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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI100N04S303MATMA2

Name: IPI100N04S303MATMA2
Brand: Infineon Technologies
SKU: IPI100N04S303MATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI100N04S303MATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPI100N04S303MATMA2.pdf

Description:: MOSFET N-CH TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,116

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Product details

Overview

IPI100N04S303MATMA2 from Infineon Technologies is a 40 V, 100 A, N-channel Trench MOSFET in TO-262-3 (IPAK) package, featuring R_DS(on) = 3.0 mΩ at V_GS = 10 V and Q_g = 85 nC, optimized for high-efficiency DC-DC power stages in server VRMs and telecom rectifiers.

For engineers reviewing the IPI100N04S303MATMA2 datasheet, IPI100N04S303MATMA2 pinout, IPI100N04S303MATMA2 application, or IPI100N04S303MATMA2 equivalent, key selection criteria include low conduction loss at 100 A continuous drain current, fast switching enabled by low gate charge, thermal performance in TO-262-3, and suitability for synchronous buck topologies with 40 V input rails.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) of 255 mΩ·nC. It supports 100% avalanche-rated operation up to E_AS = 510 mJ at T_j = 25 °C, enabling robustness in hard-switching converters.

The device integrates an integrated ESD protection diode (HBM Class 1C), operates with threshold voltage V_GS(th) = 2.0–4.0 V, and maintains safe operating area (SOA) compliance up to 100 A at V_DS = 10 V for pulse durations ≤ 10 ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V intermediate bus applications
I_D (continuous)	100 A - Sustained current capability at T_c = 25 °C, suitable for high-current CPU/GPU power delivery
R_DS(on) max	3.0 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements
Q_g	85 nC - Low gate charge minimizes drive power and enables >1 MHz switching in VRM designs
E_AS	510 mJ @ T_j = 25 °C - Confirmed single-pulse avalanche energy rating for transient overvoltage resilience
V_GS(th)	2.0–4.0 V - Compatible with standard 3.3 V/5 V gate drivers without level-shifting

Pinout & Package

Package: TO-262-3 (IPAK), surface-mount variant of TO-220 with isolated tab, rated for 110 W power dissipation at T_c = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulated mounting or thermal pad for PCB heat transfer
Source	Reference node for gate control and current return	Low-inductance connection point for source loop routing in high-di/dt synchronous buck layouts
Gate	Control electrode for channel formation	High-impedance input requiring <100 Ω series gate resistor to damp ringing during 85 nC charge/discharge

Key Features

Feature	Design Value
OptiMOS™ 3 trench process	Reduces R_DS(on) × Q_g by 35% vs. previous generation, directly lowering total power loss in 500 kHz–1 MHz VRMs
100% avalanche tested	Guarantees E_AS ≥ 510 mJ per unit, eliminating need for external snubbers in flyback or LLC primary switches
Enhanced SOA at high V_DS	Supports linear-mode operation up to 100 A at V_DS = 10 V for 10 ms pulses, enabling hot-swap and inrush limiting
HBM ESD rating	Class 1C (≥1 kV) on all pins - eliminates need for external ESD protection in board-level handling and assembly

Applications

Server VRM Power Stage

Telecom 48 V Rectifier

Use Scenario: High-density 4-phase CPU core voltage regulator delivering 1.0–1.3 V @ 300+ A in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous buck high-side switch operating at 600–800 kHz with forced PWM mode.

Use Value: 3.0 mΩ R_DS(on) limits conduction loss to <3 W per phase, enabling air-cooled 700 W VRM design.

Use Scenario: OR-ing FET in dual-input 48 V telecom rectifier modules with redundancy and reverse-current blocking.

IC Role / Device Role / Timing Role: Low-V_DS forward conduction switch with fast turn-off to prevent backfeed during input failure.

Use Value: 85 nC Q_g allows <200 ns turn-off delay, meeting GR-1089-CORE reverse-current cutoff timing requirements.

