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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI09N03LA

Name: IPI09N03LA
Brand: Infineon Technologies
SKU: IPI09N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI09N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI09N03LA.pdf

Description:: MOSFET N-CH 25V 50A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI09N03LA from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO262-3-1 package, rated for 25 V V_DS, 9.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, with 175 °C maximum junction temperature and dv/dt ruggedness up to 6 kV/µs - optimized for high-frequency DC/DC converters in server power supplies and industrial motor drives.

For engineers reviewing the IPI09N03LA datasheet, IPI09N03LA pinout, IPI09N03LA application, or IPI09N03LA equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), robust avalanche energy rating (75 mJ), thermal resistance (R_thJC = 2.4 K/W), and logic-level gate drive compatibility (V_GS(th) typ. 1.6 V).

Technical Context

This device implements a trench-based OptiMOS®2 silicon process enabling low conduction loss and fast switching. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic controllers, while the 12.4–15.5 mΩ R_DS(on) at 4.5 V supports efficient synchronous rectification in buck converters.

The MOSFET features fully characterized dynamic parameters: C_iss = 1235–1642 pF, Q_g = 10–13 nC, Q_gd = 2.8–4.3 nC, and t_r/t_f = 73–109 ns / 3.2–4.8 ns - enabling stable operation at >500 kHz switching frequencies with minimal gate drive loss and reduced EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12 V input bus systems with margin.
R_DS(on) max	9.2 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1.5 W conduction loss at 40 A continuous current.
I_D continuous	50 A at T_C = 25 °C - Supported by low R_thJC (2.4 K/W) and TO262 thermal design.
E_AS	75 mJ single-pulse avalanche energy - Ensures robustness against inductive switching transients without external snubbers.
dv/dt rating	6 kV/µs - Confirmed ruggedness under fast voltage transitions, critical for hard-switched topologies.
Q_g	10–13 nC - Low total gate charge enables efficient drive with standard gate drivers (e.g., IR2110, UCC27531).
V_GS(th)	1.2–2.0 V - Logic-level threshold compatible with 3.3 V microcontrollers and PWM ICs without level-shifting.
T_j max	175 °C - Extended thermal operating range supports high-power density designs in constrained enclosures.

Pinout & Package

Package: PG-TO262-3-1 - Insulated through-hole package with isolated tab, 3-pin configuration (Drain, Gate, Source), footprint-compatible with TO-220 but with improved thermal performance and creepage/clearance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Internally connected to metal tab; electrically active and thermally conductive - must be isolated from heatsink unless referenced to system ground.
Pin 2	Gate	Control terminal; low-input capacitance (C_iss ≈ 1.4 nF) enables fast switching with minimal driver power.
Pin 3	Source	Power return path; tied to source of internal MOSFET die - forms reference for gate drive and current sensing.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V - Eliminates need for gate driver boost stages in 3.3 V/5 V control systems.
Low FOM (Q_g × R_DS(on))	~93 nC·mΩ - Reduces combined conduction + switching losses in high-frequency SMPS.
dv/dt ruggedness	6 kV/µs - Prevents false turn-on during fast transient events in half-bridge configurations.
175 °C operation	Rated junction temperature - Supports derated operation in sealed industrial enclosures without forced air.
Avalanche-rated	75 mJ single-pulse E_AS - Allows safe operation under unclamped inductive load conditions without external protection.

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-current, high-efficiency 12 V input buck converter supplying CPU core voltage (0.8–1.5 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck topology, switching at 500–1000 kHz.

Use Value: Low R_DS(on) and Q_g minimize power loss and thermal stress across multiple phases, improving VRM efficiency by ≥0.8% at full load.

Use Scenario: Half-bridge output stage in 24 V BLDC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling 30–50 A continuous current with PWM commutation at 20–40 kHz.

Use Value: 175 °C rating and low R_thJC allow direct mounting on aluminum chassis without additional heatsinking, reducing BOM cost and footprint.

Telecom PSU

Automotive DC/DC Converter

Use Scenario: Isolated forward or LLC secondary-side synchronous rectifier in 48 V telecom power supply (3.3/5/12 V outputs).

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by self-driven or controller-synchronized gate signal.

Use Value: 9.2 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky, increasing full-load efficiency from 92% to 94.5%.

Use Scenario: 12 V to 5 V/3.3 V point-of-load converter in automotive infotainment head unit with extended temperature requirements.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck regulator, operating across -40 °C to +125 °C ambient.

Use Value: Guaranteed V_GS(th) stability and R_DS(on) derating per datasheet curves ensure reliable startup and regulation under cold-crank (6.5 V battery) conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP09N03LA	Identical silicon die, PG-TO220-3-1 package; R_thJC = 2.4 K/W same, but lower creepage and no insulated tab.	Preferred where mechanical mounting constraints favor TO-220 footprint and isolation is not required.	Select IPP09N03LA when PCB layout space permits TO-220 and heatsink grounding is acceptable.
IRL3803PBF	24 V V_DS, 8.0 mΩ R_DS(on) at 10 V, higher Q_g (27 nC); same logic-level threshold and TO-220 package.	Better conduction loss but slower switching due to higher gate charge - less optimal above 300 kHz.	Choose IRL3803PBF only if lowest possible R_DS(on) dominates over switching frequency and driver capability.

Compared with IPP09N03LA, IPI09N03LA offers superior isolation and creepage for safety-critical AC/DC or industrial systems; versus IRL3803PBF, it delivers lower switching loss and better high-frequency efficiency despite marginally higher R_DS(on).

Availability

IPI09N03LA is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and automotive DC/DC converters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPI09N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q100 and JEDEC.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion applications - engineered for low R_DS(on), fast switching, and rugged operation in demanding DC/DC, motor control, and synchronous rectification systems.

FAQ

Is IPI09N03LA suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes - its 25 V V_DS, 9.2 mΩ R_DS(on), and low Q_g (10–13 nC) make it well-suited for secondary-side synchronous rectification in 48 V input LLC converters. The 175 °C rating and dv/dt ruggedness (6 kV/µs) ensure reliability under fast transient conditions typical of resonant topologies.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 46 A at T_C = 100 °C. This value accounts for thermal derating based on R_thJC = 2.4 K/W and maximum junction temperature of 175 °C - verified under steady-state conduction with proper heatsinking.

Does IPI09N03LA have integrated ESD protection on the gate?

No - the device does not include on-die ESD protection circuitry. External gate protection (e.g., 12 V Zener clamp between gate and source) is recommended in systems exposed to handling or board-level transients, per Infineon's application note AN2002-05.

Can IPI09N03LA replace IPP09N03LA in an existing TO-220 footprint design?

No - IPI09N03LA uses PG-TO262-3-1 (insulated TO-262), which has different pin spacing, tab isolation, and mounting hole pattern than TO-220. Direct replacement requires PCB redesign and mechanical revalidation; however, electrical characteristics are identical.

IPI09N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI09N03LA FAQ

1.How can I place an order for IPI09N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI09N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI09N03LA reliable?

The price and inventory of IPI09N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI09N03LA is usually 5 days.

3.What payment methods are accepted for IPI09N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI09N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI09N03LA?

IPI09N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI09N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI09N03LA?

For technical support, including IPI09N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI09N03LA requirements.

6.How does Aetrix verify that IPI09N03LA is sourced from the original manufacturer or authorized distributors?

All IPI09N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI09N03LA meets industry standards.

7.What is the process for return or replacement of IPI09N03LA?

All IPI09N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPI09N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI09N03LA part is unused and in its original packaging.

Return procedure for IPI09N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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