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Infineon Technologies IPI100N04S4H2AKSA1

Part No.:
IPI100N04S4H2AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI100N04S4H2AKSA1.pdf
Description:
MOSFET N-CH 40V 100A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,681

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Product details

Overview

IPI100N04S4H2AKSA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, rated for 40 V VDS, 2.4 mΩ max RDS(on) at 100 A/10 V, and 175 °C operation. It delivers high-current switching in automotive powertrain and body control modules with 100% avalanche testing and MSL1 reflow compatibility.

For engineers reviewing the IPI100N04S4H2AKSA1 datasheet, IPI100N04S4H2AKSA1 pinout, IPI100N04S4H2AKSA1 application, or IPI100N04S4H2AKSA1 equivalent, key selection criteria include RDS(on) at high temperature, single-pulse avalanche energy (280 mJ), gate charge profile (Qg = 70–90 nC), and thermal resistance (RthJC = 1.3 K/W).

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust drive with standard 5 V or 10 V logic-level controllers, while the 5.5 V gate plateau supports stable Miller region control during hard-switching.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 48 ns reverse recovery time under defined conditions (VR = 20 V, dI/dt = 100 A/µs), enabling efficient freewheeling in synchronous rectification and H-bridge motor drives without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load-dump transients.
RDS(on) max2.4 mΩ @ 100 A, 10 V - Enables <1 W conduction loss at 100 A, critical for high-efficiency DC-DC converters and starter solenoid drivers.
ID continuous100 A @ TC = 100 °C - Sustains full rated current in engine bay environments without derating below 100 °C case temperature.
EAS280 mJ @ ID = 50 A - Confirmed single-pulse avalanche capability ensures ruggedness against inductive switching faults in motor control.
Qg70–90 nC - Defines total gate drive energy required; enables fast turn-on/turn-off with moderate gate driver ICs (e.g., 1–2 A peak).
RthJC1.3 K/W - Junction-to-case thermal resistance allows direct heatsink mounting to maintain Tj ≤ 175 °C under 115 W dissipation.
tr/tf13 ns / 21 ns - Fast switching transitions reduce overlap losses in hard-switched topologies operating up to 100 kHz.

Pinout & Package

PG-TO262-3-1 is a surface-mount variant of TO-262 with isolated drain tab, designed for PCB-mounted heatsinking. The package features three terminals: Drain (tab), Source (pin 1), and Gate (pin 2); pin 3 is internally connected to Drain for mechanical stability and thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically and thermally connected to PCB copper pour; requires solder mask opening and thermal via array for optimal RthJA.
Source (Pin 1)Reference node for gate drive and current sensingLow-inductance connection point for Kelvin source routing in high-accuracy current monitoring applications.
Gate (Pin 2)Control input for channel conductionRequires <100 Ω series gate resistor to damp ringing; sensitive to ESD (±20 V rating).
Drain (Pin 3)Secondary drain connectionInternally bonded to tab; used for mechanical reinforcement and redundant thermal path-must be connected to same net as tab.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements (HTOL, TC, UHAST).
100% avalanche testedEach unit undergoes single-pulse avalanche stress at 50 A, ensuring field reliability in inductive load switching.
MSL1 ratingCompatible with lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity handling constraints.
Green product (RoHS)Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and JEDEC J-STD-020.
175 °C operationExtended junction temperature range supports placement near heat sources (e.g., exhaust manifolds, inverters) without derating.

Applications

Automotive Starter Solenoid Driver12 V DC-DC Converter Primary Switch

Use Scenario: High-current engagement of starter motor solenoid in stop-start systems with frequent cycling and vibration exposure.

IC Role / Device Role / Timing Role: Main power switch controlling 100 A solenoid coil; operates in on/off mode with <10 ms duty cycle.

Use Value: Low RDS(on) minimizes voltage drop during cranking; avalanche rating absorbs coil flyback energy without snubber.

Use Scenario: Primary-side synchronous rectifier in 12 V–48 V bidirectional DC-DC converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: High-side switching element in phase-shifted full-bridge topology operating at 50–100 kHz.

Use Value: Fast tr/tf and low Qg reduce switching losses; 175 °C rating accommodates elevated ambient temperatures near engine bay.

Electric Power Steering (EPS) Motor Phase LegBody Control Module (BCM) Load Driver

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor with torque ripple <5 %.

