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Infineon Technologies IPI100N04S3-03

Part No.:
IPI100N04S3-03
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIPI100N04S3-03.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:722

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Product details

Overview

IPI100N04S3-03 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, rated for 40 V VDS, 100 A continuous drain current at TC = 100 °C, and ultra-low 2.5 mΩ RDS(on) (max) at VGS = 10 V. It delivers high-current switching in automotive powertrain control modules, battery disconnect units, and 12 V/48 V hybrid starter-generator inverters.

For engineers reviewing the IPI100N04S3-03 datasheet, IPI100N04S3-03 pinout, IPI100N04S3-03 application, or IPI100N04S3-03 equivalent, key selection criteria include its 175 °C maximum junction temperature, 100% avalanche-tested ruggedness, 0.7 K/W RthJC, and SMD-compatible thermal performance on PCBs with 6 cm² copper area.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching dynamics: typical Ciss = 8500 pF, Coss = 2300 pF, and Crss = 385 pF at VDS = 25 V. Its gate threshold voltage (2.1–4.0 V) ensures robust noise immunity in noisy automotive environments.

The MOSFET integrates a co-packaged body diode with 100 A continuous forward current rating, 0.85–1.3 V VSD at 80 A, and 60 ns trr, enabling efficient synchronous rectification and bidirectional energy recovery in DC-DC converters and motor drives.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Supports 12 V and 48 V automotive systems with margin against load-dump transients
RDS(on) max2.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 80 A, reducing heatsink requirements
ID cont.100 A @ TC = 100 °C - Sustains high-current operation in engine bay-mounted power stages
EAS898 mJ - Withstands single-pulse inductive energy without failure in motor drive freewheeling
RthJC0.7 K/W - Allows direct thermal coupling to heatsink for high-power density packaging
tr/tf16 ns / 17 ns - Minimizes switching losses in 20–100 kHz PWM applications
VGS(th)2.1–4.0 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

Package: PG-TO262-3-1 (TO-262 variant with isolated tab), thermally enhanced plastic case, RoHS-compliant, MSL1 rated for 260 °C peak reflow.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; electrically connected to exposed metal tab for thermal path
Pin 2 (Gate)Control inputHigh-impedance MOS gate requiring <50 nC total charge for full turn-on
Pin 3 (Drain)Power outputInternally connected to die backside; must be soldered to large copper pour for thermal management

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
100% unclamped inductive switching (UIS) testedGuarantees ruggedness under worst-case short-circuit and inductive flyback conditions
Ultra-low RDS(on) × Qg figure of merit~275 Ω·nC - Balances conduction and switching loss for high-efficiency 48 V BLDC drives
175 °C maximum operating temperatureEnables placement in high-ambient zones (e.g., near engines or inverters) without derating
Green RoHS-compliant packageHalogen-free, lead-free construction meeting global automotive environmental standards

Applications

Automotive Starter-Generator Inverter12 V Battery Disconnect Switch

Use Scenario: High-current bidirectional power flow between 12 V battery and integrated starter-generator during start-stop and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg; handles 100 A continuous, 400 A pulsed currents.

Use Value: 2.5 mΩ RDS(on) reduces conduction loss by >30% vs. legacy 3.8 mΩ devices, improving system efficiency by 1.2% at full load.

Use Scenario: Solid-state replacement for mechanical relays in battery management systems to enable fast, contactless isolation during fault events.

IC Role / Device Role / Timing Role: Single-pole high-current switch controlling main battery feed to vehicle ECU and infotainment subsystems.

Use Value: 898 mJ avalanche energy rating allows safe clamping of inductive kickback from solenoid loads without external snubbers.

48 V Mild Hybrid DC-DC ConverterElectric Power Steering (EPS) Motor Driver

Use Scenario: Primary synchronous rectifier in 3 kW bi-directional buck-boost converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Secondary-side MOSFET operating at 100 kHz with zero-voltage switching; conducts 80 A RMS.

