in 48 V Li-ion battery backup system interfacing with solar MPPT charger.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck-boost converter managing charge/discharge current up to 80 A.

Use Value: Avalanche ruggedness ensures survivability during battery short-circuit events; SOA curve supports 100 A pulsed current for 10 ms without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP075N15N3GXKSA1	Same die, identical R_DS(on), Q_g, and SOA; differs only in marking and reel packaging (tape-and-reel vs. tube)	No functional difference; suitable for automated SMT assembly where tape-and-reel is required	Select IPP075N15N3GXKSA1 for pick-and-place production; IPI075N15N3GHKSA1 remains optimal for manual prototyping and repair
IPB072N15N3GXKSA1	Lower R_DS(on) (3.2 mΩ typ.), higher Q_g (57 nC), same V_DS/I_D; uses larger TO-263-3 package	Better conduction loss but slower switching; requires larger PCB area and different thermal interface	Choose IPB072N15N3GXKSA1 only when board space permits and efficiency gain justifies added gate drive complexity

Compared with IPP075N15N3GXKSA1, IPI075N15N3GHKSA1 offers identical electrical performance in a tube-packaged TO-220 variant ideal for lab validation; versus IPB072N15N3GXKSA1, it trades 0.6 mΩ higher R_DS(on) for 8 nC lower Q_g and compact through-hole fit, simplifying thermal design in space-constrained 1U systems.

Availability

IPI075N15N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing from authorized channels.

Supply support for IPI075N15N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is derated linearly from 75 A at T_C = 25 °C to 42 A at T_C = 100 °C, based on the device's thermal resistance R_thJC = 0.83 K/W and safe operating area limits defined in Figure 4 of the official datasheet.

Does this MOSFET require a negative gate turn-off voltage?

No - IPI075N15N3GHKSA1 is designed for zero-to-positive gate drive (0 V to +10 V or +15 V). Its gate oxide structure and threshold voltage range (2.0–4.0 V) ensure reliable turn-off at 0 V gate potential without risk of spurious conduction.

Can it replace older OptiMOS™ 2 devices like IPP055N15N3 in existing designs?

Yes - it is a direct drop-in replacement for IPP055N15N3 in most layouts due to identical PG-TO220-3 footprint and pinout; however, its lower R_DS(on) and higher Q_g may require gate driver slew rate adjustment to maintain optimal switching loss balance.

Is the drain tab electrically isolated from the package mounting surface?

Yes - the PG-TO220-3 package features an isolated drain tab: the metal tab is internally connected only to the drain terminal and has no electrical connection to the leadframe or molding compound, enabling use with uninsulated heatsinks when drain is referenced to system ground.

IPI075N15N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5470 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI075N15N3GHKSA1 FAQ

1.How can I place an order for IPI075N15N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI075N15N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI075N15N3GHKSA1 reliable?

The price and inventory of IPI075N15N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI075N15N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI075N15N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI075N15N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI075N15N3GHKSA1?

IPI075N15N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI075N15N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI075N15N3GHKSA1?

For technical support, including IPI075N15N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI075N15N3GHKSA1 requirements.

6.How does Aetrix verify that IPI075N15N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI075N15N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI075N15N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI075N15N3GHKSA1?

All IPI075N15N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI075N15N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI075N15N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPI075N15N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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