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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI084N06L3GXKSA1

Name: IPI084N06L3GXKSA1
Brand: Infineon Technologies
SKU: IPI084N06L3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI084N06L3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI084N06L3GXKSA1.pdf

Description:: MOSFET N-CH 60V 50A TO262-3

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Inventory:6,054

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Product details

Overview

IPI084N06L3GXKSA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO262-3 package, rated for 60 V V_DS, 8.1 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 100% avalanche tested ruggedness and optimized FOM for high-frequency DC/DC converters.

For engineers reviewing the IPI084N06L3GXKSA1 datasheet, IPI084N06L3GXKSA1 pinout, IPI084N06L3GXKSA1 application, or IPI084N06L3GXKSA1 equivalent, key selection criteria include gate charge (Q_g = 22–29 nC), low R_DS(on) at 4.5 V (9.4–14 mΩ), thermal resistance (R_thJC = 1.9 K/W), and synchronous rectification capability in compact industrial power supplies.

Technical Context

This OptiMOS™3 device employs trench-gate superjunction technology to achieve low gate charge × R_DS(on) product (FOM), enabling efficient switching up to several hundred kHz in isolated and non-isolated DC/DC topologies. Its logic-level gate drive (V_GS(th) = 1.2–2.2 V) supports direct interfacing with 3.3 V and 5 V controllers.

The integrated body diode features fast reverse recovery (t_rr = 40 ns, Q_rr = 39 nC) and low forward voltage (V_SD = 1.0–1.2 V at I_F = 50 A), making it suitable for synchronous rectification where diode conduction loss and switching loss must be minimized simultaneously.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input bus applications with margin
R_DS(on) max	8.1 mΩ @ V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at full load in 50 A power stages
Q_g	22–29 nC - Low total gate charge reduces driver power and enables high-frequency PWM operation
t_r/t_f	26 ns / 7 ns - Fast switching transitions minimize overlap loss in hard-switched converters
E_AS	43 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients
R_thJC	1.9 K/W - Junction-to-case thermal resistance supports high-power density mounting on heatsinks
V_GS(th)	1.2–2.2 V - Logic-level threshold allows reliable turn-on with standard microcontroller GPIOs

Pinout & Package

Package: PG-TO262-3 (straight lead variant of TO-262, surface-mount compatible with through-hole footprint). Case material: thermally enhanced epoxy; drain-connected tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring low-current drive; sensitive to ESD
Pin 3 (Drain)	Power output / high-side connection	Internally connected to metal tab; electrically and thermally ties to heatsink

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables >95% efficiency in 300–500 kHz 48 V→12 V DC/DC converters with minimal gate drive loss
100% avalanche tested	Guarantees single-pulse ruggedness up to 43 mJ without derating, eliminating need for external snubbers in flyback designs
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with standard PWM controllers and MCU outputs without level-shifting
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 standards for lead-free assembly and environmental compliance

Applications

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards with 48 V intermediate bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 400–600 kHz.

Use Value: 8.1 mΩ R_DS(on) and 29 nC Q_g reduce conduction + switching losses by 18% vs. prior-gen MOSFETs at 50 A load.

Use Scenario: Primary-side switch and secondary-side synchronous rectifier in isolated 24 V→5 V/3.3 V telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side MOSFET in active clamp forward or LLC resonant converter, driven by transformer-coupled gate signal.

Use Value: Fast t_f = 7 ns and low Q_rr = 39 nC suppress shoot-through risk and diode reverse recovery loss during zero-voltage switching transitions.

Automotive Body Control Module

Renewable Energy Inverter Auxiliary Supply

Use Scenario: Load switching and motor drive in 12 V/24 V automotive BCMs with strict EMC and thermal constraints.

IC Role / Device Role / Timing Role: High-side load switch controlling solenoids, fans, or LED arrays with PWM dimming.

Use Value: V_GS(th) = 1.7 V typ ensures stable turn-on across -40 °C to 150 °C ambient, avoiding cold-start failure.

Use Scenario: Auxiliary 24 V→5 V supply in solar string inverters, operating continuously under high ambient temperature.

IC Role / Device Role / Timing Role: Primary switch in flyback controller powering gate drivers and sensing circuitry.

Use Value: R_thJC = 1.9 K/W and T_j(max) = 175 °C allow sustained 50 A operation with passive heatsinking in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP084N06L3G	Same die, PG-TO220-3 package; R_thJC = 1.9 K/W identical, but higher R_thJA due to leadframe geometry	Preferred for prototyping and lower-volume through-hole assembly; less suitable for automated SMT lines	Select when manual soldering or heatsink clamping is used; avoid if board space or thermal via count is constrained
IPB081N06L3G	Lower R_DS(on) (7.0–8.4 mΩ), same V_DS/Q_g; uses PG-TO263-3 package with exposed drain pad	Better suited for ultra-high-density layouts requiring minimal PCB area and maximum thermal transfer to copper planes	Choose for space-constrained 6-layer boards with internal thermal planes; requires reflow profile optimization for large pad

Compared with IPP084N06L3G and IPB081N06L3G, IPI084N06L3GXKSA1 offers identical electrical performance in a PG-TO262-3 package that balances SMT compatibility, mechanical robustness, and thermal interface simplicity-ideal for high-reliability industrial power modules where lead coplanarity and wave-solder tolerance matter.

Availability

IPI084N06L3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for IPI084N06L3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and low gate charge are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is rated at 50 A up to T_C = 100 °C, limited by bondwire capacity-not junction temperature. At T_C = 100 °C, the chip itself can sustain 73 A, but the package limits safe operation to 50 A per JEDEC qualification.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 1.6 Ω, as specified in dynamic test conditions) is required to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's low gate resistance (R_G = 0.9 Ω typ) makes it especially sensitive to PCB layout parasitics above 300 kHz.

Can IPI084N06L3GXKSA1 be used in linear mode (constant-current regulation)?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) graph shows only single-pulse capability; sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin below 10 V V_DS.

Is the drain tab electrically isolated from the package leads?

No-the drain is internally connected to the metal tab and Pin 3. The tab must be electrically tied to the drain net and thermally attached to a heatsink; no insulating pad is needed unless system isolation requirements dictate reinforced insulation between heatsink and circuit ground.

IPI084N06L3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI084N06L3GXKSA1 FAQ

1.How can I place an order for IPI084N06L3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI084N06L3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI084N06L3GXKSA1 reliable?

The price and inventory of IPI084N06L3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI084N06L3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI084N06L3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI084N06L3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI084N06L3GXKSA1?

IPI084N06L3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI084N06L3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI084N06L3GXKSA1?

For technical support, including IPI084N06L3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI084N06L3GXKSA1 requirements.

6.How does Aetrix verify that IPI084N06L3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI084N06L3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI084N06L3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI084N06L3GXKSA1?

All IPI084N06L3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI084N06L3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI084N06L3GXKSA1 part is unused and in its original packaging.

Return procedure for IPI084N06L3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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