IC Role / Device Role / Timing Role: Low-side switch in PWM-driven inverter; conducts 70–90 A RMS with 20 kHz carrier frequency.

Use Value: Tight VGS(th) distribution (2.0–4.0 V) ensures consistent turn-on timing across temperature; low Coss improves light-load efficiency.

Use Scenario: High-current load driver for HVAC blower, headlamp leveling, or seat heater in centralized BCM architecture.

IC Role / Device Role / Timing Role: Single-ended switch controlling resistive or inductive loads up to 100 A with diagnostic feedback.

Use Value: Integrated body diode eliminates need for external freewheeling diode; RoHS/Green compliance meets OEM sustainability mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100N04S4H2Same die, PG-TO263-3-2 package with exposed drain pad; RthJC = 1.3 K/W identical but higher RthJA on minimal footprint (62 K/W vs. 40 K/W with 6 cm² copper).Better suited for compact, double-sided PCBs where top-side heatsinking is impractical.Select when board space is constrained and thermal interface to bottom-side heatsink is preferred.
IPP100N04S4H2Same die, PG-TO220-3-1 through-hole package; identical electrical specs but higher RthJC (1.5 K/W) and no MSL1 rating.Targeted at legacy industrial designs requiring wave-solder compatibility and manual repairability.Choose only for non-automotive, non-reflow production environments where cost and serviceability outweigh thermal performance.

Compared with IPB100N04S4H2 and IPP100N04S4H2, IPI100N04S4H2AKSA1 offers optimal balance of surface-mount manufacturability, MSL1 reflow support, and thermal performance in automotive-grade SMD packages-making it the default choice for new 12 V powertrain designs requiring AEC-Q101 compliance.

Availability

IPI100N04S4H2AKSA1 is available at Aetrix Electronics and suitable for automotive powertrain control, 12 V–48 V DC-DC conversion, and electric power steering systems requiring stable component supply and long-term lifecycle assurance.

Supply support for IPI100N04S4H2AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS®-T2 family, engineered specifically for high-current, high-reliability 12 V automotive power switching-emphasizing low RDS(on), rugged avalanche behavior, and AEC-Q101 qualification.

FAQ

What is the maximum allowable gate-source voltage for IPI100N04S4H2AKSA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement and kept below 15 V to avoid accelerated aging under repeated stress.

Does IPI100N04S4H2AKSA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dV/dt and suppress oscillation. Based on gate charge (70–90 nC) and typical driver output impedance, a 4.7 Ω to 10 Ω resistor is recommended for 100 kHz switching in automotive environments. Lower values improve switching speed but increase EMI risk; higher values reduce ringing at the cost of increased switching losses.

Can IPI100N04S4H2AKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (increasing with junction temperature) enables inherently stable current sharing. Parallel operation requires matched layout (symmetrical trace lengths, shared heatsink), Kelvin source connections, and individual gate resistors to ensure simultaneous turn-on. Derating to 80 % of total rated current per device is advised for thermal margin.

Is the body diode in IPI100N04S4H2AKSA1 suitable for reverse recovery in hard-switched topologies?

The body diode has a measured trr of 48 ns and Qrr of 54 nC under standardized conditions (VR = 20 V, IF = 50 A, dI/dt = 100 A/µs), making it usable in synchronous rectification and freewheeling-but not recommended for high-frequency ZVS or resonant circuits where ultra-fast recovery is mandatory. External Schottky diodes remain preferable above 200 kHz.

IPI100N04S4H2AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7180 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
115W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI100N04S4H2AKSA1 FAQ

1.How can I place an order for IPI100N04S4H2AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI100N04S4H2AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI100N04S4H2AKSA1 reliable?

The price and inventory of IPI100N04S4H2AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100N04S4H2AKSA1 is usually 5 days.

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IPI100N04S4H2AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI100N04S4H2AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI100N04S4H2AKSA1?

For technical support, including IPI100N04S4H2AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100N04S4H2AKSA1 requirements.

6.How does Aetrix verify that IPI100N04S4H2AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI100N04S4H2AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100N04S4H2AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI100N04S4H2AKSA1?

All IPI100N04S4H2AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI100N04S4H2AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI100N04S4H2AKSA1 part is unused and in its original packaging.

Return procedure for IPI100N04S4H2AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI100N04S4H2AKSA1 Tags

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