Use Value: 0.85 V typical VSD and 60 ns trr minimize reverse recovery loss and improve light-load efficiency by 2.1%.

Use Scenario: Half-bridge low-side switch in three-phase EPS motor driver delivering up to 15 kW peak torque assist.

IC Role / Device Role / Timing Role: Fast-switching power stage component with tight gate drive timing control for precise torque modulation.

Use Value: 16 ns rise time and 17 ns fall time support <500 ns dead-time control, reducing shoot-through risk and improving torque linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100N04S3-03PG-TO263-3-2 package; identical silicon die and electrical specs; 0.7 K/W RthJC sameSuitable for surface-mount assembly; requires larger PCB footprint than TO262Select when automated SMT production and board-level thermal spreading are prioritized
IPP100N04S3-03PG-TO220-3-1 package; same die; RthJC = 0.7 K/W but higher RthJA due to smaller caseBetter suited for prototyping and low-volume through-hole builds; limited airflow-dependent coolingChoose for manual assembly, evaluation boards, or space-constrained non-automotive designs

Compared with IPB100N04S3-03 and IPP100N04S3-03, the IPI100N04S3-03 offers identical electrical performance in a thermally optimized through-hole package that balances manufacturability, thermal reliability, and serviceability-making it ideal for high-volume automotive power modules where mechanical robustness and field-replaceability matter.

Availability

IPI100N04S3-03 is available at Aetrix Electronics and suitable for automotive powertrain control, battery disconnect systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPI100N04S3-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The OptiMOS®-T product line targets high-efficiency, high-reliability automotive power conversion-designed specifically for 12 V/48 V hybrid architectures, electric power steering, and intelligent battery switching applications.

FAQ

What is the maximum allowable gate-source voltage for IPI100N04S3-03?

The absolute maximum VGS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive circuits should limit voltage to ≤15 V during transient conditions and maintain steady-state VGS between 10 V (full enhancement) and 5.2 V (gate plateau), as confirmed by gate charge curves in the datasheet.

Does IPI100N04S3-03 require a gate resistor, and if so, what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. Based on measured Qg = 110–145 nC and target td(on) ≈ 30 ns, a 3.3 Ω resistor is recommended when driven by a 1 A peak gate driver at 10 V, matching the test condition used in the datasheet's dynamic characterization.

Can IPI100N04S3-03 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (increasing ~0.5%/°C from 25 °C to 175 °C) enables inherent current sharing. Successful paralleling requires matched layout symmetry, identical gate drive paths, and shared source inductance minimization; application note ANPS071E provides layout guidelines for multi-device arrays.

Is the body diode in IPI100N04S3-03 suitable for continuous freewheeling in a synchronous buck converter?

Yes-the co-packaged diode supports 100 A continuous forward current at TC = 100 °C and exhibits 0.85–1.3 V VSD at 80 A. Its 60 ns trr and 95 nC Qrr allow efficient operation up to 100 kHz, though external Schottky diodes may be preferred for >200 kHz designs to reduce recovery loss.

IPI100N04S3-03 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IPI100N04S3-03 FAQ

1.How can I place an order for IPI100N04S3-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI100N04S3-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI100N04S3-03 reliable?

The price and inventory of IPI100N04S3-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100N04S3-03 is usually 5 days.

3.What payment methods are accepted for IPI100N04S3-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI100N04S3-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI100N04S3-03?

IPI100N04S3-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI100N04S3-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI100N04S3-03?

For technical support, including IPI100N04S3-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100N04S3-03 requirements.

6.How does Aetrix verify that IPI100N04S3-03 is sourced from the original manufacturer or authorized distributors?

All IPI100N04S3-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100N04S3-03 meets industry standards.

7.What is the process for return or replacement of IPI100N04S3-03?

All IPI100N04S3-03 units undergo pre-shipment inspection (PSI). If there is an issue with IPI100N04S3-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI100N04S3-03 part is unused and in its original packaging.

Return procedure for IPI100N04S3-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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