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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI100N06S3L04XK

Name: IPI100N06S3L04XK
Brand: Infineon Technologies
SKU: IPI100N06S3L04XK
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI100N06S3L04XK

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI100N06S3L04XK.pdf

Description:: MOSFET N-CH 55V 100A TO262-3

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Product details

Overview

IPI100N06S3L04XK from Infineon Technologies is a 55 V, 100 A N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, qualified to AEC-Q101 for automotive use, with 3.5 mΩ max R_DS(on) at V_GS = 10 V and 100% single-pulse avalanche tested to 1090 mJ. It operates up to 175 °C and supports high-current motor drive and DC-DC converter primary-side switching.

For engineers reviewing the IPI100N06S3L04XK datasheet, IPI100N06S3L04XK pinout, IPI100N06S3L04XK application, or IPI100N06S3L04XK equivalent, key selection criteria include its 0.7 K/W junction-to-case thermal resistance, 241–362 nC total gate charge, 17270 pF input capacitance, and integrated body diode with 95 ns reverse recovery time.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V and 5 V logic-level drive compatibility while maintaining noise immunity.

The MOSFET features a fully characterized reverse diode with 0.6–1.3 V forward voltage at 80 A and 135 nC reverse recovery charge, enabling efficient synchronous rectification and freewheeling in buck converters and H-bridge motor controllers without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; defines safe operation in 48 V automotive and industrial bus systems.
R_DS(on) max	3.5 mΩ @ V_GS = 10 V - Enables ≤3.5 W conduction loss at 100 A, critical for thermally constrained high-power modules.
I_D continuous	100 A @ T_C = 100 °C - Sustains full rated current under sustained high-temperature chassis mounting conditions.
E_AS	1090 mJ - Confirmed single-pulse avalanche energy rating ensures reliable operation during inductive load turn-off transients.
Q_g	241–362 nC - Defines gate driver power requirement and switching speed trade-off in 100 kHz–500 kHz SMPS designs.
t_r/t_f	58 ns / 55 ns - Fast edge rates reduce switching transition time, lowering overlap losses in hard-switched converters.
R_thJC	0.7 K/W - Enables direct heatsink mounting with predictable thermal path; supports >170 W dissipation at ΔT = 120 K.

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, insulated tab), TO-262 variant with exposed drain pad on underside for thermal transfer. Compatible with standard TO-220 footprint but with improved thermal performance over IPP100N06S3L-04.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven via series resistor to control dV/dt and ringing.
Pin 3 (Drain)	Power output	Exposed metal tab connected internally to drain; must be electrically isolated and thermally coupled to heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control units and EPS modules.
175 °C operating temperature	Enables placement near heat sources (e.g., inverters, battery packs) without derating in under-hood environments.
100% avalanche tested	Guarantees ruggedness against inductive kickback in motor drives and solenoid control without external snubbers.
Green product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and automotive ELV requirements.
OptiMOS™-T2 trench architecture	Delivers 20% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 100–300 kHz converters.

Applications

Automotive Engine Control Unit (ECU)

Industrial DC-DC Converter

Use Scenario: High-side switching of fuel injectors and ignition coils in 12 V/48 V hybrid architectures.

IC Role / Device Role / Timing Role: Power switch controlling inductive loads with precise 1–10 ms pulse width modulation.

Use Value: 1090 mJ avalanche rating eliminates need for external clamping diodes, reducing BOM count and PCB area.

Use Scenario: Primary-side switch in isolated 1 kW telecom or server PSU half-bridge topology.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element handling 80–100 A peak drain current at 200 kHz.

Use Value: 3.5 mΩ R_DS(on) and 0.7 K/W R_thJC enable >97% efficiency at full load with passive heatsinking.

Electric Power Steering (EPS)

Onboard Charger (OBC) Inverter Stage

Use Scenario: Three-phase inverter bridge driving 400 V BLDC assist motor in compact steering column module.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled H-bridge with bidirectional current sensing.