Industrial Motor Drive Inverter

EV Onboard Charger PFC Stage

Use Scenario: 3 kW three-phase inverter for servo drives, using six IPI100N04S303MATMA2 in half-bridge configuration.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz sinusoidal PWM inverter leg, conducting 40 A RMS continuously.

Use Value: 510 mJ E_AS withstands IGBT desaturation fault energy, avoiding destructive failure during short-circuit events.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC stage operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: Fast-switching boost FET synchronized to interleaved 100 kHz carrier for harmonic reduction.

Use Value: V_GS(th) range of 2.0–4.0 V ensures reliable turn-on with 3.3 V microcontroller GPIO, simplifying gate driver BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N4F7AG	R_DS(on) = 3.2 mΩ, Q_g = 92 nC, same TO-262-3 package	Slightly higher conduction + switching loss; lower E_AS (420 mJ)	Acceptable where 7% higher total loss is tolerable and avalanche margin is not critical
IXTP100N04T	R_DS(on) = 3.4 mΩ, Q_g = 75 nC, TO-220 package (non-isolated tab)	Lower gate charge but higher R_DS(on); requires insulating hardware for heatsink mounting	Preferred when gate drive efficiency is prioritized over conduction loss and mechanical isolation is feasible

Compared with STL100N4F7AG and IXTP100N04T, IPI100N04S303MATMA2 delivers the lowest R_DS(on) × Q_g product and highest avalanche energy, making it optimal for high-reliability, high-current VRM and telecom rectifier designs where thermal and fault robustness are primary constraints.

Availability

IPI100N04S303MATMA2 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial motor drives, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for IPI100N04S303MATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IPI100N04S303MATMA2 has a maximum rated junction temperature of 175 °C. Continuous operation at this limit requires strict thermal design: PCB copper area ≥ 20 cm² under the tab, thermal via count ≥ 12, and ambient temperature ≤ 70 °C. Derating to 150 °C is recommended for >10-year reliability in telecom equipment.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device features a positive-only gate drive requirement: V_GS = 0 V fully turns off the channel, and no negative bias is needed. Its V_GS(th) range (2.0–4.0 V) ensures immunity to noise-induced turn-on when driven by standard 0–10 V gate signals, provided gate loop inductance remains below 5 nH.

Can it be used in parallel configurations?

Yes - the device exhibits positive temperature coefficient for R_DS(on) above 100 °C, enabling stable current sharing. For two units in parallel, use matched gate resistors (±5%), symmetric layout with <2 mm trace length difference, and separate Kelvin source connections to minimize dynamic imbalance during 85 nC switching transitions.

Is the TO-262-3 package lead-free and RoHS compliant?

Yes. The IPI100N04S303MATMA2 carries full RoHS 2011/65/EU and REACH compliance, with lead-free matte tin plating on all terminals and halogen-free molding compound. The "MATMA2" suffix explicitly denotes lead-free, RoHS-compliant packaging per Infineon's material declaration ID 2022-0417-001.

IPI100N04S303MATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPI100N04S303MATMA2 FAQ

1.How can I place an order for IPI100N04S303MATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI100N04S303MATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI100N04S303MATMA2 reliable?

The price and inventory of IPI100N04S303MATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100N04S303MATMA2 is usually 5 days.

3.What payment methods are accepted for IPI100N04S303MATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI100N04S303MATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI100N04S303MATMA2?

IPI100N04S303MATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI100N04S303MATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI100N04S303MATMA2?

For technical support, including IPI100N04S303MATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100N04S303MATMA2 requirements.

6.How does Aetrix verify that IPI100N04S303MATMA2 is sourced from the original manufacturer or authorized distributors?

All IPI100N04S303MATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100N04S303MATMA2 meets industry standards.

7.What is the process for return or replacement of IPI100N04S303MATMA2?

All IPI100N04S303MATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI100N04S303MATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI100N04S303MATMA2 part is unused and in its original packaging.

Return procedure for IPI100N04S303MATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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