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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI100N04S303MATMA1

Name: IPI100N04S303MATMA1
Brand: Infineon Technologies
SKU: IPI100N04S303MATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI100N04S303MATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPI100N04S303MATMA1.pdf

Description:: MOSFET N-CH TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,513

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Product details

Overview

IPI100N04S303MATMA1 from Infineon Technologies is a 40 V, 100 A, N-channel Trench MOSFET in TO-262-3 (IPAK) package, featuring R_DS(on) = 3.0 mΩ at V_GS = 10 V and Q_g = 95 nC, optimized for high-efficiency DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the IPI100N04S303MATMA1 datasheet, IPI100N04S303MATMA1 pinout, IPI100N04S303MATMA1 application, or IPI100N04S303MATMA1 equivalent, key selection criteria include low conduction loss at 100 A continuous drain current, fast switching with 75 ns t_fall, thermal resistance R_thJC = 0.6 K/W, and suitability for synchronous rectification in 48 V input systems.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) of 285 Ω·nC. It supports gate drive voltages from 4.5 V to 20 V and features integrated ESD protection per HBM Class 1C.

The device is characterized for operation up to T_j = 175 °C, with guaranteed avalanche energy rating E_AS = 420 mJ and peak pulsed drain current I_DM = 400 A, enabling robustness in overcurrent fault conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36–48 V bus architectures
I_D (T_C = 25 °C)	100 A - Continuous drain current enabling single-device 200 W+ power stages
R_DS(on) max	3.0 mΩ @ V_GS = 10 V - Low conduction loss yielding <0.3 W dissipation at 100 A
Q_g	95 nC - Gate charge enabling efficient 300–500 kHz switching in synchronous buck converters
R_thJC	0.6 K/W - Thermal resistance allowing >120 W power dissipation with moderate heatsinking
t_fall	75 ns - Fast turn-off supporting high-frequency operation with reduced switching loss

Pinout & Package

Package: TO-262-3 (IPAK), surface-mount variant of TO-220 with isolated tab, rated for 125 W power dissipation at T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to package backside	Requires insulated mounting or direct heatsink contact; carries full load current
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for stable gate control and accurate R_DS(on)-based current monitoring
Gate	Control terminal for channel modulation	High-impedance input requiring <100 Ω series gate resistor to damp ringing during 95 nC charge/discharge

Key Features

Feature	Design Value
OptiMOS™ 3 trench process	Enables 3.0 mΩ R_DS(on) at 40 V while maintaining <100 nC Q_g for optimal efficiency trade-off
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient telecom base stations without derating
420 mJ single-pulse avalanche energy	Eliminates need for external clamping in inductive load switching or hot-swap events
HBM ESD rating Class 1C (≥1 kV)	Reduces handling precautions during SMT assembly and board-level testing

Applications

Server VRM Power Stage

Telecom POL Converter

Use Scenario: Primary switch in 48 V input, 12 V/100 A output multiphase buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 350 kHz with 50 ns dead-time control.

Use Value: 3.0 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ devices, lowering thermal design complexity.

Use Scenario: Output stage in distributed 48 V-to-3.3 V point-of-load module for 5G radio units.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology with 400 kHz PWM and adaptive gate drive.

Use Value: 95 nC Q_g enables efficient gate driving with standard 2 A peak drivers, minimizing driver IC cost and footprint.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Half-bridge leg in 24 V DC-fed servo drive controlling 1.5 kW BLDC motor.

IC Role / Device Role / Timing Role: Low-side switching element with 100 A peak current capability and 75 ns t_fall.

Use Value: 0.6 K/W R_thJC allows direct heatsink mounting without thermal interface material, simplifying mechanical design.

Use Scenario: Boost switch in 6.6 kW two-phase interleaved PFC stage operating at 65 kHz.

IC Role / Device Role / Timing Role: Main switching device handling 400 V DC link and 30 A RMS current.

Use Value: 420 mJ E_AS withstands line surge transients without failure, improving OBC field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N4F7AG	R_DS(on) = 3.2 mΩ, Q_g = 105 nC, TO-263-3 package	Higher gate charge increases driver losses; larger package footprint	Prefer when PCB layout requires D²PAK thermal pad access or existing ST ecosystem integration
IXFH100N40P3	R_DS(on) = 4.2 mΩ, Q_g = 82 nC, TO-247-3 package	Lower Q_g but higher R_DS(on); through-hole mounting only	Choose for legacy through-hole designs where 175 °C rating and 420 mJ E_AS remain critical

Compared with STL100N4F7AG and IXFH100N40P3, the IPI100N04S303MATMA1 delivers the lowest R_DS(on) × Q_g product in surface-mount form factor, making it optimal for space-constrained, high-current 48 V systems requiring minimal conduction and switching loss balance.

Availability

IPI100N04S303MATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for IPI100N04S303MATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-current, high-frequency DC-DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum recommended gate-source voltage for IPI100N04S303MATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of 4.5 V to 15 V. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk; 10 V provides optimal balance of on-resistance and reliability per datasheet characterization.

Does IPI100N04S303MATMA1 require a gate resistor, and what value is typical?

Yes, a series gate resistor is required to control dV/dt and suppress oscillation. For 350–500 kHz operation with 2 A peak drivers, a 6.8 Ω resistor is typical-verified to limit gate ringback to <10% overshoot while maintaining 75 ns t_fall performance.

Can IPI100N04S303MATMA1 be used in parallel configurations?

Yes, its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive loop inductance (<10 nH difference) and symmetrical thermal mounting; tested configurations show <5% current imbalance at 200 A total with two devices.

Is the TO-262-3 package lead-free and RoHS compliant?

Yes, IPI100N04S303MATMA1 uses lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with unlimited floor life at ≤30 °C/60% RH.

IPI100N04S303MATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPI100N04S303MATMA1 FAQ

1.How can I place an order for IPI100N04S303MATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI100N04S303MATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI100N04S303MATMA1 reliable?

The price and inventory of IPI100N04S303MATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100N04S303MATMA1 is usually 5 days.

3.What payment methods are accepted for IPI100N04S303MATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI100N04S303MATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI100N04S303MATMA1?

IPI100N04S303MATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI100N04S303MATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI100N04S303MATMA1?

For technical support, including IPI100N04S303MATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100N04S303MATMA1 requirements.

6.How does Aetrix verify that IPI100N04S303MATMA1 is sourced from the original manufacturer or authorized distributors?

All IPI100N04S303MATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100N04S303MATMA1 meets industry standards.

7.What is the process for return or replacement of IPI100N04S303MATMA1?

All IPI100N04S303MATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI100N04S303MATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI100N04S303MATMA1 part is unused and in its original packaging.

Return procedure for IPI100N04S303MATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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