Use Value: Integrated body diode with 95 ns t_rr and 135 nC Q_rr minimizes freewheeling losses and EMI during regeneration.

Use Scenario: Bidirectional AC/DC and DC/AC conversion stage in 6.6 kW EV onboard charger.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in dual-active-bridge topology.

Use Value: AEC-Q101 qualification and 175 °C operation ensure reliability across vehicle lifecycle under thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S3L-04	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W vs. 40 K/W on PCB) and no insulated tab.	Suitable for lower-power (<600 W), cost-sensitive industrial SMPS where heatsink access is unrestricted.	Select when mechanical mounting constraints favor TO-220 and thermal budget allows ≥2× larger heatsink.
IPB100N06S3L-04	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on), 0.7 K/W R_thJC, but requires reflow-compatible layout.	Targeted at automated SMT production for automotive ADAS ECUs and compact power modules.	Choose for volume production with pick-and-place assembly and board-level thermal management via copper pour.

Compared with IPP100N06S3L-04 and IPB100N06S3L-04, the IPI100N06S3L04XK offers identical electrical performance in a through-hole PG-TO262 package with insulated drain tab-ideal for retrofit, prototyping, and chassis-mounted high-reliability applications where manual assembly and thermal isolation are prioritized.

Availability

IPI100N06S3L04XK is available at Aetrix Electronics and suitable for automotive engine control units, industrial DC-DC converters, electric power steering systems, and onboard charger inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for IPI100N06S3L04XK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum gate-source voltage rating for IPI100N06S3L04XK?

The absolute maximum gate-source voltage is ±16 V, with qualification testing performed at –5 V and +16 V per datasheet Rev. 1.1. Exceeding this range risks permanent gate oxide damage. For robust operation, gate drive should be clamped to ≤12 V with a Zener or active circuit, especially in noisy automotive environments.

Does IPI100N06S3L04XK include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic fast-recovery body diode rated for 100 A continuous forward current and 400 A pulsed current. Key specs include V_SD = 0.6–1.3 V at 80 A/25 °C, t_rr = 95 ns, and Q_rr = 135 nC, enabling efficient freewheeling in H-bridge and synchronous rectifier configurations without external diodes.

How does the PG-TO262-3-1 package differ from TO-220 in thermal performance?

The PG-TO262-3-1 has an insulated drain tab and identical R_thJC (0.7 K/W) to the TO-263 variant, unlike TO-220 which lacks insulation and exhibits higher thermal resistance in chassis-mounted setups. This allows direct heatsink mounting without isolating hardware while maintaining electrical safety in high-voltage systems.

Is IPI100N06S3L04XK suitable for use in life-support medical devices?

No-Infineon explicitly restricts use in life-support devices unless expressly approved in writing. The device is qualified for automotive and industrial applications only; its failure mode characterization and reliability testing do not meet ISO 13485 or IEC 62304 requirements for implantable or critical-care medical equipment.

IPI100N06S3L04XK Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 362 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 17270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI100N06S3L04XK FAQ

1.How can I place an order for IPI100N06S3L04XK through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI100N06S3L04XK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI100N06S3L04XK reliable?

The price and inventory of IPI100N06S3L04XK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100N06S3L04XK is usually 5 days.

3.What payment methods are accepted for IPI100N06S3L04XK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI100N06S3L04XK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI100N06S3L04XK?

IPI100N06S3L04XK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI100N06S3L04XK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI100N06S3L04XK?

For technical support, including IPI100N06S3L04XK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100N06S3L04XK requirements.

6.How does Aetrix verify that IPI100N06S3L04XK is sourced from the original manufacturer or authorized distributors?

All IPI100N06S3L04XK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100N06S3L04XK meets industry standards.

7.What is the process for return or replacement of IPI100N06S3L04XK?

All IPI100N06S3L04XK units undergo pre-shipment inspection (PSI). If there is an issue with IPI100N06S3L04XK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI100N06S3L04XK part is unused and in its original packaging.

Return procedure for IPI100N06S3L04XK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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